• Title/Summary/Keyword: Sol stability

Search Result 221, Processing Time 0.024 seconds

Effect of Nickel Nitrate Doping on β-type PVDF Layers Prepared by Electrostatic Spray Deposition (정전 분무법으로 제조한 β-형 PVDF 막에 미치는 니켈 질산염 첨가의 영향)

  • Hwang, Kyu-Seog;Kim, Myung-Yoon;Son, Byeongrae;Hwang-Bo, Seung;No, Hyeonggap
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.67 no.10
    • /
    • pp.1317-1321
    • /
    • 2018
  • PVDF as a semicrystal polymer, having a structure with C-F dipole moments, has been widely investigated because of its excellent chemical stability, mechanical strength, and ferroelectricity. In this study, ferroelectic ${\beta}$ type - PVDF layer was prepared by using an electrostatic spray deposition method and the effects of the addition of Ni-nitrate in precursor solution on the properties of PVDF layer were evaluated. Crystallinity and chemical structure of the PVDF layer were analyzed by a X-ray diffraction and Fourier Transform Infrared Spectrophotometer. Surface structure and fractured cross section of the layer were examined by a field emission-scanning electron microscope. LCR meter was used to obtain the dielectric properties of the layer. As the addition of an inorganic metal salt in PVDF sol, ${\beta}$ type - PVDF crystals were appeared in the hydrated metal salts doped-layer since the strong hydrogen bondings $(O-H{\cdots}F-C)_n$ due to high polarity of OH- were formed.

The Weathering Resistance of Sol-Gel Derived Anti-Reflective SiO2-Tio2 Thin Films (졸-겔법에 의한 SiO2-Tio2계 박막의 내후성)

  • Kim, Sangmoon;Lim, Yongmu;Hwang, Kyuseog
    • Journal of Korean Ophthalmic Optics Society
    • /
    • v.3 no.1
    • /
    • pp.237-242
    • /
    • 1998
  • A transparent and colorless $80SiO_2-20TiO_2$(mol%) thin films on soda-lime-silica slide glass and sapphire substrate were obtained by spin-coating technique using tetraethyl orthosilicate and titanium trichloride as starting materials. The prepared film annealed at $750^{\circ}C$ showed a high transmittance and a low reflectance. For the $SiO_2-TiO_2$ films on slide glasses, a strong interaction between the sodium ion and oxygens is properbly the origin of the good stability to the high temperature and the high humidity.

  • PDF

A New Shuttle Plasmid That Stably Replicates in Clostridium acetobutylicum

  • Lee, Sang-Hyun;Kwon, Min-A;Choi, Sunhwa;Kim, Sooah;Kim, Jungyeon;Shin, Yong-An;Kim, Kyoung Heon
    • Journal of Microbiology and Biotechnology
    • /
    • v.25 no.10
    • /
    • pp.1702-1708
    • /
    • 2015
  • We have developed a new shuttle plasmid, designated as pLK1-MCS that can replicate in both Clostridium acetobutylicum and Escherichia coli, by combining the pUB110 and pUC19 plasmids. Plasmid pLK1-MCS replicated more stably than previously reported plasmids containing either the pIM13 or the pAMβ1 replicon in the absence of antibiotic selective pressure. The transfer frequency of pLK1-MCS into C. acetobutylicum was similar to the transfer frequency of other shuttle plasmids. We complemented C. acetobutylicum ML1 (that does not produce solvents such as acetone, butanol, and ethanol owing to loss of the megaplasmid pSOL1 harboring the adhE1-ctfAB-adc operon) by introducing pLK1-MCS carrying the adhE1-ctfAB-adc operon into C. acetobutylicum ML1. The transformed cells were able to resume anaerobic solvent production, indicating that the new shuttle plasmid has the potential for practical use in microbial biotechnology.

One-step liquid-phase fabrication of adhesive and protective inorganic layer for carbon nanotube field emitters

  • Jeong, Hae-Deuk;Kim, Ho-Young;Jeong, Hee-Jin;Jeong, Seung-Yol;Han, Joong-Tark;Lee, Geon-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.03b
    • /
    • pp.43-43
    • /
    • 2010
  • we have investigated the field emission characteristics of the CNT/TEOS hybrid thin films fabricated by a spray method. It is found that the CNT/TEOS hybrid emitters show high current density, low turn on field, and long-term emission stability compared to the CNT emitters. These efficient field emission characteristics of the CNT/TEOS hybrid emitters are attributed to the TEOS sol, acting as a protection layer of nanotube emitter by surrounding the nanotube tip as well as a binder material to enhance the adhesion of nanotube emitters to the substrate. Therefore, the CNT/TEOS hybrid emitters could be utilized as an alternative for the efficient and reliable field emitters.

