• 제목/요약/키워드: SnO2

검색결과 382건 처리시간 0.029초

SnO2-TiO2-V2O5계의 노랑안료 합성 (Synthesis of SnO2-TiO2-V2O5 System Yellow Pigment)

  • 주인돈;황동하;이현수;박주석;이병하
    • 한국세라믹학회지
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    • 제46권6호
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    • pp.639-642
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    • 2009
  • The research was performed to find out the optimum firing condition for the $SnO_2-TiO_2-V_2O_5$ system yellow pigment. The pigment based on $SnO_2-V_2O_5$ system showed very intense yellow color and it was used widely in ceramics industry. Synthesized pigment, with partial substitutions of $SnO_2\;by\;TiO_2$, was fired at $1300{^{\circ}C}$ soaking 1h and it showed bright yellow color. $SnO_2-TiO_2-V_2O_5$ system was very more intensive changes in yellow color by colorimetric value $b^*$ than $SnO_2-V_2O_5$ system. Synthesized yellow pigments were characterized by X-ray diffraction (XRD), FT-IR, and UV-vis spectroscopy. The best composition for yellow pigment was 93:7:0.5(mole%) for $SnO_2-V_2O_5-TiO_2$. The measurement of CIE $L^*a^*b^*$ of pigment was $L^*(78.82),\;a^*(-4.88)\;and\;b^*$(59.25).

SiO2, SnO2 코팅된 청색 CoAl2O4 안료의 색상, 물성 평가 연구 (Coloration and Chemical Stability of SiO2 and SnO2 Coated Blue CoAl2O4 Pigment)

  • 윤지연;유리;피재환;김유진
    • 한국분말재료학회지
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    • 제21권5호
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    • pp.377-381
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    • 2014
  • This work describes the coloration, chemical stability of $SiO_2$ and $SnO_2$-coated blue $CoAl_2O_4$ pigment. The $CoAl_2O_4$, raw materials, were synthesized by a co-precipitation method and coated with silica ($SiO_2$) and tin oxide ($SnO_2$) using sol-gel method, respectively. To study phase and coloration of $CoAl_2O_4$, we prepared nano sized $CoAl_2O_4$ pigments which were coated $SiO_2$ and $SnO_2$ using tetraethylorthosilicate, $Na_2SiO_3$ and $Na_2SiO_3$ as a coating material. To determine the stability of the coated samples and their colloidal solutions under acidic and basic conditions, colloidal nanoparticle solutions with various pH values were prepared and monitored over time. Blue $CoAl_2O_4$ solutions were tuned yellow color under all acidic/basic conditions. On the other hand, the chemical stability of $SiO_2$ and $SnO_2$-coated $CoAl_2O_4$ solution were improved when all samples pH values, respectively. Phase stability under acidic/basic condition of the core-shell type $CoAl_2O_4$ powders were characterized by transmission electron microscope, X-ray diffraction, CIE $L^*a^*b^*$ color parameter measurements.

열처리 온도에 따른 SnO2/Cu(Ni)/SnO2 다층구조 투명전극의 전기·광학적 특성 (A Study on the Electrical and Optical Properties of SnO2/Cu(Ni)/SnO2 Multi-Layer Structures Transparent Electrode According to Annealing Temperature)

  • 정지원;공헌;이현용
    • 한국전기전자재료학회논문지
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    • 제32권2호
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    • pp.134-140
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    • 2019
  • Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

SnO2 박막의 열처리 온도에 따른 CO2가스 반응성 (CO2 Gas Responsibility of SnO5 Thin Film Depending on the Annealing Temperature)

  • 오데레사
    • 반도체디스플레이기술학회지
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    • 제16권4호
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    • pp.75-78
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    • 2017
  • The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

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SnO2:Cu 나노 구조물의 CH4, CH3CH2CH3 가스 감응 특성 (Gas Sensing Behaviors of SnO2:Cu Nanostructures for CH4, CH3CH2CH3 Gas)

  • 이지영;유윤식;유일
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.974-978
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    • 2012
  • The effect of Cu coating on the sensing properties of nano $SnO_2:Cu$ based sensors for the $CH_4$, $CH_3CH_2CH_3$ gas was studied. This work was focussed on investigating the change of sensitivity of nano $SnO_2:Cu$ based sensors for $CH_4$, $CH_3CH_2CH_3$ gas by Cu coating. Nano sized $SnO_2$ powders were prepared by solution reduction method using stannous chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_2$) and NaOH and subsequent heat treatment. XRD patterns showed that nano $SnO_2$ powders with rutile structure were grown with (110), (101), (211) dominant peak. The particle size of nano $SnO_2:Cu$ powders at 8 wt% Cu was about 50 nm. $SnO_2$ particles were found to contain many pores, according to SEM analysis. The sensitivity of nano $SnO_2:Cu$ based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The sensitivity for both $CH_4$ and $CH_3CH_2CH_3$ gases was improved by Cu coating on the nano $SnO_2$ surface. The response time and recovery time of the $SnO_2:Cu$ gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 18~20 seconds, and 13~15 seconds, respectively.

