• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.74.2-74.2
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• 2000

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.41-44
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• 1997

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.181.2-181.2
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• 2016

OLED 소자는 발광 방향에 따라 Bottom Emission 방식과 Top Emission 방식으로 나뉜다. 이 중 대면적 OLED TV 적용에 개구율이 더 높은 Top Emission방식을 선호하는 추세이다. 높은 개구율을 가진 Top Emission OLED소자를 위해서는 투명하고 전도성이 높은 캐소드가 중요하다. 본 연구에서는 Themal Evaporation 시스템을 이용하여 증착한 $SnO_2/Ag-Pd-Cu(APC)/SnO_2$ hybrid 전극의 특성을 연구하고 Oxide/Metal/Oxide(OMO) hybrid 박막의 bending mechanism을 제시하였다. base pressure는 $1{\times}10^{-6}Torr$로 고정하고 $SnO_2$ 박막은 0.34A / 0.32V, APC 박막은 0.46A / 0.40V의 power로 성막하였다. APC와 $SnO_2$의 두께를 변수로 OMO 전극을 제작하였고 그 전기적, 광학적 특성을 Hall measurement, UV/Visible spectroscopy을 이용하여 분석하고 Figure of merit 값을 바탕으로 최적 두께를 설정하였다. UPS(Ultraviolet Photoelectron Spectroscopy) 분석으로 $SnO_2/APC/SnO_2$ 전극의 일함수을 통해 투명 cathode로 쓰였을 때 $SnO_2$ 층이 buffer layer역할을 함을 확인하였다. XPS(X-ray photoelectron spectroscopy)를 이용하여 정성분석과 정량분석을 하였고 OMO hybrid 전극의 bending mechanism 연구를 위해 다양한 bending test (Inner/Outer dynamic fatigue test, twisting test, rolling test)를 진행하였다. 물리적 힘이 가해진 OMO hybrid 전극의 표면과 구조는 FE-SEM(Field Emission Scanning Electron Microscope) 분석을 통해서 확인할 수 있었다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.304-308
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• 2000

WO$_3$/SnO$_2$ceramics has been suggested as an effective sensing material for monitoring offensive odor or pollutant gases. This work was focussed on improving long-term stability, which has been a principal problem generally taking place in SnO$_2$semiconductor gas sensor. Miniaturized thick film gas sensors were fabricated by screen printing technique. Two types of sensor materials, W doped SnO$_2$and WO$_3$mixed SnO$_2$, were comparatively investigated on those long-term stability and sensitivites to several gases. Small amount of W doping(0.1 mol%) into SnO$_2$largely improved the long-term stability. The W(0.1 mol%) doped SnO$_2$gas sensor had higher sensitivities to both acetone and alcohol compared with WO$_3$(5 wt%) mixed SnO$_2$gas sensor. On the contrary, WO$_3$(5 wt%) mixed SnO$_2$gas sensor showed more superior sensitivity to cigarette smoke due to larger W content.

• 한국재료학회지
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• 제30권7호
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• pp.338-342
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• 2020

Tin oxide (SnO₂) nanocrystals are synthesized by a thermal evaporation method using a mixture of SnO₂ and Mg powders. The synthesis process is performed in air at atmospheric pressure, which makes the process very simple. Nanocrystals with a belt shape start to form at 900 ℃ lower than the melting point of SnO₂. As the synthesis temperature increases to 1,100 ℃, the quantity of nanocrystals increases. The size of the nanocrystals did not change with increasing temperature. When SnO₂ powder without Mg powder is used as the source material, no nanocrystals are synthesized even at 1,100 ℃, indicating that Mg plays an important role in the formation of the SnO₂ nanocrystals at temperatures as low as 900 ℃. X-ray diffraction analysis shows that the SnO₂ nanocrystals have a rutile crystal structure. The belt-shaped SnO₂ nanocrystals have a width of 300~800 nm, a thickness of 50 nm, and a length of several tens of micrometers. A strong blue emission peak centered at 410 nm is observed in the cathodoluminescence spectra of the belt-shaped SnO₂ nanocrystals.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• 한국재료학회지
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• 제26권4호
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.38-43
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• 1996

A coprecipitation method was used for preparing Ca and Pt doped $SnO_2$ fine powder. Components of the powder were investigated by XPS and SIMS. Crystallite size and specific surface area were investigated by TEM, XRD, and BET analysis. $SnO_2$(Ca)/Pt based thick film devices were prepared by a screen printing technique for methane gas detection. Then sensing characteristics of the devices were investigated. As Ca and Pt added, the crystal growth of $SnO_2$ was suppressed during calcining and sintering, and the sensitivity of $SnO_2$(Ca)/Pt thick film to methane gas was enhanced. For the Pt doped $SnO_2$ fine particle, the thick film device shows sensitivity of about 83% to 2000 ppm methane gas at an operating temperature of >$400^{\circ}C$.