• Title/Summary/Keyword: SnO_2

Search Result 1,490, Processing Time 0.027 seconds

A Study on the ${AI_2}{O_3}$/ and ${SnO_2}-{AI_2}{O_3}$/AI Thin Film Humidity Sensors (${AI_2}{O_3}$/ AI 및 ${SnO_2}-{AI_2}{O_3}$/AI박막습도 센서에 관한 연구)

  • Jeon, Chun-Saeng
    • Korean Journal of Materials Research
    • /
    • v.4 no.2
    • /
    • pp.159-165
    • /
    • 1994
  • Two kinds of humidity sensor are made, one by anodizing pure aluminum and the other by evaporation Sn02 on the anodized pure alumia film, and their electrical characteristics are investigated in various humidity atmosphere. The change of surface resistance with humidity of $AI_2O_3/AI$ and $SnO_2-AI_2O_3/Al$ sensors are found to be $1.40 \times 10^{-2}\Omega$/RH and $1.56 \times 10^{-2}\Omega$/RH, respectively. The hysteresis phenomena associated with the irreversibility of surface resistance-humidity is less in $SnO_2-AI_2O_3/Al$ sensor than in $AI_2O_3/AI$. It is concluded that $SnO_2-AI_2O_3/Al$ film can be used as humidity sensor in room temperature region because temperature dependence of surface resistance of the film is found to be as $0.56 \times 10^{-2} \Omega /^{\circ}C$ in O~ $20^{\circ}C$ range, where as $2.50 \times 10^{-2} \Omega /^{\circ}C$ in 40-$50^{\circ}C$.

  • PDF

Determination of Ascorbic Acid, Acetaminophen, and Caffeine in Urine, Blood Serum by Electrochemical Sensor Based on ZnO-Zn2SnO4-SnO2 Nanocomposite and Graphene

  • Nikpanje, Elham;Bahmaei, Manochehr;Sharif, Amirabdolah Mehrdad
    • Journal of Electrochemical Science and Technology
    • /
    • v.12 no.2
    • /
    • pp.173-187
    • /
    • 2021
  • In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn2SnO4-SnO2 and graphene (ZnO-Zn2SnO4-SnO2/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn2SnO4-SnO2/Gr/CPE, and the impact of scan rate and the concentration of H+ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn2SnO4-SnO2/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells (18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석)

  • Kim, Sun Cheul;Kim, Seung Tae;Ahn, Byung Tae
    • Current Photovoltaic Research
    • /
    • v.3 no.2
    • /
    • pp.54-60
    • /
    • 2015
  • ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

Toulene Removal over the Water-suspended Sn-Incorporated $TiO_2$ Photocatalyst Prepared by Solvothermal Method (Solvothermal 법에 의해 제조된 Sn-$TiO_2$ 나노 반도체 촉매 상에서의 수중 부유 톨루엔 광분해 반응)

  • Kim, Ji-Yeon;Kim, Ji-Eun;Kang, Mi-Sook
    • Clean Technology
    • /
    • v.16 no.1
    • /
    • pp.46-50
    • /
    • 2010
  • This study focuses on the removal of water-suspended toluene of a representative sick house compounds in a liquid photo-system using nanometer-sized Sn-incorporated $TiO_2$ which was synthesized by a solvothermal method. The characteristics of the synthesized Sn-$TiO_2$ were analyzed by X-ray Diffraction (XRD), Transmission electron microscopy (TEM), Scanning electron microscopy (SEM), and UV-visible spectroscopy (UV-Vis). To estimate the photocatalytic activity of Sn-$TiO_2$, the photodegradation of water-suspended toluene was performed, and the remaining concentration was determined using UV-visible spectroscopy. The water-suspended toluene photodegradation over Sn-incorporated $TiO_2$ catalyst was better than that over pure $TiO_2$ (anatase). The water-suspended toluene of 500 ppm was perfectly decomposed within 300 minutes over 0.01 mol% Sn-$TiO_2$.

