• Applied Chemistry for Engineering
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• v.2 no.4
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• pp.411-420
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• 1991

The dehydrocyclization of n-heptane was studied over $Pt-Sn/{\gamma}-Al/_2O_3$ catalysts with varying Sn content in a fixed bed continuous flow reactor. The range of experimental conditions was at the temperature between 450 and $550^{\circ}C$, the pressure $20{\times}10^5-50{\times}10^5Pa$, the contact time 0.09 and 0.27 hr and the $H_2/H.C$. mole ratio 10. The conversion and selectivity of dehydrocyclization increased with increasing temperature, but decreased with increasing pressure. When we use Sn as a promoter, the selectivity of dehydrocyclization changesa a little, but the conversion was increased and the selectivity of isomerization increased a lot. The activation energy of dehydrocyclization of n-heptane was 34.5 kcal/mol over 0.6 wt % Pt-0.6 wt % $Sn/{\gamma}-Al_2O_3$.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.295-304
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• 1994

$Mo-V-O/SnO_2$(VM/Sn) and $SnO_2/Mo-V-O$(Sn/VM) catalysts have been prepared and characterized by XRD, BET, SEM and TPD of ammonia. The catalytic reaction of acrolein oxidation with these catalysts, in a continuous-flow fixed-bed reactor, showed that they had higher conversion of acrolein and higher yield of acrylic acid than those of Mo-V-O itself. The origin of the observed synergy studied by TPD, TPR and TPO is explained by the cooperation of $SnO_2$ and Mo-V-O at their interfaces where electrons flow from Mo-V-O phase to $SnO_2$ and $SnO_2$ produces spill-over oxygens, which, by being transported onto the surface of Mo-V-O, reoxidize the partially reduced active sites.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.388-393
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• 2018

Sublimation of $Bi_2O_3$-based materials is an important degradation issue for the long-term applications of many electronic devices. A series of $SnO_2$-doped $Bi_2O_3$ materials (SBO), was synthesized, densified, and then tested in air or strong reducing atmosphere. The $SnO_2$-doping effects and sublimation kinetics of the SBO materials were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and precise mass loss measurement. The results show that formation of $Bi_2Sn_2O_7$ phase greatly retards the mass loss of SBO. The SBO samples show a surface sublimation in an energy of $52.6kJ{\cdot}mol^{-1}$. However, the sublimation is also controlled by surface microstructure as the amount of vaporizing species (the Bi or gaseous Bi-oxides) is more than 0.1 mass%. The evaporation is retarded on the rough surface and the mechanism of surface evaporation is changed to diffusional control.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.5
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• pp.216-219
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• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.417-422
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• 2009

The problems associated with the synthesis, characterization and application of $SnO_2$-Au nanocomposites for the optimization of conductometric gas sensors have been discussed in this report. Nanocomposites have been synthesized on the surface of $SnO_2$ films using successive ionic layer deposition(SILD) method. It has been shown that the proposed approach to surface modification of metal oxide films is an excellent method for the optimization of the operating characteristics of $SnO_2$-based gas sensors, being developed for the detection of reducing gases as well as ozone.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.250-250
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• 2015

사람의 후각으로 감지할 수 없는 독성, 폭발성 가스로 인한 사고 발생률이 높아지면서 고감도의 가스 센서 필요성이 증가 되고 있다. 본 연구에서는 안정적인 가스 감지를 위해 물리기상증착의 다양한 공정 조건을 변화시켜 다공성 나노구조의 $SnO_2$ 가스 검지 전극층을 제작하였다. SEM 분석을 통하여 $SnO_2$ 가스 검지층이 다공성 나노 구조를 지님을 확인하였고, TEM 분석을 통하여 $SnO_2$ 입자간의 안정적인 접합을 확인하였다. 또한 다공성 나노 구조의 $SnO_2$를 가스 검지층으로 사용하여 가스센서를 제작하였고, 가스 농도에 따른 감도 변화를 확인 할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1041-1046
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• 1999

(Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스와 소결조제로서 ($B_2$$O_3$.Li$_2$O)의 첨가에 따른 마이크로파 유전특성 및 미세구조에 미치는 영향에 대하여 연구하였다. 1.0 mol.% $Sb_2$O(sub)5를 첨가하고 130$0^{\circ}C$에서 5시간 소결한 (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스의 경우 ($B_2$$O_3$.Li$_2$O)첨가량 증가에 따라 치밀화 및 결정립 성장에 의해 유전상수와 Q.f값은 증가하여 첨가량이 0.35wt.%에서 최대값인 38과 59,000을 각각 나타내었으며, 0.50wt.% 이상 첨가한 경우에서는 제 2상의 생성으로 인하여 감소하였다. 1.0 mol% Sb$_2$O(sub)5와 0.35wt.% ($B_2$$O_3$.$Li_2$O)를 첨가한 (Zr(sub)0.8Sn(sub)0.2)TiO$_4$세라믹스를 125$0^{\circ}C$와 135$0^{\circ}C$에서 5시간 소결한 경우에는 각각 미반응 TiO$_2$의 존재와 과대입자성장에 의한 결정립내기공의 생성으로 인하여 마이크로파 유전특성은 저하되었다.

• Journal of Sensor Science and Technology
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• v.30 no.3
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• pp.175-180
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• 2021

In this paper, methods for improving the sensitivity of gas sensors to NO₂ gas are presented. A gas sensor was fabricated based on an SnO₂ nanowire network using the vapor-phase-growth method. In the gas sensor, the Au electrode was replaced with a fluorinedoped tin oxide (FTO) electrode, to achieve high sensitivity at low temperatures and concentrations. The gas sensor with the FTO electrode was more sensitive to NO₂ gas than the sensor with the Au electrode: notably, both sensors were based on typical SnO₂ nanowire network. When the Au electrode was replaced by the FTO electrode, the sensitivity improved, as the contact resistance decreased and the surface-to-volume ratio increased. The morphological features of the fabricated gas sensor were characterized in detail via field-emission scanning electron microscopy and X-ray diffraction analysis.

• Transactions on Semiconductor Engineering
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• v.1 no.1
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• pp.9-13
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• 2023

An AlGaN/GaN heterojunction-based hydrogen sensor with SnO₂ nanoparticles/Pd catalyst layer was fabricated for room-temperature hydrogen detection. The fabricated sensor exhibited unstable drift in standby current when it was operated at room temperature. The instability in the sensing signal was dramatically improved when the sensor was operated under UV illumination.