• 제목/요약/키워드: Sol Characteristics

검색결과 716건 처리시간 0.027초

Microwave Dielectric Properties of $Mg_4Nb_2O_9$ Ceramics Produced by a Sol-gel Route (솔-젤법에 의해 제조한 $Mg_4Nb_2O_9$ 세라믹스의 마이크로파 유전특성)

  • Lim, Sung-Woo;Lee, Sang-Wook;Bang, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.281-282
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    • 2007
  • $Mg_4Nb_2O_9$ (MN) ceramics have been prepared by a sol-gel method. The powder characteristics, phase evolution, and microwave dielectric properties of the MN were investigated in various processing conditions such as sol-gel compositions, calcination, and sintering temperatures. A Qxfo value of 111,717 GHz with a ${\varepsilon}_r$ of 10.59 and a ${\tau}_f$ of $+1.736\;ppm/^{\circ}C$ was obtained after sintering at $1300^{\circ}C$ for 5 h.

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Characteristics of Nano composite Synthesized from Acrylic Resin and Silane-terminated Colloidal Silica sol (아크릴수지와 실란으로 표면처리된 콜로이드실리카 졸로 합성된 나노복합체의 특성평가)

  • Kang, Young-Taec;Kang, Dong-Pil;Myung, In-Hye;Lee, Jin-Kook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.214-215
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    • 2006
  • Colloidal Silica(CS)와 유기수지를 혼합하여 서로의 단점을 보완하는 나노복합재료를 합성하기 위해 친수성인 CS를 유기실란으로 표면처리하여 소수성화하고 유기수지와 복합체를 제조하였다. CS표면의 -OH기와 실란의 -OH기가 축합반응하여 화학결합을 형성함으로서 CS의 표면은 실란의 $CH_3$에 의해 소수성화되어 CS sol이 제조된다. CS sol과 유기수지는 공동용매에 의해 균일한 분산이 가능하고 필름 및 코팅제로의 제조가 가능하다. 사용된 무기물은 40nm 의 크기를 가지므로 가시광선영역의 빛을 산란하지 않아 투명하고 사용된 수지 또한 투명하여 우수한 광학적 특성을 나타낸다. 만들어진 필름은 CS의 영향으로 유기수지의 내열성보다 향상된 열분해온도와 높은 접촉각, 높은 절연율을 보였다.

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Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistors (Aging 효과가 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성에 미치는 영향)

  • Jang, Jaewon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • 제29권9호
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    • pp.527-531
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    • 2016
  • In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

Study on the Smoke Density Characteristics of Flame Retardant Sol Manufactured by a Sol-gel Method (졸-겔법으로 제조된 방염제졸의 연기밀도 특성에 관한 연구)

  • Cho, Kyeong-Rae;Lee, Chun-Ha;Kim, Si-Kuk
    • Fire Science and Engineering
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    • 제31권3호
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    • pp.11-18
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    • 2017
  • In this study, a non-halogen type organic-inorganic hybrid flame retardant sol, which can impart flame resistance to synthesize silicate of inorganic material and silane coupling agent of organic material by a sol-gel method, were newly manufactured. The addition of flame retardant will prevent loss of life in a fire because smoke from the flammability of interior finishing materials used as the construction materials poses a major danger. The smoke density measurement standard based on flame retardant performance standards, experiments were conducted according to the test equipment and procedures of ASTM E 662. The non-flaming mode experiment and the flaming mode experiment were conducted to confirm the performance of the manufactured flame retardant sol. As a result, the manufactured flame retardant sol improved the physical properties and heat resistance of existing flame retardants, and decreased the smoke production of the fire. Therefore, it may be possible to reduce the damage caused by smoke and expand the applications to various interior finishing materials.

A study on the characteristics of BST thin films with various Ba/Sr Ratio (조성변화에 따른 BST 박막의 특성에 관한연구)

  • 류정선;강성준;윤영섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • 제33A권6호
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    • pp.120-126
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    • 1996
  • In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

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The Effects of SiO2 Addition and Cooling Rate Change by Sol-gel Processing in Semiconducting BaTiO3 Ceramics (반도성 $BaTiO_3$ 세라믹스의 Sol-gel법에 의한 $SiO_2$ 첨가 및 냉각속도 효과)

  • 권오성;정용선;윤영호;이병하
    • Journal of the Korean Ceramic Society
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    • 제33권12호
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    • pp.1301-1310
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    • 1996
  • Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

