• Journal of Environmental Science International
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• v.9 no.1
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• pp.81-88
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• 2000

Every year, 1.1 million tons of rice-hull are produced in South Korea by the by-product in pounding rice. But they has mainly been utilized as a fuel, agricultural compost and moisture proofs. So, it's very valuable to use waste rice-hull for activated carbon manufacture. SiO2 content was the highest among inorganics in rice-hull. Therefore, the SiO2 extraction experiments were carried out under the various conditions of pH 9 to 14, reaction time from 2 to 24 hrs and various temperature of 20 to 100℃. The results showed that increase in pH and temperature enhanced SiO2 extraction from the carbonized rice-hull. The surface area of the carbonized rice-hull indicating activated carbon adsorption capacity was very small as 178∼191 m2/g at first. However, it was increased to 610∼675 m2/g when extracted in alkali solution at 100℃. When the mixing rate of carbonized rice-hull and NaOH was 1:1.5, iodine No. and surface area of activated rice-hull during 10 min at 700℃ were 1,650 mg/g and 1837 m2/g, respectively. Subsequently, an activated carbon with specific surface area of 1,300∼1,900m2/g was manufactured in a short contact time of 10∼30 min with a mixing rate of 1:1.5 in carbonized rice-hull and NaOH, and iodine No. and specific surface area increased as the amount of SiO2 removal increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.81-84
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• 2004

Required characteristics of poly-Si TFT's are investigated for the implementation of analog circuits to be integrated on System-on-Glass (SoG). Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT's are derived as a function of the resolution of display system. Effective mobility of poly-Si TFT's required for the realization of source driver is analyzed for various panel sizes.

• Resources Recycling
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• v.30 no.4
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• pp.20-26
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• 2021

Solar grade silicon (SoG-Si) has been commercially supplied mainly from off-grade high-purity silicon manufactured for electronic-grade Si (EG-Si). Therefore, for wider application of solar cells, the development of a refining process at a considerably lower cost is required. The most cost-effective and direct approach for producing SoG-Si is to purify and upgrade metallurgical-grade Si (MG-Si). In this study, directional solidification of molten MG-Si was conducted in a high-frequency induction furnace to remove iron from molten Si. The experimental conditions and results were also discussed with respect to the effective segregation coefficient, Scheil equation, and Peclet number. The study showed that when the descent velocity of the specimen decreased, the macro segregations of impurities and ingot purities increased. These results were derived from the decrease in the effective segregation coefficient with the decrease in the rate of descent of the specimen.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.69-76
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• 2003

For lithium secondary microbattery anode, the tin oxide thin films with Si addition (0, 2, 6, 10, 20 ㏖%) were prepared with R.F. magnetron sputtering at substrate temperature of 30$0^{\circ}C$ and Ar:O$_2$=7:3 atmosphere. As Si addition amount increased, Si-O bonding density increased and Sn-O bonding density decreased. The addition of optimum Si amount led the decrease of Sn oxidation state so that the irreversible capacity reduced and cycle characteristic enhanced during charge-discharge test. SnO$_2$films with 6 ㏖% Si had the highest reversible capacity of 700 mAh/g after 100 cycles.

• Transactions of Materials Processing
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• v.13 no.6 s.70
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• pp.522-527
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• 2004

Permalloys were successfully fabricated by melt drag casting in the present study, and their microstructure and consequent magnetic properties have been investigated as a function of Si content. In order to understand the relationship between magnetic properties and Si content, microstructure and texture were observed and phase analysis were performed by TEM. The effective permeability went through a maximum value at $2\%$ Si and then decreased with increasing Si content. Increasing Si content enlarged grain size, which resulted in improvement of permeability. However, over-added Si caused the formation of $Ni_3Fe$ order phase so that $5\%$ Si added permalloys had the smallest permeability.

• Journal of Microbiology and Biotechnology
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• v.18 no.12
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• pp.1903-1907
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• 2008

Prodigiosin is a natural red pigment with algicidal activity against Cochlodinium polykrikoides, a major harmful red-tide microalga. To increase the yield of prodigiosin production by Hahella chejuensis KCTC 2396, significant medium components were determined using a two-level Plackett-Burman statistical design technique. Among 12 components included in basal medium, $NaHCO_3$, ${Na}_{2}{SiO}_{3}$, ${NH_4}{NO_3}$, ${Na}_{2}{SO}_{4}$ and $CaCl_2$ were determined to be important for prodigiosin production. The medium formulation was finally optimized using a Box-Behnken design as follows: 1% sucrose; 0.4% peptone; 0.1 % yeast extract; and (g/l): NaCl, 20.0; ${Na}_{2}{SO}_{4}$, 9.0; $CaCl_2$, 1.71; KCl, 0.4; and (mg/l): ${H_3}{BO_3}$, 10.0; KBr, 50.0; NaF, 2.0; $NaHCO_3$, 45.0; ${Na}_{2}{SiO}_{3}$, 4.5; ${NH_4}{NO_3}$, 4.5. The predicted maximum yield of prodigiosin in the optimized medium was 1.198 g/l by the Box-Behnken design, whereas the practical production was 1.495 g/l, which was three times higher than the basal medium (0.492 g/l).

• Solar Energy
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• v.18 no.3
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• pp.137-146
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• 1998

In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

• Journal of Industrial Technology
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• v.32 no.A
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• pp.119-123
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• 2012

Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.

• Resources Recycling
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• v.29 no.5
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• pp.48-54
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• 2020

Sulphuric acid (H₂SO₄) leaching and hydrolysis were experimented for the recovery of titanum dioxide (TiO₂) from the water-leached residue followed by soda-roasting spent SCR catalysts. Sulphuric acid leaching of Ti was carried out with leachate concentration (4~8 M) and the others were fixed (temp.: 70 ℃, leaching time: 3 hrs, slurry density: 100 g/L, stirring speed: 500 rpm). For recovering of Ti from the leaching solution, hydrolysis precipitation was conducted at 100 ℃ for 2 hours in various mixing ratio (leached solution:distilled water) of 1:9 to 5:5. The maximum leachability was reached to 95.2 % in 6 M H₂SO₄ leachate. on the other hand, the leachability of Si decreased dramatically 91.7 to 3.0 % with an increase of H₂SO₄ concentration. Hydrolysis precipitation of Ti was proceeded with leaching solution of 8 M H₂SO₄ with the lowest content of Si. The yield of precipitation increased proportionally with a dilution ratio of leaching solution. Moreover, it increased generally by adding 0.2 g TiO₂ as a precipitation seed to the diluted leaching solution. Ultimately, 99.8 % of TiO₂ can be recovered with the purity of 99.46 % from the 1:9 diluted solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.