• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.503-510
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• 2006

The measurement of specific gases is based on the reversible conductivity change of sensing materials in semiconductor type gas sensors. For an application as gas sensors of high sensitivity, porous $SnO_2$ films have been fabricated by anodizing of pure Sn foil in oxalic acid and characteristics of anodic tin oxide films have been investigated. Pore diameter and distribution were dependent on process conditions such as electrolyte concentration, applied voltage, anodizing temperature, and time. Characteristics of anodic films were explained with current density-time curves.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.667-671
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• 2013

We present an easy method of preparing two-dimensional (2D) periodic hollow tin oxide ($SnO_2$) hemisphere array gas sensors using polystyrene (PS) spheres as a template. The structures were fabricated by the sputter deposition of thin tin (Sn) metal over an array of PS spheres on a planar substrate followed by calcination at an elevated temperature to oxidize Sn to $SnO_2$ while removing the PS template cores. The $SnO_2$ hemisphere array structures were examined by scanning electron microscopy and X-ray diffraction. The structures were calcined at various temperatures and their sensing properties were examined with varying operation temperatures and concentrations of nitric oxide (NO) gas. Their gas-sensing properties were investigated by measuring the electrical resistances in air and the target gases. The measurements were conducted at different NO concentrations and substrate temperatures. A minimum detection limit of 30 ppb, showing a sensitivity of S = 1.6, was observed for NO gas at an operation temperature of $150^{\circ}C$ for a sample having an Sn metal layer thickness corresponding to 30 sec sputtering time and calcined at $600^{\circ}C$ for 2 hr in air. We proved that high porosity in a hollow $SnO_2$ hemisphere structure allows easy diffusion of the target gas molecules. The results confirm that a 2D hollow $SnO_2$ hemisphere array structure of micronmeter sizes can be a good structural morphology for high sensitivity gas sensors.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.69-76
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• 2003

For lithium secondary microbattery anode, the tin oxide thin films with Si addition (0, 2, 6, 10, 20 ㏖%) were prepared with R.F. magnetron sputtering at substrate temperature of 30$0^{\circ}C$ and Ar:O$_2$=7:3 atmosphere. As Si addition amount increased, Si-O bonding density increased and Sn-O bonding density decreased. The addition of optimum Si amount led the decrease of Sn oxidation state so that the irreversible capacity reduced and cycle characteristic enhanced during charge-discharge test. SnO$_2$films with 6 ㏖% Si had the highest reversible capacity of 700 mAh/g after 100 cycles.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.424-427
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• 2018

The effect of oxygen pressure in the synthesis of $SnO_2$ micro/nanocrystals through thermal evaporation of Sn powder was investigated. The thermal evaporation process was performed at $1000^{\circ}C$ for 1 hr under various oxygen pressures. The pressure of oxygen changed from 10 to 500 Torr. The morphology of $SnO_2$ crystals changed drastically with oxygen pressure. $SnO_2$ nanoparticles with an average diameter of 120 nm were formed at oxygen pressure lower than 10 Torr. $SnO_2$ nanowires were grown under an oxygen pressure of 100 Torr. The nanowires have diameters in the range of 100 ~ 500 nm and lengths of several tens of micrometers. As increasing the oxygen pressure to 500 Torr, the sizes of wires increased. A strong visible emission peak centered at about 500 ~ 600 nm was observed in the room temperature cathodoluminescence spectra of all the products.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.40-43
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• 1999

In order to investigate Sn substitution sites and interstitial O atoms in tin-doped indium oxide, molecular dynamics (MD) simulations were carried out. There are two kinds of cation sites in $In_2O_3$, namely b-site and d-site. NTP-MD simulations under the condition of 300 K and 0 GPa were performed with two kinds of cells substituted by Sn atoms at each site. The excess oxygen atom accompanied with Sn doping was also taken into consideration. According to the calculations of Sn potential energies in each site, it was revealed that Sn atoms were substituted for b-sites rather than for d-sites. It was also revealed that the interstitial excess oxygen atoms tend to be connected with the Sn atoms substituted for the d-sites Sn rather than for the b-site. There MD simulation results well agreed with the experimental results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.840-845
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• 2004

Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.505-510
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• 2012

A study of the recovery of tin and nickel from steel ball scraps for barrel plating was carried out through a physical treatment, a leaching treatment, hydrogen reduction and an electrolysis experiment. The recovery of the iron component was over 95% by the physical treatment. We obtained tin oxide in the form of metastannic acid ($SnO_2{\cdot}xH_2O$) with impurities of less than 5% from the leaching treatment. We also recovered the high-purity metallurgical tin at a rate that exceeded 99.9% by the electrolysis of crude tin obtained from the hydrogen reduction of metastannic acid.