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http://dx.doi.org/10.3740/MRSK.2013.23.12.667

Hollow SnO2 Hemisphere Arrays for Nitric Oxide Gas Sensing  

Hoang, Nhat Hieu (Department of Materials Science and Engineering, Chungnam National University)
Nguyen, Minh Vuong (Department of Materials Science and Engineering, Chungnam National University)
Kim, Dojin (Department of Materials Science and Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.23, no.12, 2013 , pp. 667-671 More about this Journal
Abstract
We present an easy method of preparing two-dimensional (2D) periodic hollow tin oxide ($SnO_2$) hemisphere array gas sensors using polystyrene (PS) spheres as a template. The structures were fabricated by the sputter deposition of thin tin (Sn) metal over an array of PS spheres on a planar substrate followed by calcination at an elevated temperature to oxidize Sn to $SnO_2$ while removing the PS template cores. The $SnO_2$ hemisphere array structures were examined by scanning electron microscopy and X-ray diffraction. The structures were calcined at various temperatures and their sensing properties were examined with varying operation temperatures and concentrations of nitric oxide (NO) gas. Their gas-sensing properties were investigated by measuring the electrical resistances in air and the target gases. The measurements were conducted at different NO concentrations and substrate temperatures. A minimum detection limit of 30 ppb, showing a sensitivity of S = 1.6, was observed for NO gas at an operation temperature of $150^{\circ}C$ for a sample having an Sn metal layer thickness corresponding to 30 sec sputtering time and calcined at $600^{\circ}C$ for 2 hr in air. We proved that high porosity in a hollow $SnO_2$ hemisphere structure allows easy diffusion of the target gas molecules. The results confirm that a 2D hollow $SnO_2$ hemisphere array structure of micronmeter sizes can be a good structural morphology for high sensitivity gas sensors.
Keywords
hollow hemispheres array; NO gas sensor; $SnO_2$; low detection limit;
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  • Reference
1 X. Han and L. P. Naeher, Environ. Int., 32, 106 (2006).   DOI   ScienceOn
2 D. E. Williams, Sens. Actuators, B, 57, 1 (1999).   DOI   ScienceOn
3 S. Basu and P. K. Basu, J. Sens., 2009, Article ID 861906 (2009).
4 G. X. Wang, J. S. Park, M. S. Park and X. L. Gou, Sens. Actuators, B, 131, 313 (2008).   DOI   ScienceOn
5 D. Wang, X. F. Chu and M. L. Gong, Sens. Actuators, B, 117, 183 (2006).   DOI   ScienceOn
6 C. Zheng, Y. Chu, Y. Dong, Y. Zhan and G. Wang, Mater. Lett., 59, 2018 (2005).   DOI   ScienceOn
7 T. Hyodo, S. Abe, Y. Shimizu and M. Egashira, Sens. Actuators, B, 93, 590 (2003).   DOI   ScienceOn
8 G. Xi, Y. He, Q. Zhang, H. Xiao, X. Wang and C. Wang, J. Phys. Chem. C, 112, 11645 (2008).   DOI   ScienceOn
9 R. G. Deshmukh, S. S. Badadhe, M. V. Vaishampayan and I. S. Mulla, Mater. Lett., 62, 4328 (2008).   DOI   ScienceOn
10 J. H. Lee, Sens. Actuators, B, 140, 319 (2009).   DOI   ScienceOn
11 X. Sun, J. Liu, and Y. Li, J. Chem. Eur., 12, 2039 (2006).   DOI   ScienceOn
12 T. Hyodo, K. Sasahara, Y. Shimizu and M. Egashira, Sens. Actuators, B, 106, 580 (2005).   DOI   ScienceOn
13 J. Zhang, S. Wang, Y. Wang, Y. Wang, B. Zhu, H. Xia, X. Guo, S. Zhang, W.Huang and S. Wu, Sens. Actuators, B, 135, 610 (2009).   DOI   ScienceOn
14 X. M. Yin, C. C. Li, M. Zhang, Q. Y. Hao, S. Liu, Q.H. Li, L. B. Chen and T. H. Wang, Nanotechnology, 20, 455503 (2009).   DOI   ScienceOn
15 H. N. Hieu, N. M. Vuong, H. Jung, D. M. Jang, D. Kim, H. Kim and S. -K. Hong, J. Mater. Chem., 22, 1127 (2012).   DOI   ScienceOn
16 N. D. Hoa, N. V. Quy and D. Kim, Sens. Actuators, B, 142, 253 (2009).   DOI   ScienceOn
17 N. Barsan and U. Weimar, J. Electroceram., 7, 143 (2001).   DOI   ScienceOn
18 C. D. Natale, F. Davide, G. Faglia and P. Nelli, Sens. Actuators, B, 23, 187 (1995).   DOI   ScienceOn
19 J. Santos, P. Serrini, B. O'Beirn and L. Manes, Sens. Actuators, B, 43, 154 (1997).   DOI   ScienceOn
20 M. Egashira, Y. Shimizu, Y. Takao and S. Sako, Sens. Actuators, B, 35, 62 (1996).   DOI   ScienceOn
21 N. M. Vuong, D. Kim, H. Jung, H. Kim, and S. K. Hong, J Mater Chem, 22, 6716 (2012).   DOI   ScienceOn
22 H. N. Hieu, N. Q. Dung, J. Kim, and D. Kim, Nanoscale, 5, 5530 (2013).   DOI   ScienceOn
23 G. -Y. Cha, A. H. Bui, W. -W. Baek, S. -T. Lee, D. -D.Lee and J. -S. Huh, Met. Mater. Int., 10, 149 (2004).   DOI   ScienceOn
24 L. He, Y. Jia, F. Meng, M. Li and J. Liu, J. Mater. Sci., 44, 4326 (2009).   DOI