• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.537-538
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.45-48
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• 2006

Effectiveness and its possibility of ELA (Excimer Laser Annealing) for advanced Si TFT system on insulator are described. Currently, extensive study is carried out to realize an advanced SoG (System on Glass) based on LTPS (Low Temperature Poly-Si) technique. By reducing further the process temperature and by improving the fabrication process of LTPS, addressing TFT circuits for FPD (Flat Panel Display) can be mounted onto a flexible plastic as well as onto a glass substrate. Functional devices on the insulating panels are developed to be formed by using ELA. Although technical issues are remained for the fabrication process, Si transistors including 3D TFT structure formed by ELA is expected as a functional Si system on insulator in the ubiquitous IT era.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.265-272
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• 2023

In this study, the synthesis of nitrobenzene was carried out using sulfated silica catalyst. The study delved into H₂SO₄/SiO₂ as a solid acid catalyst and the effect of its weight variation, as well as the use of a microwave batch reactor in the synthesis of nitrobenzene. SiO₂ was prepared using the sol-gel method from TEOS precursor. The formed gel was then refluxed with methanol and calcined at a temperature of 600 ℃. SiO₂ with a 200-mesh size was impregnated with 98 % H₂SO₄ by mixing for 1 h. The resulting 33 % (w/w) H₂SO₄/SiO₂ catalyst was separated by centrifugation, dried, and calcined at 600 ℃. The catalyst was then used as a solid acid catalyst in the synthesis of nitrobenzene. The weights of catalyst used were 0.5; 1; and 1.5 grams. The synthesis of nitrobenzene was carried out with a 1:3 ratio of benzene to nitric acid in a microwave batch reactor at 60 ℃ for 5 h. The resulting nitrobenzene liquid was analyzed using GC-MS to determine the selectivity of the catalyst. Likewise, the use of a microwave batch reactor was found to be appropriate and successful for the synthesis of nitrobenzene. The thermal energy produced by the microwave batch reactor was efficient enough to be used for the nitration reaction. Reactivity and selectivity tests demonstrated that 1 g of H₂SO₄/SiO₂ could generate an average benzene conversion of 40.33 %.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.10
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• pp.1881-1891
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• 2000

Cenosphere particles of different fly ash formed at the pulverized coal power plant were hollow sphere or filled with small particles inside solid particles. And size was relatively larger than other fly ash particles as well as specific gravity was small to suspend in the water. In this paper, it was demonstrated to contain a variety of morphological particle type, and the physical and chemical properties related to the cenosphere and fly ash particles. Furthermore it was estimated the possibility to reuse the cenosphere particles on the base of cenosphere properties. Cenosphere formation resulted from melting of mineral inclusion in coal, and then gas generation inside the molten droplet. As the aluminosilicate particle was progressively heated, a molten surface layer developed around the solid core. Further heating leaded to cause the formation of fine particles at the core. The mass median diameter(MMD) of cenosphere particles was $123.11{\mu}m$ and the range of size distribution was $100{\sim}200{\mu}m$ with single modal. It was represented that specific density was $0.67g/cm^3$ fineness was $1135g/cm^3$. The chemical components of cenosphere were similar to other fly ash including $SiO_2$, $Al_2O_3$, but the amount of the chemical component was different respectively. In the case of fly ash, $SiO_2$ concentration was 54.75%, and $Al_2O_3$ concentration was 21.96%, so this two components was found in 76.71% of the total concentration. But in the case of cenosphere, it was represented that $SiO_2$ concentration was 59.17% and $Al_2O_3$ concentration was 30.16%, so this two components was found in 89.33% of the total concentration. Glassy component formed by the aluminosilicate was high in the cenosphere, so that it was suitable to use insulating heat material.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.690-698
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• 1995

