• 제목/요약/키워드: SnO2 thin films

검색결과 303건 처리시간 0.026초

RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조 (Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering)

  • 석혜원;김세기;이현석;임태영;황종희;최덕균
    • 한국재료학회지
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    • 제20권12호
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

마그네트론 스퍼터링 증착 조건에 따른 $\textrm{SnO}_2$ 박막의 미세구조와 가스검지특성 변화 (Effects of Process Variables on the Microstructure and Gas Sensing Characteristics of Magnetron Sputtered $\textrm{SnO}_2$Thin Films)

  • 김종민;문종하;이병택
    • 한국재료학회지
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    • 제9권11호
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    • pp.1083-1087
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    • 1999
  • 마그네트론 스퍼터로 알루미나 기판위에 $\textrm{SnO}_2$박막을 증착하여 증착온도, rf 전력, 공정기체 중 산소분율(O$_2$/Ar)등 공정변수에 따른 박막의 미세구조와 가스검지 특성을 조사하였다. 증착된 박막의 미세구조는 결정성이 없는 비정질 구조(A), 비정질 기지 중에 결정이 분산된 구조(A=P), 방향성이 거의 없는 다결정 구조(P), 미세 기둥구조(FC), 조대한 기둥구조(CC), 고밀도 특성을 보이는 섬유상 구조(Zone T)의 6가지로 분류되었다. 공정 중 산소를 첨가하지 않았을 때, 저온, 낮은 rf 전력에서 A 구조가, 저온, 높은 rf 전력에서 A+P 구조가, 고온, 높은 rf 전력에서 P 구조가 형성되었고, 산소 첨가 시는 낮은 rf 전력, 저온에서 FC 구조가, 낮은 rf 전력, 고온에서 CC 구조, 높은 rf 전력, 저온에서 Zone T 구조가 형성되었다. 위의 미세구조를 가진 박막들을 센서로 제작하여 $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$에서 CO 가스에 대한 민감도를 측정한 결과$200^{\circ}C$에서는 감도가 나타나지 않으며, $300^{\circ}C$, $400^{\circ}C$에서는 FC 구조를 가진 센서가 다른 미세구조를 가진 센서에 비해 우수한 감도를 나타냈다. 이는 미세한 column 들로 이루어진 FC 구조의 높은 비표면적으로 인해 산소와 피검가스의 흡착이 많아지게 되고, 가스흡착에 의한 저항변화, 즉 감도가 높게 나타나는 것으로 판단된다.

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Performance of Solution Processed Zn-Sn-O Thin-film Transistors Depending on Annealing Conditions

  • Han, Sangmin;Lee, Sang Yeol;Choi, Jun Young
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.62-64
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    • 2015
  • We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

산화주석 나노선을 이용한 VOCs 센서 (VOCs(Volatile Organic Compounds) sensor using SnO2 nanowires)

  • 황인성;김선중;김윤성;주병권;이종흔
    • 센서학회지
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    • 제17권1호
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    • pp.69-74
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    • 2008
  • VOCs (Volatile Organic Compound) sensors were fabricated using $SnO_2$nanowires-based thin films and its gas sensing behaviors were studied. The $SnO_2$ nanowires synthesized from a thermal evaporation process were dispersed in a solution and the sensor film was prepared by dropping the slurry on the substrate with the electrodes and an embedded heater. The gas response (Ra/Rg, Ra: resistance in air, Rg: resistance in gas) to $30{\sim}40$ ppm Benzene, Ethyl Benzene, o-xylene were in the range of $39{\sim}42$, which were significantly higher than those to 50 ppm of CO, $CH_4$ and $C_3H_8$ ($12{\sim}19$).

제작 온도 및 산소 분압에 의존하는 인듐 주석 산화물의 전기적, 광학적 성질 (Transport and optical properties of indium tin oxide films fabricated by reactive magnetron sputtering)