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Preparation and Characterization of Alumina Thin Film by Sol-Gel Method (III) Preparation of Anti-Reflective Coating Glass (졸겔법에 의한 알루미나 박막의 제조 및 특성 (III) 저반사 코팅유리의 제조)

  • 이재호;최세영
    • Journal of the Korean Ceramic Society
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    • 제32권1호
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    • pp.57-62
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    • 1995
  • The coating condition of reproducible anti-reflective coating film and the light transmittance characteristics of the prepared anti-reflective coating glass were investigated as a study for the preparation of single-layer anti-reflective coating glasss. In case of coating with the sol in which the solvent was substituted with the ethanol with the addition of 0.1 mol HNO3, the coated glass showed the minimum value of the refractive index of 1.464, light transmittance of 94.2% at 550nm standard wavelength which is 3.2% higher than that of the parent glass, and the reflectance in the entire wave range of visible light. The refractive index represented its minimum at the sol concentration of 1.0 mol per 100mols of water and the higher the sol concentration, the higher the refractive index, resulting in the decrease of the light transmitance. The production condition of the reproducible anti-reflective coating on glass with the maximum transmittance of 94.2% was 4cm/min of withdrawal speed, 40$0^{\circ}C$ and 1 hour of heat treatment temperature and time, resulting in the film thickness of 94nm.

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Fabrication and Characterization of ZnO Schottky Diode Using Sol-Gel Process (Sol-Gel 공정을 이용한 ZnO 쇼트키 다이오드의 제작 및 특성평가)

  • Lee, Deuk-Hee;Kim, Kyoung-Won;Park, Ki-Ho;Kim, Sang-Sig;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.390-390
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    • 2010
  • We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

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Synthesis of Nano-Zirconia by Chemical Process and Its Application to Optical Display (화학적 공정에 의한 나노 지르코니아 합성 및 광학디스플레이 응용)

  • Park, Jung Ju;Kim, Bong Gu;Son, Jeong Hun;Jung, Yeon Gil
    • Korean Journal of Materials Research
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    • 제30권11호
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    • pp.609-614
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    • 2020
  • 3 mol% yttria-doped stabilized zirconia (3YSZ) is synthesized by a solvothermal process, and its characteristics are investigated using various methods. Also, the dispersibility of synthesized 3YSZ nanoparticles is observed with the species of surface modifier. The 3YSZ nano sol prepared with an optimum condition is employed in prism coating and its properties are evaluated. The synthesized 3YSZ nanoparticles show a globular shape with about 10 to 20 nm crystallite size. The mixed phases with the nano sol show a high specific surface of 178 ㎡/g. The prism sheet coated with the 3YSZ nano sol present an excellent refractive index, transmittance, and luminance; refractive index is 1.603, transmittance is 90.2 %, and luminance of coating film is improved by 5.9 % compared to that of the film without 3YSZ nano sol. It is verified that the surface modified 3YSZ is suitable as the prism sheet for optical displays.

Characteristics of Alumina-Supported TiO2 Composite Ultrafiltration Membranes Prepared by the Sol-Gel Method (Sol-Gel 법으로 제조한 알루미나 담체의 $TiO_2$ 복합 한외여과막의 특성)

  • 현상훈;최영민
    • Journal of the Korean Ceramic Society
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    • 제29권2호
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    • pp.107-118
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    • 1992
  • Alumina supports for TiO2 ultrafiltration membrane coating were prepared by presintering disk-type preforms at 140$0^{\circ}C$. These supports showed uniform microstructures which had the apparent porosity of 40%, the pore size distribution in the range of 0.1~0.5${\mu}{\textrm}{m}$, and the water flux of 1400ι/$m^2$.h at the pressure difference of 10 atm. The optimum pH and concentration of the TiO2 sol for coating were 0.8 and 1.0 wt%, respectively, and sol particles were identified as rutile forms of 20 nm size. Crack-free alumina-supported rutile TiO2 membranes could be prepared through well controlled drying and heating the gel layer coated by the sol-gel dipping. The pore size of the TiO2 membranes heat-treated at 50$0^{\circ}C$ for 2 hrs was 30~80$\AA$, and their thickness varied from 1.1 to 3.8 ${\mu}{\textrm}{m}$ in accordence with the dipping time (4~40 min). The flux of water through this composite membrane at 10 atm was found to be in the range from 800 to 1100ι/$m^2$.hr depending on the dipping time (10~40 min). The membrane thickness increased linearly with the square root of the dipping time and the slope was 0.62 ${\mu}{\textrm}{m}$/{{{{ SQRT { min} }}.

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