Characteristics and Preparation of Gas Sensors Using Nano SnO2:CNT (나노 SnO2:CNT를 이용한 가스센서의 제작 및 특성연구)

  • Yu, Il
    • Korean Journal of Materials Research
    • /
    • v.26 no.9
    • /
    • pp.468-471
    • /
    • 2016
  • $SnO_2:CNT$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and were annealed at $300^{\circ}C$ in air. The nano $SnO_2$ powders were prepared by solution reduction method using tin chloride ($SnCl_2.2H_2O$), hydrazine ($N_2H_4$) and NaOH. Nano $SnO_2:CNT$ sensing materials were prepared by ball-milling for 24h. The weight range of CNT addition on the $SnO_2$ surface was from 0 to 10 %. The structural and morphological properties of these sensing material were investigated using X-ray diffraction and scanning electron microscopy and transmission electron microscope. The structural properties of the $SnO_2:CNT$ sensing materials showed a tetragonal phase with (110), (101), and (211) dominant orientations. No XRD peaks corresponding to CNT were observed in the $SnO_2:CNT$ powders. The particle size of the $SnO_2:CNT$ sensing materials was about 5~10 nm. The sensing characteristics of the $SnO_2:CNT$ thick films for 5 ppm $H_2S$ gas were investigated by comparing the electrical resistance in air with that in the target gases of each sensor in a test box. The results showed that the maximum sensitivity of the $SnO_2:CNT$ gas sensors at room temperature was observed when the CNT concentration was 8wt%.

CO2 Gas Responsibility of SnO5 Thin Film Depending on the Annealing Temperature (SnO2 박막의 열처리 온도에 따른 CO2가스 반응성)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
    • /
    • v.16 no.4
    • /
    • pp.75-78
    • /
    • 2017
  • The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

  • PDF

A Comparison Study on Quantum Dots Light Emitting Diodes Using SnO2 and TiO2 Nanoparticles as Solution Processed Double Electron Transport Layers (용액공정 기반 SnO2와 TiO2를 이중 전자수송층으로 적용한 양자점 전계 발광소자의 특성비교 연구)

  • Shin, Seungchul;Kim, Suhyeon;Jang, Seunghun;Kim, Jiwan
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.27 no.3
    • /
    • pp.69-72
    • /
    • 2020
  • In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO2 NPs is lower than SnO2 NPs. Therefore, it is expected that inserting TiO2 NPs between the SnO2 layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO2 layer.

Synthesis of Well-Distributed SnO2-Sn-Ag3Sn Nanoparticles in Carbon Nanofibers Using Co-Electrospinning (이중 전기방사법을 이용하여 SnO2-Sn-Ag3Sn 나노 입자가 균일하게 내재된 탄소 나노섬유의 합성)

  • An, Geon-Hyoung;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
    • /
    • v.23 no.2
    • /
    • pp.143-148
    • /
    • 2013
  • Well-distributed $SnO_2$-Sn-$Ag_3Sn$ nanoparticles embedded in carbon nanofibers were fabricated using a co-electrospinning method, which is set up with two coaxial capillaries. Their formation mechanisms were successfully demonstrated. The structural, morphological, and chemical compositional properties were investigated by field-emission scanning electron spectroscopy (FESEM), bright-field transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In particular, to obtain well-distributed $SnO_2$ and Sn and $Ag_3Sn$ nanoparticles in carbon nanofibers, the relative molar ratios of the Ag precursor to the Sn precursor including 7 wt% polyacrylonitrile (PAN) were controlled at 0.1, 0.2, and 0.3. The FESEM, bright-field TEM, XRD, and XPS results show that the nanoparticles consisting of $SnO_2$-Sn-$Ag_3Sn$ phases were in the range of ~4 nm-6 nm for sample A, ~5 nm-15 nm for sample B, ~9 nm-22 nm for sample C. In particular, for sample A, the nanoparticles were uniformly grown in the carbon nanofibers. Furthermore, when the amount of the Ag precursor and the Sn precursor was increased, the inorganic nanofibers consisting of the $SnO_2$-Sn-$Ag_3Sn$ nanoparticles were formed due to the decreased amount of the carbon nanofibers. Thus, well-distributed nanoparticles embedded in the carbon nanofibers were successfully synthesized at the optimum molar ratio (0.1) of the Ag precursor to the Sn precursor after calcination of $800^{\circ}C$.

SnO2 Nanowire Networks on a Spherical Sn Surface: Synthesis and NO2 sensing properties (구형 Sn 표면의 SnO2 나노와이어 네트워크: 합성과 NO2 감지 특성)

  • Pham, Tien Hung;Jo, Hyunil;Vu, Xuan Hien;Lee, Sang-Wook;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2018.06a
    • /
    • pp.142.2-142.2
    • /
    • 2018
  • One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

  • PDF