• Title/Summary/Keyword: Sol formation

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Solid-State $^1H$ and $^{29}Si$ NMR Studies of Silicate and Borosilicate Gel to Glass Conversion

  • 양경화;우애자
    • Bulletin of the Korean Chemical Society
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    • v.17 no.8
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    • pp.696-699
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    • 1996
  • Silicate and borosilicate gels were prepared by the sol-gel process and thermally treated in the 150-850 ℃ temperature range. Solid-state 1H MAS and 29Si CP/MAS NMR spectroscopy were used to investigate the effects of heat treatments on the silicate gel to glass conversion process. The 1H NMR isotropic chemical shifts and the relative intensities of hydrogen bonded and isolated silanol groups have been used to access the information concerning the dehydration process on the silicate gel surface. The 29Si NMR isotropic chemical shifts affected by the local silicon environment have been used to determine the degree of crosslinking, i.e. the number of siloxane bonds. These NMR results suggest that the silicate gel to glass conversion process is occurred by two stages which are dependent on the temperature; (1) the formation of particles up to 450 ℃ and (2) the formation of large particles by aggregation of each separated single particle above 450 ℃. In addition, the effects of B atom on the formation of borosiloxane bonds in borosilicates have been discussed.

Structureal and dielectric properties of $(Pb_{x},Sr_{x-1})TiO_{3}$ thin film for tunable device application (Tunable 소자 응용을 위한 $(Pb_{x},Sr_{x-1})TiO_{3}$ 박막의 구조 및 유전특성)

  • Kim, Kyoung-Tae;Kim, Chang-Il;Lee, Sung-Gap
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.78-81
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    • 2002
  • Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

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Formation of ZnO ZnO thin films 3C-SiC buffer layer (3C-SiC 버퍼층위에 ZnO 박막 형성)

  • Lee, Yun-Myung;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.237-237
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    • 2009
  • Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

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Ferroelectric PLZT Thin Films Prepared by Sol-Gel Route (졸-겔법에 의한 PLZT 합성과 강유전성 박막 제조)

  • 오영제;김정기;주기태;현상훈;정형진
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.870-876
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    • 1992
  • Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

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Effects of seeding layers on electrical properties of PLZT thin films prepared by sol-gel method (Seeding층이 sol-gel법에 의한 PLZT 박막의 제조시 전기적 특성에 미치는 영향)

  • 이진홍;박병욱
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.2
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    • pp.140-144
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    • 2000
  • ($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.

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The Structural properties of BSCT thick films fabricated by screen-printing method (Screen-printing법으로 제작한 BSCT 후막의 구조적 특성)

  • Heo, Young-Sik;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.545-548
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    • 2002
  • $(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(BSCT) (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ratio were studied. As a result of the differential thermal analysis (DTA), exothermic perk was observed at around $860^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The BSCT thick films sintered at $1350^{\circ}C$ for 2h showed the average grain size of $2{\sim}7{\mu}m$. The average thickness of BSCT thick films, obtained by 3 times of screen-printing, was approximately $85{\mu}m$.

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Variation of Photoluminescence in Zirconia Gel by Pyrolysis (지르코니아 겔에서 열처리에 따른 광발광의 변화)

  • Han, Kyu-Suk;Ko, Tae-Gyung
    • Journal of the Korean Ceramic Society
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    • v.45 no.2
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    • pp.126-131
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    • 2008
  • In this study, we prepared zirconia gel by the sol-gel method and investigated its photoluminescence properties by varying pyrolysis temperature. The addition of acetic acid into a Zr-alkoxide solution resulted in forming the bidentate ligands with Zr ions and producing a stable gel. At the pyrolysis temperature of $350^{\circ}C$, the zirconia nanocrystals with tetragonal structure gradually appeared in the gel. The PL intensity of the zirconia gel increased with increasing the pyrolysis temperature up to $350^{\circ}C$, but decreased above the temperature. Concurrently, its PL peak wavelength continuously shifted from ${\sim}440\;nm$ to ${\sim}550\;nm$ with the temperature. The PL characteristics of the zirconia gels were closely associated with decomposition of residual organic groups, the formation of the zirconia nanocrystals, and the tetragonal to monoclinic phase transformation.

Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei;Oh, Tae-Sung;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.48-53
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    • 1996
  • Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

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Crystallization and Crack Formation in Sol-Gel PLZT Thin Films (졸-겔법에 의한 PLZT 박막의 결정화 및 균열 생성)

  • 안기철;이전국;김호기;노광수
    • Journal of the Korean Ceramic Society
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    • v.29 no.3
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    • pp.216-222
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    • 1992
  • PLZT thin films were prepared using sol-gel spin coating. The films mainly consisted of perovskite phase when heat treated at 600$^{\circ}C$ and in O2 or air atmosphere for 2 hours after 7 coating cycles. Cracks were formed when smaller than after 9 coating cycles. When ITO interlayer existed between Corning 7059 glass substrate and the film, cracks were not formed after 9 coating cycles, but cracks were formed after 11 coating cycles because of large volume change of the film contracting on the substrate during the heat treatment. In the observation of microstructure, the thin films have perovskite phase of about 2 $\mu\textrm{m}$ grain size and pyrochlore phase of 100∼200${\AA}$ grain size.

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Preparation of $Li_2O-ZrO_2-P_2O_5-SiO_2$ based Glassy Solid Electrolytes by Sol-Gel Process and Their Ionic Conduction (솔-젤법에 의한 $Li_2O-ZrO_2-P_2O_5-SiO_2$계 유리 고체전해질의 제조와 그의 이온전도성)

  • 박강석;김기원;강은태
    • Journal of the Korean Ceramic Society
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    • v.31 no.6
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    • pp.660-670
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    • 1994
  • Transparent, crack-free dried gel monoliths with a composition of LiZr1.5Si2P2O12.5 have been synthesized by the low temperature polymerization of the Sol-Gel technique using metal alkoxides as starting materials. After initial reaction (20~40 min), each metal alkoxide closely paralleled each other during the hydrolysis reactions. The safe drying conditions of gels with no creaks the control of the shrinkage rate. The gels converted into the glass by heat treatment at 75$0^{\circ}C$. FTIR data indicated that the gels were phase separated into silicarich and phosphate-rich regions with the lithium. XRD results showed the formation of crystalline LiH2PO4. The gels dried at 15$0^{\circ}C$ or fired at 75$0^{\circ}C$ contained the residual water. The high ionic conductivity at room temperature for these gels was attributed to the motion of protons.

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