• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.155-159
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• 2003

The preparation and luminescence characterization of yttrium oxide doped with trivalent europium phosphors by sol-gel method have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation one of appled various chelating agents. we noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for 1hrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence characterization of resultant $Y_{2}O_{3}:Eu^{3+}$ phosphor was enhanced upto maximum 30% significantly than conventional method through increasing porous region and decreasing particle sizes.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.102-105
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• 2009

$Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode materials have been synthesized by a microwave-assisted sol-gel method. The structure and electrochemical properties of $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ were studied by X-ray difftactometry (XRD), scanning electron microscopy (SEM) and charge-discharge cycler. The powder prepared by microwave assisted sol-gel method showed good crystallinity and well-defined facet shapes. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ electrode delivered a high discharge capacity of 230 $mAhg^{-1}$ at the specific current of 40 $mAg^{-1}$ (0.2 C rate) in the voltage range of 2.0${\sim}$4.8 V. About 60 % of the discharge capacity measured at 0.2 Crate (140 $mAhg^{-1}$) was maintained at a 6 C (1200 $mAg^{-1}$)rate. The cyclic property was also stable and it did not deteriorated at a high Crate.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.1943-1949
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• 2024

This study focuses on the comparative analysis of ABS polymer samples produced using two distinct manufacturing techniques: 3D printing and the sol-gel methods. In the first approach, ABS polymer was augmented with rare earth oxides, Er₂O₃ and Gd₂O₃, in nano powder form and fabricated into test specimens using 3D printing technology. In the second approach, identical samples were prepared via the sol-gel technique involving mold-based fabrication. Elemental content analysis revealed no significant differences between the samples produced by the two methods. The study proceeds to evaluate the gamma-ray shielding, neutron shielding, temperature resistance, and SEM/EDS pictures of ABS samples generated through both techniques. 3D printing method exhibited more favorable results in terms of structure morphology and thermal stability while there is no significant difference for radiation shielding. The results provide insights into the performance and suitability of each production method for radiation shielding applications. This research not only contributes to enhancing radiation shielding technology but also informs the selection of the most appropriate fabrication method for specific applications in nuclear technologies and diagnostic energy range in medical purposes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.245-246
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• 2006

A propyl alcohol based sol-gel method was used as to replace the 2-methoxyethanol with 1,1,1 tris (hydroxymethyl) ethane for preparation of pzt piezoelectric ceramic. The powder obtained by this sol-gel process were calcined at $900^{\circ}C$ and followed by the sintering at $1100^{\circ}C$ for ca2 hrs as to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology were determined by high resolution scanning electronmicroscopy. Further, the prepared small sized pzt thin powders are likely to be used m various applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.