• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.9-14
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• 2017

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.187-190
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• 2010

$Sn_{0.99}{^{57}Fe}_{0.01}O_2$ prepared by a sol-gel method, and studied by x-ray diffractometer, vibrating magnetometer, Superconducting quantum interference devices and M$\ddot{o}$ssbauer spectroscopy. the crystal structure were found to be a rutile tetragonal structure with space group $P4_2$/mnm, and oxygen deficiency are 5.6 % by Rietveld refinement. magnetization value were $M_s=1.95{\times}10^{-2}{\mu}_B/Fe$ at room temperature, and Curri-weiss temperature were and ${\theta}_{cw}$ = 18 k, measurement of VSM and SQUID, respectively. Mssbauer spectra of $Sn_{0.99}{^{57}Fe}_{0.01}O_2$ have been Sextet taken at various temperatures ranging from 4.2 K to RT, and isomer shift value $\delta$ = 0.18~0.36 mm/s of $^{57}Fe$ ion site all of the temperature range the state shows ferric.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.9-12
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• 2004

The effect of x wt% CuO-y wt% $V_2O_5$ content on the microwave properties of $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ (PCFNS) ceramics was investigated. In order to decrease the sintering temperature and use as a Low Temperature co-firing Ceramics (LTCC), CuO-$V_2O_5$ are added in the PCFNS. The bulk density, dielectric constant (${\varepsilon}_r$) and quality factor(Q${\cdot}f_0$) increased with increase in CuO content within a limited value. The microwave properties were degraded with increases in $V_2O_5$ content. The temperature coefficient of the resonant frequency (${\tau}_f$) of PCFNS was shifted to positive value abruptly with increasing the $V_2O_5$ content, while the ${\tau}_f$ was slightly shifted to positive value with increasing the CuO content. The optimized microwave properties, ${\varepsilon}_r$ = 88, Q${\cdot}f_0$ = 6100 (GHz), and ${\tau}_f$ = 18 ppm/$^{\circ}C$, were obtained in $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ with 0.2wt% CuO 0.05 wt% $V_2O_5$ and sintered at $1000^{\circ}C$ for 3 h. The relationship between the microstructure and microwave dielectric properties of ceramics was studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM)

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1912-1920
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• 2011

The $SnO_2$ with a particle size of about 300 nm instead of Ni is used in this study to overcome rapid catalytic deactivation by the formation of a $NiAl_2O_4$ spinal structure on the conventional Ni/${\gamma}$-$Al_2O_3$ catalyst and simultaneously impregnated the catalyst with potassium (K). The $SnO_2-K_2O$ impregnated Zeolite Y catalyst ($SnO_2-K_2O$/ZY) exhibited significantly higher ethanol reforming reactivity that that achieved with $SnO_2$ 100 and $SnO_2$ 30 wt %/ZY catalysts. The main products from ethanol steam reforming (ESR) over the $SnO_2$-$K_2O$/ZY catalyst were $H_2$, $CO_2$, and $CH_4$, with no evidence of any CO molecule formation. The $H_2$ production and ethanol conversion were maximized at 89% and 100%, respectively, over $SnO_2$ 30 wt %-$K_2O$ 3.0 wt %/ZY at 600 $^{\circ}C$ for 1 h at a $CH_3CH_2OH:H_2O$ ratio of 1:1 and a gas hourly space velocity (GHSV) of 12,700 $h^{-1}$. No catalytic deactivation occurred for up to 73 h. This result is attributable to the easier and weaker of reduction of Sn components and acidities over $SnO_2-K_2O$/ZY catalyst, respectively, than those of Ni/${\gamma}$-$Al_2O_3$ catalysts.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.438-443
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• 2008

SnO nanosheets were prepared at room temperature through a reaction between an aqueous solution of $SnCl_2$, $N_2F_4$, and NaOH and were converted into $SnO_2$ nanosheets without a morphological change. The SnO nanosheets were formed through a dissolution-recrystallization mechanism. Uniform and well-dispersed SnO nanosheets with the round-shape morphology were attained when the solution was treated by ultrasonic sound immediately after the addition of NaOH. The $SnO_2$ nanosheets prepared by means of solution reduction under the ultrasonic treatment, and subsequent oxidation at $600^{\circ}C$ showed a high level of gas sensitivity to $C_2H_5OH$ and $CH_3COCH_3$.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.359-362
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• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.