  • PDF

Carbon nanotube / silane hybride film for highly efficient field emitter

  • Jeong, Hae-Deuk;Kim, Ho-Young;Jeong, Hee-Jin;Han, Joong-Tark;Lee, Geon-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.181-181
    • /
    • 2010
  • Few-walled carbon nanotubes (FWNTs)-based field emitters with long term stability are fabricated by using a spray method. Tetraethylorthosilicate (TEOS) sol as a binder was mixed with dispersed solution of FWNTs to enhance the adhesion of FWNTs on the cathode substrate. Due to the strong intermolecular interaction of TEOS to the functional groups attached on CNTs and substrate, CNTs are tightly adhered to the cathode electrode when heat treatment is performed at $150^{\circ}C$ for 1 hour, resulting in a stable electron emission of CNT emitters for long time. Excellent field emission characteristics were exhibited, with a large field enhancement factor and low turn-on voltage, comparable to those of CNT emitters fabricated by a screen printing of CNT paste. Therefore, FWNTs / TEOS hybrid films could be utilized as an alternative for the efficient and reliable field emitters.

  • PDF

Crystal Chemistry and Dielectric Properties of $Bi_4Ti_3O_{12}$ by the Substitution of Rare Earth Elements (Y, Nd, Sm, Gd) (희토류원소(Y, Nd, Sm, Gd)의 치환에 의한 $Bi_4Ti_3O_{12}$의 결정화학 및 유전물성)

  • 고태경;방규석
    • Journal of the Korean Ceramic Society
    • /
    • v.32 no.10
    • /
    • pp.1178-1188
    • /
    • 1995
  • Bi4Ti3O12 (BIT) and its rare earth (Y, Nd, Sm, Gd)-substituted derivatives were synthesized using a sol-gel method to investigate their microstructures, cystal structures and electrical properties depending on the subsituted elemetns. Nd- or Sm-substitution into BIT appeared to be favorable, while Y- or Gd-substitution occurred with a pyrochlore phase. This suggests that a smaller trivalent rare earth ion may not be favorable in the structure of BIT. The rare earth derivatives showed that their particle sizes and shapes were considerably different depending on the kinds of substituted elements. Y-substitution resulted in developing a relatively even particle size and a dense microstructure. In structure, they may be similar to the pseudo-orthorhombic BIT but close to a paraelectric tetragonal phase. Their a (or b) axes were shortened, compared to the one of BIT. Such a distortion may result a decrease in the tilting of TiO6. BIT and the derivatives showed that their dielectric constants and losses were 40~120 and less than 0.03, respectively in the frequency range of 1~10 MHz. The dielectric loss of Y-substituted derivative was the lowest one and changed a little to frequency. Curie points were observed in all the derivatives like BIT to suggest that they would be ferroelectric. The temperature stability of the delectric properties of the derivatives below the Curie points were relatively better than the one of BIT.

  • PDF

Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time (IZO 박막 트랜지스터의 UV를 이용한 후열처리 조사 시간에 따른 전기적 특성 평가)

  • Lee, Jae-Yun;Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.33 no.2
    • /
    • pp.93-98
    • /
    • 2020
  • We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

The Preparation and Electrical Characteristics of BST Thin Film by Spin-Coating Method (회전코팅법을 이용한 BST 박막의 제조 및 전기적 특성에 관한 연구)

  • Ki, Hyun-Chul;Kim, Duck-Keun;Lee, Seung-Woo;Hong, Kyung-Jin;Lee, Jin;Kim, Tae-Sung
    • Proceedings of the KIEE Conference
    • /
    • 1999.11d
    • /
    • pp.918-920
    • /
    • 1999
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

  • PDF

A Study on the Optimal Setting Method of Directional Overcurrent Relay Considering Fault Ride Through of Distributed Generation (분산전원의 Fault Ride Through를 고려한 방향성 과전류 계전기 최적 정정법에 관한 연구)

  • Song, Jin-Sol;Cho, Gyu-Jung;Kim, Ji-Soo;Shin, Jea-Yun;Kim, Dong-Hyun;Kim, Chul-Hwan
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.67 no.8
    • /
    • pp.1002-1008
    • /
    • 2018
  • Fault Ride Through(FRT) requirement prevents disconnections of distributed generations during the specific time on disturbance condition for system stability. However, since there is a limitation to the FRT capability of distributed generation, and the protection system needs to clear the fault quickly before the distributed generation is disconnected. Therefore, this paper proposes a novel optimal setting method of directional overcurrent relay considering FRT of distributed generation. The proposed method reduces the probability of disconnections of the distributed generation in disturbance without additional equipment considering the FRT capability of the distributed generation by calculating the optimal relay setting through the Genetic Algorithm(GA).

Robust H Disturbance Attenuation Control of Continuous-time Polynomial Fuzzy Systems (연속시간 다항식 퍼지 시스템을 위한 강인한 H 외란 감쇠 제어)

  • Jang, Yong Hoon;Kim, Han Sol;Joo, Young Hoon;Park, Jin Bae
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.22 no.6
    • /
    • pp.429-434
    • /
    • 2016
  • This paper introduces a stabilization condition for polynomial fuzzy systems that guarantees $H_{\infty}$ performance under the imperfect premise matching. An $H_{\infty}$ control of polynomial fuzzy systems attenuates the effect of external disturbance. Under the imperfect premise matching, a polynomial fuzzy model and controller do not share the same membership functions. Therefore, a polynomial fuzzy controller has an enhanced design flexibility and inherent robustness to handle parameter uncertainties. In this paper, the stabilization conditions are derived from the polynomial Lyapunov function and numerically solved by the sum-of-squares (SOS) method. A simulation example and comparison of the performance are provided to verify the stability analysis results and demonstrate the effectiveness of the proposed stabilization conditions.