The Poly-S $i_{1-x}$G $e_{x}$ thin films were deposited on oxidized Si wafer by RTCVD(rapid thermal chemical vapor deposition) using Si $H_4$and Ge $H_4$, at 450 ~5$50^{\circ}C$. The variation of Ge mole fraction and the deposition rate of S $i_{1-x}$G $e_{x}$ thin film were studied as a function of the deposition temperature and the Ge $H_4$/Si $H_4$input ratio, and the crystal phase and the surface roughness were studied by XRD and AFM(atomic force microscopy), respectively. The experimental results showed that the activation energy for the deposition of poly-S $i_{1-x}$G $e_{x}$ was about 32~37Kca /mol and the deposition rate of S $i_{1-x}$G $e_{x}$ thin films was increased with increasing the deposition temperature and the input ratio. From the analysis of composition, it was known that the Ge mole fraction within the poly-S $i_{1-x}$G $e_{x}$ thin film was decreased with decreasing the input ratio and increasing the deposition temperature. As-deposited S $i_{1-x}$G $e_{x}$ thin films were polycrystalline over the entire experimental range. But those were amorphous at the deposition temperature of 450, 475$^{\circ}C$ and the input ratio of 0.05. By adding the Ge $H_4$, poly-S $i_{1-x}$G $e_{x}$ thin film were deposited at relatively lower deposition temperatures($\leq$ 5$50^{\circ}C$) than those of conventional poly-Si(>$600^{\circ}C$). From surface roughness measurement of poly-S $i_{1-x}$G $e_{x}$ it was found that the surface roughness( $R_{i}$ ) increased with increasing the deposition temperature and input ratio.and input ratio.

• Journal of Microbiology and Biotechnology
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• v.18 no.12
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• pp.1919-1926
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• 2008

Statistical experimental designs; involving (i) a fractional factorial design (FFD) and (ii) a central composite design (CCD) were applied to optimize the culture medium constituents for production of a unique antifreeze protein by the Antartic micro algae Chaetoceros neogracile. The results of the FFD suggested that NaCl, KCl, $MgCl_2$, and ${Na}_{2}{SiO}_{3}$ were significant variables that highly influenced the growth rate and biomass production. The optimum culture medium for the production of an antifreeze protein from C. neogracile was found to be Kalle's artificial seawater, pH of $7.0{\pm}0.5$, consisting of 28.566 g/l of NaCl, 3.887 g/l of $MgCl_2$, 1.787 g/l of $MgSO_4$, 1.308 g/l of $CaSO_4$, 0.832 g/l of ${K_2}{SO_4}$, 0.124 g/l of $CaCO_3$, 0.103 g/l of KBr, 0.0288 g/l of $SrSO_4$, and 0.0282 g/l of ${H_3}{BO_3}$. The antifreeze activity significantly increased after cells were treated with cold shock (at $-5^{\circ}C$) for 14 h. To the best of our knowledge, this is the first report demonstrating an antifreeze-like protein of C. neogracile.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.209-209
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• 2003

The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.271-271
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• 2010

고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.

• Korean Journal of Materials Research
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• v.34 no.7
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• pp.330-340
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• 2024

Al-Mg-Si alloys are light weight and have excellent corrosion resistance, and are attracting attention as a liner material for high-pressure hydrogen containers in hydrogen fuel cell vehicles. Because it has excellent plastic hardening properties, it is also applied to car body panel materials, but it is moderate in strength, so research to improve the strength by adding Si-rich or Cu is in progress. So far, the authors have conducted research on the intergranular fracture of alloys with excessive Si addition from the macroscopic mechanical point of view, such as specimen shape. To evaluate their impact tensile properties, the split-Hopkinson bar impact test was performed using thin plate specimens of coarse and fine grain alloys of Al-Mg-X (X = Cr,Si) alloy. The effect of the shape of the specimen on the characteristics was studied through finite element method (FEM) analysis. As a result, it was found that the intergranular fracture of the alloy with excessive Si depended on the specimen width (W)/grain size (d), which can be expressed by the specimen size and grain size. As W/d decreases, the intergranular fracture transforms into a transgranular fracture. As the strain rate increases, the fracture elongation decreases, and the fracture surface of the intergranular fracture becomes more brittle. It was confirmed that intergranular fracture occurred in the high strain rate region even in materials with small grain sizes.