• 한국재료학회지
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• 제9권1호
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• pp.14-17
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• 1999

본 실험에서는 리튬 이차 박막전지의 음극물질로 주석 산화물 박막을 RF magnetron sputter을 이용하여 증착하였다. RF power를 2.5w/$\textrm{cm}^{2}$로 고정시키고, 공정압력을 5mtorr에서 30mtorr까지 변화시키면서 막의 결정성 및 응력 변화, 굴절률 등을 측정하여 주석 산화물 박막의 음극 특성을 조사하였다. 분석한 결과, 압력이 증가함에 따라 증착 속도는 $125{\AA}$/min에서 $58{\AA}$/min까지 감소하였으며, 결정 구조는 (110)면에서 (101)면과 (211)면으로 천이됨을 보였다. 또한 막응력은 공정압력 20mtorr를 기준으로 압축응력에서 인장응력으로 바뀌었고, 굴절률도 1.93에서 1.79로 감소하였다. 공정압력변화에 따른 충방 전 시험결과 공정압력 5mtorr에서 가장 큰 가역적 용량($483.91\mu\textrm{Ah}/\textrm{cm}^{2}-\mu\textrm{m}$을 보였으나, 사이클이 진행될수록 사이클 퇴화가 점차 증가하였고, 10mtorr에서는 가역적 용량 및 사이클 특성 모두 좋은 것으로 나타났다. 이는 공정 압력이 감소함에 따라 막의 밀도의 증가로 전기 화학적으로 반응할 수 있는 활물질의 양이 증가한 것으로 생각되며 또한, 사이클 특성은 막응력에 의해 크게 영향을 받는다고 생각된다.

• 한국표면공학회지
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• 제32권3호
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.453.1-453.1
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• 2014

Fluorine-doped tin oxide (FTO), which is commonly used in dye-sensitized solar cells (DSSCs), is a promising material of transparent conducting oxides (TCOs) because of advantages such as high chemical stability, high resistance, high optical transparency (>80% at 550nm), and low electrical resistivity (${\sim}10-4{\Omega}{\cdot}cm$). Especially, dye-sensitized solar cells (DSSCs) have been actively studied since Gratzel's research group required FTO substrate as a charge collector. When FTO substrates are used in DSSCs, photo-injected electrons may experience recombination at interface between dye-bonded semiconductor oxides ($TiO_2$) on FTO substrate and the electrolyte. To solve these problems, one is that because recombination at FTO substrate cannot be neglected, thin $TiO_2$ layer on FTO substrate as a blocking layer was introduced. The other is to control the morphology of surface on FTO substrate to reduce a loss of electrons. The structural, electrical, and optical characteristics of morphology controlled-FTO thin films as TCO materials were analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Hall Effect Measurement, and UV spectrophotometer. The performance of DSSCs fabricated with morphology controlled FTO substrates was performed using Power Conversion Efficiency (PCE). We will discuss these results in detail in Conference.

• 한국정보통신학회논문지
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• 제18권2호
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• pp.394-400
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• 2014

본 연구에서는 고주파 마그네트론 스퍼터링 법으로 상온에서 RF 파워를 30 에서 60W 로 변화시켜가며 유리기판 위에 ITZO 박막을 제작하여 전기적, 광학적, 구조적 특성을 조사하였다. RF 파워 50W 에서 증착한 ITZO 박막이 $10.52{\times}10^{-3}{\Omega}^{-1}$의 제일 큰 재료평가지수를 나타내었으며, 이때 $3.08{\times}10^{-4}{\Omega}-cm$의 비저항과 $11.41{\Omega}/sq.$의 면저항으로 가장 우수한 전기적 특성을 보였다. 광학적 특성을 측정한 결과, 가시광 영역 (400~800 nm) 에서의 평균 투과도는 모든 ITZO 박막에서 80 % 이상으로 나타났다. XRD 측정을 통해 RF 파워에 상관없이 모든 ITZO 박막이 비정질 구조를 가지고 있음을 확인할 수 있었다. FESEM 과 AFM 으로 ITZO 박막의 표면 형상을 관찰한 결과, 모든 ITZO 박막이 핀홀이나 크랙 같은 결함이 없는 매우 부드러운 표면을 가지며, RF 파워 50W 에서 증착한 박막이 0.254 nm의 가장 작은 표면 거칠기를 나타내었다. 본 연구를 통해 비정질 ITZO 박막이 유기발광다이오드와 같은 차세대 디스플레이 소자에서 ITO 박막을 대체할 매우 유망한 재료라는 것을 알 수 있었다.

• 태양에너지
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• 제15권2호
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• pp.91-99
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• 1995

분무열분해법으로 $SnO_2$ 박막을 증착하여 반응변수들이 증착에 미치는 영향을 연구하였다. 분무용액의 농도가 0.01M인 경우 증착온도가 낮을 때에는 증착과정이 표면반응의 지배를 받으며 증착온도가 증가함에 따라 $400^{\circ}C$까지는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달의 지배율이 증가한다. $400^{\circ}C$ 이상에서는 분무압력이 낮을 때는 물질전달에 의해, 분무압력이 높을 때는 표면반응에 의해 지배를 받는다. 분무용액의 농도가 증가함에 따라 증착속도는 증가하였으며 본 실험의 경우 Rideal-Eley 기구에 의해 증착반응이 일어났다. 기판의 온도가 증가함에 따라 증착속도는 증가하다가 $400^{\circ}C$ 이상에서는 균일한 핵생성에 의하여 증착속도는 감소하였다. 분무지속 시간에 비례하여 증착층의 두께는 증가하였으며 기판과 증착층간에는 물리적인 접착을 이루고 있다.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• 한국세라믹학회지
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• 제33권5호
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.