  • 황석민;주홍렬;박장우
    • 한국광학회지
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    • 제14권3호
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    • pp.343-348
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    • 2003
  • 자체 제작한 고밀도(이론 밀도의 99%) ITO(I $n_2$ $O_3$:Sn $O_2$=90 wt%) 타깃과 직류 마그네트론 스퍼터링 방법을 이용하여 산소분압 $P_{o_{2}}$ (0 $P_{o_{2}}$ $\leq$$10^{-5}$ torr)와 성장 온도 Ts(10$0^{\circ}C$ $T_{s}$$\leq$35$0^{\circ}C$)를 변화시키면서 ITO 박막을 제작하고 전기적, 광학적 특성을 조사하였다. ITO박막의 비저항은 제작 온도가 증가함에 따라 감소하다가 $T_{s}$=30$0^{\circ}C$일 때 최저 비저항값 0.30 mΩ.cm를 나타내었고 $T_{s}$>30$0^{\circ}C$ 이상에서는 약간 증가하였다. $T_{s}$=30$0^{\circ}C$에서 제작한 ITO 박막의 최대 전하 농도는 6.6$\times$$10^{20}$ /㎤이었다. $T_{s}$를 고정하고 ITO 박막 제작 시 사용한 산소분압이 증가함에 따라 전하농도, 전하유동도는 급격하게 감소하여 비저항이 크게 증가하는 것으로 나타났다 ITO박막의 최저 비저항과 최대 전하 유동도는 각각 0.3 mΩ.cm와 39.3 $\textrm{cm}^2$/V.s였다. 또한 가시광 영역 (400~700 nm)에서 ITO박막의 광투과도는 80~90%로 높게 나타났다.나타났다.

Chemiresistive Sensor Array Based on Semiconducting Metal Oxides for Environmental Monitoring

  • Moon, Hi Gyu;Han, Soo Deok;Kang, Min-Gyu;Jung, Woo-Suk;Jang, Ho Won;Yoo, Kwang Soo;Park, Hyung-Ho;Kang, Chong Yun
    • 센서학회지
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    • 제23권1호
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    • pp.15-18
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    • 2014
  • We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

스핀코팅법에 의해 제조되어진 Yttrium이 도핑된 ZnO 막의 특성 (Characterization of Yttrium Doped Zinc Oxide Thin Films Fabricated by Spin-coating Method)

  • 김현주;이동윤;송재성
    • 한국전기전자재료학회논문지
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    • 제19권5호
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    • pp.457-460
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    • 2006
  • Y doped zinc oxide (YZO) thin films were deposited on F doped $SnO_2$ (FTO) glass substrate by sol-gel method using the spin-coating system. A homogeneous and stable solution was prepared by dissolving acetate in the solution added diethanolamine as sol-gel stabilizer. YZO films were obtained after preheated on the hot-plate for 5minute before each coating; the number of coating was 3 times. After the coating of last step, annealing of YZO films performed at $450^{\circ}C$ for 30 minute. In order to confirming of a ultraviolet ray interruption and down-conversion effects, optical properties of YZO films, transmission spectrum and fluorescent spectrum were used. Also, for understanding the obtained results by experiment, the elestronic state of YZO was calculated using the density functional theory The results obtained by experiment were compared with calculated structure. The detail of electronic structure was obtained by the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method. The density of state and energy levels of dopant element were shown and discussed in association with optical properties.

유도결합플라즈마 표면 처리 및 SnO2 증착에 따른 폴리카보네이트 특성 연구 (Influence of Inductive Coupled Plasma Treatment and SnO2 Deposition on the Properties of Polycarbonate)

  • 엄태영;최동혁;손동일;엄태용;김대일
    • 한국전기전자재료학회논문지
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    • 제31권3호
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    • pp.156-159
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    • 2018
  • Inductively coupled plasma (ICP) treatment with argon and a mixture of argon and oxygen gases has been used to modify the surface of polycarbonate (PC) substrates. The results showed that the surface contact angle was inversely proportional to the plasma discharge power and that the mixed-gas plasma (gas flow 10:10 sccm, discharge power 60 W) decreased the surface contact angle as low as $18.3^{\circ}$, indicating a large increase in the surface hydrophilicity. In addition, $SnO_2$ thin films deposited on the PC substrate effectively enhanced the ICP plasma treatment, and could also enhance the usefulness of PC in the inner parts of automobiles.

Mo 패턴을 이용한 3-D 구조의 Cu2ZnSn (SxSe1-x)4 (CZTSSe) 박막형 태양전지 제작 (3-D Structured Cu2ZnSn (SxSe1-x)4 (CZTSSe) Thin Film Solar Cells by Mo Pattern using Photolithography)

  • 조은진;강명길;신형호;윤재호;문종하;김진혁
    • Current Photovoltaic Research
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    • 제5권1호
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    • pp.20-24
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    • 2017
  • Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.