• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.287-292
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• 2001

본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

• Koreanishche Zeitschrift fur Deutsche Sprachwissenschaft
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• v.4
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• pp.1-27
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• 2001

이 글의 목적은 독일어 신체어휘 관련 관용구들 가운데 ${\lceil}$Duden Band 11${\rfloor}$에 수록된 108개의 $\lceil$손$\rfloor$ 관련 관용구를 대상으로 이들의 형태$\cdot$통사구조를 파악하고, 그들을 모형화하는 것이다. 우리는 연구 대상을 문장에서 결합가 보유어로서 술어의 기능을 하는 관용구에 한정했다. 우리는 $\lceil$손$\rfloor$ 관련 관용구를 보충어의 수와 형태에 따라 크게 세 가지 부류, 즉 1가, 2가, 3가의 관용구로 구분하였다 보충어의 형태는 명사구(Sn, Sd, Sa)와 전치사구(pS)에 한정했으며 문장형태의 보충어, 예를 들어 부문장(NS)과 부정사문(Inf) 형태는 고려하지 않았다. 이들이 보충어로 간주될 수 있는지의 여부는 아직 더 많은 연구를 필요로 하기 때문에 다음 과제로 남겨두었다. 일차적으로 외적 결합가($\"{a}u{\beta}ere\;Valenz)$에 따라, 이차적으로는 내적 결합가(innere Valenz)에 따라 108개의 $\lceil$손$\rfloor$ 관련 관용구를 분석한 결과 우리는 다음과 같은 형태$\cdot$통사적 문형을 얻을 수 있었다. $\cdot$ 1가 동사 관용구: 1) PL-Sn : (1) PL[VPL - Sa] - Sn (2) PL(VPL - pS) - Sn (3) PL[VPL - Sa - pS] - Sn (4) PL[VPL - pS - pS] - Sn Sondergruppen: PL[VPL - Sa - Inf] - Sn PL[VPL - pS - Inf] - Sn 2) PL - Sd: (1) PL[VPL - Sn] - Sd (2) PL[VPL - Sn(es) - pS] - Sd $\cdot$ 2가 동사 관용구1) PL - Sn - Sd: (1) PL[VPL - Sa] - Sn - Sd (2) PL[VPL - pS] - Sn - Sd (3) PL[VPL - Sa - pS) - Sn - Sd 2) PL - Sn - pS: (1) PL[VPL - Sa] - Sn - pS (2) PL[VPL - pS] - Sn - pS (3) PL(VPL - Sa - pS) - Sn - pS 3) PL[VPL - pS) - Sn -Sa $\cdot$ 3가 동사 관용구: (1) PL[VPL - pS] - Sn - Sd - Sa (2) PL[VPL - pS] - Sn - Sa - pS (3) PL[VPL - Sa] - Sn - Sd - pS 이러한 분류가 보여주듯이, 독일어에는 1가, 2가, 3가의 관용구가 있으며, 구조 외적으로 동일한 통사적 결합가를 갖는다 하더라도 구조 내적 성분구조가 다르다는 것을 알 수 있다. 우리는 이 글이 외국어로서의 독일어를 배우는 이들에게 독일어의 관용구를 보다 올바르게 이해할 수 있는 방법론적인 토대를 제공함은 물론, (관용어) 사전에서 외국인 학습자를 고려하여 관용구를 알기 쉽게 기술하는 데 도움을 줄 수 있기를 바란다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.33-37
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• 2008

A noticeable amount of Kirkendall voids formed at the Sn-3.5Ag solder joint with electroplated Cu, and that became even more significant when an additive was added to Cu electroplating bath. With SPS, a large amount of voids formed at the $Cu/Cu_3Sn$ interface of the solder joint during thermal aging at $150^{\circ}C$. The in-situ AES analysis of fractured joints revealed S segregation on the void surface. Only Cu, Sn, and S peaks were detected at the fractured $Cu/Cu_3Sn$ interfaces, and the S peak decreased rapidly with AES depth profiling. The segregation of S at the $Cu/Cu_3Sn$ interface lowered interface energy and thereby reduced the free energy barrier for the Kirkendall void nucleation. The drop impact test revealed that the electrodeposited Cu film with SPS degraded drastically with aging time. Fracture occurred at the $Cu/Cu_3Sn$ interface where a lot of voids existed. Therefore, voids occupied at the $Cu/Cu_3Sn$ interface are shown to seriously degrade drop reliability of solder joints.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1472-1474
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• 1997

In this study, the $Nb_3Sn$ wire was tried to fabricate by internal tin process to investigate the relationship between the processing parameters in a cold working and the microstructure. The critical current densities of $Nb_3Sn$ wires were evaluated in magnetic fields at 4.2 K. $Nb_3Sn$ compound layer was found to be formed between Nb core and Cu-Sn. The Cu part in the wire transformed to Cu-Sn by the reaction with Sn and the Sn in the Cu-Sn part reacted with Nb.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• Information Systems Review
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• v.16 no.3
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• pp.191-214
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• 2014

In this study, based on Privacy Calculus Model, we study whether users' intention of continuous use of closed-type SNS is affected by information privacy concern. In addition, we propose a model that studies if the major factors of the intention of continuous use which are trust, satisfaction and benefits could control the information privacy concern's effect on the intention of use. As a result, companies have to consider protecting the psychological privacy and information privacy of the individual when they design SNS.