전자빔 표면 조사에 따른 SnO2/Ag/SnO2 박막의 특성 연구 (The Effect of electron beam surface irradiation on the properties of SnO2/Ag/SnO2 thin films)

  • 장진규;김현진;최재욱;이연학;공영민;허성보;김유성;김대일
    • 한국표면공학회지
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    • 제54권6호
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    • pp.302-306
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    • 2021
  • SnO2 30/Ag 15/SnO2 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10-3 Ω-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO2 30/Ag 15/SnO2 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

NO2 감지용 SnO2 후막소자의 제작 및 특성 (Fabrication and Characteristics of SnO2 Thick Film Devices for Detection of NO2)

  • 손종락;한종수
    • 공업화학
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    • 제8권2호
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    • pp.332-338
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    • 1997
  • $NO_2$기체의 감지를 위한 sensor의 원료물질로 $SnO_2$를 사용하였으며 $SnCl_4$ 용액을 암모니아수로 침전시킨 후 공기중에 하소하여 $SnO_2$를 제조하였다. $SnO_2$의 특성을 XRD 및 IR로 연구하였으며 스크린-프린팅법으로 $SnO_2$후막소자를 제작하였다. 하소온도가 높을수록 $SnO_2$의 입자의 크기는 결정의 성장으로 증가하였다. $1000^{\circ}C$에서 하소된 $SnO_2$분말을 가지고 만든 소자를 $700^{\circ}C$에서 열처리하여 제작된 $SnO_2$소자는 동작온도 $250^{\circ}C$에서 $NO_2$기체에 대한 우수한 감지특성과 선택성을 나타내었다.

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P2O5-SnO2계 유리에서 P2O5를 B2O3로 치환첨가 시 구조와 물성에 미치는 영향 (Effects of Substituting B2O3 for P2O5 on the Structure and Properties of P2O5-SnO2 Glass Systems)

  • 최병현;지미정;안용태;고영수;이영훈
    • 한국세라믹학회지
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    • 제45권8호
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    • pp.459-463
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    • 2008
  • $P_2O_5-SnO_2$ system $0.5SnO_2-xP_2O_5-(0.5-x)B_2O_3$(x=0.1, 0.2, 0.3, 0.4, 0.5) glasses have been prepared for Pb-free low temperature glass frit. A investigation about the effect of $B_2O_3$ substitution on properties of $P_2O_5$ glasses, including glass structure properties, thermal properties, and mechanical properties was presented. Substance that is responsible for in moisture absorption existing circumstances supposes by phosphate, and excess moisture tolerance that state funeral's structure is improved breaking does not affect in state funeral bond that only most single bond remains, and can know that does not suffer big impact in boric oxide anomaly present state. This phenomenon estimates that connect with structure change. It is thought according to link this result the phosphoric acid happened structural change. $B_2O_3$ displacement quantity 0.3 mole put out $BO_4$ structures, but above 0.3 mole it changed with the case $BO_3$ structure which it displaces.

D-space-controlled graphene oxide hybrid membrane-loaded SnO2 nanosheets for selective H2 detection

  • Jung, Ji-Won;Jang, Ji-Soo
    • 센서학회지
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    • 제30권6호
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    • pp.376-380
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    • 2021
  • The accurate detection of hydrogen gas molecules is considered to be important for industrial safety. However, the selective detection of the gas using semiconductive metal oxides (SMOs)-based sensors is challenging. Here, we describe the fabrication of H2 sensors in which a nanocellulose/graphene oxide (GO) hybrid membrane is attached to SnO2 nanosheets (NSs). One-dimensional (1D) nanocellulose fibrils are attached to the surface of GO NSs (GONC membrane) by mixing GO and nanocellulose in a solution. The as-prepared GONC membrane is employed as a sacrificial template for SnO2 NSs as well as a molecular sieving membrane for selective H2 filtration. The combination of GONC membrane and SnO2 NSs showed substantial selectivity to hydrogen gas (Rair / Rgas > 10 @ 0.8 % H2, 100 ℃) with noise level responses to interfering gases (H2S, CO, CH3COCH3, C2H5OH, and NO2). These remarkable sensing results are attributed mainly to the molecular sieving effect of the GONC membrane. These results can facilitate the development of a highly selective H2 detector using SMO sensors.

졸-겔 공법으로 제작된 SnO2 박막 트랜지스터의 광전기적 특성 (Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors)

  • 이창민;장재원
    • 센서학회지
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    • 제29권5호
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    • pp.328-331
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    • 2020
  • In this study, a highly crystalline SnO2 thin film was formed using a sol-gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W-1, and photosensitivity of 4.67 × 102.