• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.184-189
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• 2013

$Ba_2SiO_4:Eu^{2+}$ ($B_2S:Eu^{2+}$) powders were prepared by firing the dry gel obtained by the sol-gel and the hybrid process (sol-gel and combustion), respectively, and their structure and luminescence were investigated. Tetraethyl orthosilicate (TEOS) was used as a Si source. The phase transition was observed with the TEOS content. With 1.2M TEOS, the powders prepared by the sol-gel process without prior calcination were composed of the $B_2S:Eu^{2+}$ single phase, whereas those by the sol-gel and the hybrid process with prior calcination consisted of the dominant $B_2S:Eu^{2+}$ and minor $BaSiO_3:Eu^{2+}$ ($BS:Eu^{2+}$) phases and their emission intensities were approximately two times higher than those without prior calcination. The hybrid process could reduce the process time innovatively compared to the sol-gel process, even though the former was a little inferior to the latter in the emission intensity of $B_2S:Eu^{2+}$. With 1.1M TEOS, the $B_2S:Eu^{2+}$ single phase was obtained by the hybrid process, and its green emission was observed at 505 nm originated from the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ions.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.677-681
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• 1989

On the preparation of silica glass by sol-gel process, we used fine powder of silica gel to prevent cracking. In this case, the best condition of silica glass preparation is the contents of 10~40wt% seed and the gelation time of solution in contract. The dried gels conversed to silica glass by heat treatment up to 125$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.488-494
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• 1991

In this study, the effects of catalyst and DCCA content were investigated in order to determine the optimum conditions of monolithic silica gel formation through sol-gel process. Formamide, oxalic acid, glycerol and dimethylformamide are used as DCCA. To observe the phenomena in drying and heat-treating of gels, we examined structural exchange of gels using FT-IR, TG-DTA and XRD. Monolithic gels were obtained by adding formamide and dimethylformamide as DCCA. According to the heat treatment schedule, silica glass is prepared by heat-treatment up to 1050$^{\circ}C$.

• Current Photovoltaic Research
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• v.7 no.2
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• pp.29-32
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• 2019

Large band gap attenuation of CdS nanoclusters in hybrid sol gel matrix comprised of 3-(trimethoxysilyl)propyl methacrylate (TMSPM), 15 wt. % zirconium, and various amounts of cadmium acetate was observed after $H_2S$ exposure. Hybrid sol gel matrixes were prepared by hydrolysis and condensation reactions. The sol gels contained with various amount of cadmium acetate were spin coated to glass substrates and exposed to $H_2S$ gas. The UV-visible absorption peaks were shifted toward blue with increasing the amount of CdS nanoclusters and were shifted to the red after thermal process. Significant amount of -OH absorption peaks were reduced after thermal process. Strong room temperature photoluminescence (PL) of CdS nanoclusters was observed after exposing to $H_2S$ gas. The PL intensity increased for several minutes and slowly decreased thereafter. The luminescence peaks were continuously shifted toward blue as the time passed. Extraordinary Stokes shift (approximately 160 nm) was observed.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.366-373
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• 2015

Sol-gel binder was prepared by hydrolysis and condensation reaction using boehmite sol and methyltrimethoxysilane as a function of aging-time. The coating slurry was composed of a plate-shape alumina in the sol-gel binder for the EPD process, in which particles dispersed in the slurry were deposited on the electrode under an electric field due to the surface charge. We studied the effects of three parameters: the content of boehmite, the aging time, and the applied voltage, on the physical, thermal, and electrical properties of the hybrid composite films by EPD. The amount of boehmite was 10 ~ 20 wt% and the aging time was 0.5 ~ 72, with a fixed amount of plate-shape alumina of 10 wt%. The condition of applied voltage was 5 ~ 30 V with a distance of 2 cm between the electrode during the EPD process. We confirmed that a structure of hybrid composite films of well-ordered plate alumina was deposited on the substrate when the film was prepared using a sol-gel binder composed of 15 wt% boehmite with 1 hr aging time and EPD at 10 V. The process shows a weight loss of 7% at $500^{\circ}C$ in TGA and a breakdown voltage of 8 kV at $87{\mu}m$.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1310-1314
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• 2011

Sodium beta-alumina (SBA) nano-powders were synthesized by the citrate sol-gel process, and the effects of the cationic surfactant n-cetyltrimethylammonium bromide surfactant (CTAB) were investigated. The structure and morphology of the nano-powders were characterized by X-ray diffraction (XRD) and transmission electron microscope (TEM) techniques, respectively. The effects of CTAB on the citrate sol-gel process and the SBA formation were investigated by thermo gravimetric/differential thermal analysis (TG/DTA) and Fourier transform infrared spectroscopy (FTIR). The conductivity of ceramic pellets of SBA was measured by electrochemical impedance spectroscopy (EIS). The results showed that the CTAB inhibited the agglomeration of SBA powders effectively and consequently decreased the crystallization temperature of SBA, about $150^{\circ}C$ lower than that of the sample without CTAB. The measured conductivity of SBA was $1.21{\times}10^{-2}S{\cdot}cm^{-1}$ at $300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.679-684
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• 2009

Phosphors of $Eu^{2+}$ doped alkaline earth aluminates MA$l_2O_4:Eu^{2+}$ (M=Sr, Ba, Ca) have been prepared by sol-gel process and their characterization of photoluminescence and photocurrent properties have been performed. The phosphors prepared by sol-gel process, due to its advantage of better homogeneity and low synthetic temperature, was synthesized as single phases at lower temperature than the solid-state process; $800{\sim}1000{^{\circ}C}$ for 6 h under mild reduction atmosphere (Ar- 3% $H_2$). It was confirmed that SrA$l_2O_4:Eu^{2+}$ composition revealed the most excellent properties in the brightness and photocurrent.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.794-798
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• 2001

$Y_{2-x}SiO_5:Ce_x^{3+}$(x=0.002∼0.04) phosphors were prepared by sol-gel process, amorphous crystal phase was observed in calcining dry gel at 800$^{\circ}$C, but pure $X_2$ type of type $Y_2SiO_5$ phase appeared from heat treatment above 1000$^{\circ}$C. Light absorption of tye $Y_2SiO_5$ host lattice occurred at 230∼360nm, and light absorption of the $Y_{2-x}SiO_5:Ce_x^{3+}$ phosphors was observed at 300∼400nm in adding $Ce^{3+}$. $Y_{2-x}SiO_5:Ce_x^{3+}$ phosphors showed maximum emission shoulder at 436nm. Maximum CL intensities of $Y_{2-x}SiO_5:Ce_x^{3+}$ were observed in adding 0.025 $Ce^{3+}$ and the phosphor showed x=0.161, y=0.124 in color coordinate of CIE1931.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.