• 제목/요약/키워드: SnO$_2$

검색결과 1,498건 처리시간 0.032초

고품질 실리콘 박막을 이용한 저가 고효율 실리콘 박막 및 a-Si:H/c-Si 이종접합 태양전지 개발 (Development of low cost and high efficiency silicon thin-film and a-Si:H/c-Si hetero-junction solar cells using low temperature silicon thin-films)

  • 이정철;임충현;안세진;윤재호;김석기;김동섭;양수미;강희복;이보영;이준신;송진수;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2005년도 춘계학술대회
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    • pp.113-116
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    • 2005
  • In this paper, silicon thin-film solar cells(Si- TFSC) and a-Si/c-Si heterojunction solar cells(HJ-cell) are investigated. The Si-TFSC was prepared on glass substrate by depositing $1-3{\mu}m$ thin-film silicons by glow discharge method. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells on textured ZnO:A1 TCO (transparent conducting oxide) showed improved Jsc in top and bottom cells than that on $SnO_2:F$ TCO. This enhancement of jsc resulted from improved light trapping effect by front textured ZnO:A1. The a-Si/c-Si HJ-cells with simple structure without high efficiency features are suffering from low Voc and Jsc. The improvement of front nip and back interface properties by adopting high quality silicon-films at low temperature should be done both for increasing device performances and production cost.

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IGZO 박막트렌지스터의 열처리 조건에 따른 Ti/Au 전극 연구

  • 이민정;최지혁;강지연;명재민
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.54.1-54.1
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    • 2010
  • 산화물 기반의 TFT는 유리, 금속, 플라스틱 등 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작이 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 많은 연구가 이루어지고 있다. 현재 TFT 물질로 많이 연구되고 있는 산화물은 ZnO (3.4 eV)나 InOx (3.6 eV), GaOx (4.9 eV), SnOx(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있으며, 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, 트렌지스터의 안정성이 떨어지는 것으로 보고 되고 있다. 그러나 IGZO 물질의 경우 결정학적으로 비정질이며 상온 및 저온에서 대면적으로 제작이 가능하고, 높은 전자 이동도의 특성을 가지고 있는 장점 때문에 최근 차세대 산화물 트렌지스터로 각광받고 있다. IGZO TFT 소자의 경우 Ag, Au, In, Pt, Ti, ITO 등 다양한 전극 물질이 사용되고 있는데, 이들 중 active channel과 ohmic contact을 이루는 Al, Ti, Ag의 적용을 통해 향상된 성능을 얻을 수 있다. 하지만 이들 전극 재료는 TFT 소자 제작시 필수적인 열처리 공정에 노출되면서 active channel 과 전극 사이 계면에 문제점을 야기할 수 있다. 특히, Ti의 경우 산화가 잘되기 때문에 전극계면에 TiO2를 형성하여 contact resistance의 큰 영향을 미치는 것으로 보고 되고 있다. 본 연구에서는 ohmic 전극재료인 Ti 또는 Ti/Au를 적용하여 TFT 소자 제작 및 특성에 대한 평가를 진행했으며, 열처리에 따른 전극과 IGZO 계면 사이의 미세구조와 전기적인 특성간의 상관관계를 연구하였다. 이를 통해, 소자 제작 공정을 최적화하고 신뢰성 있는 소자 특성을 얻을 수 있었다.

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단결정 Y1.5Ba2Cu3O7-y 벌크 초전도체의 냉각효율에 대한 인공 구멍의 효과 (Effects of artificial holes on the cooling efficiency of single grain Y1.5Ba2Cu3O7-y bulk superconductors)

  • 김광모;박순동;전병혁;고태국;김찬중
    • 한국초전도ㆍ저온공학회논문지
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    • 제14권3호
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    • pp.1-4
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    • 2012
  • Effects of artificial holes on the cooling efficiency of single grain YBCO bulk superconductors were studied. Single grain YBCO bulk superconductors without artificial holes, with six 2.4 mm holes and six holes filled with Bi-Pb-Cd-Sn metal solder were fabricated by a top-seeded melt growth process for powder compacts with/without holes. Simulation for the cooling rate to a liquid nitrogen temperature (77 K) of YBCO samples was carried out using a finite element method (FEM) and the results are compared with the actual cooling rates of samples in liquid nitrogen. The simulated cooling times for the YBCO sample without holes, with six holes and with six holes filled with the metal solder were 80, 47 and 75 sec. respectively, which are similar to the actual cooling times of 84, 52 and 78 sec. estimated for the same samples cooled in liquid nitrogen. The shorter cooling time of the sample with artificial holes are attributed to the increased surface areas associated with the presence of artificial holes. The metal filling into the holes did not give any remarkable effect on the cooling efficiency.

토양(土壤)에서 분리(分離)한 Streptomyces sp. s-45의 효소학적(酵素學的) 성질(性質)에 관한 연구(硏究) (Studies on the Enzymatical Properties of Streptomyces sp. S-45 Isolated from Soil)

  • 김영일;김용웅;김광식
    • 한국토양비료학회지
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    • 제21권2호
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    • pp.129-134
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    • 1988
  • 토양(土壤)으로부터 분리(分離)한 Streptomyces sp. S-45 균주(菌株)의 효소학적(酵素學的) 성질(性質)을 검토(檢討)한 결과(結果)는 다음과 같다. 1. 분리균(分離菌) Streptomyces sp. S-45의 Chitinase activity는 $3.01({\mu}/m{\ell})$이고 ${\beta}$-1.3-Glucanase activity는 $2.49({\mu}/m{\ell})$이었다. 2. 탄소원(炭素原)으로서 Colloidal chitin 0.7%, Glucose 0.3%, 질소원(窒素原)으로서 Asparagine 0.5%, Peptone 0.2% 존재(存在)가 효소생산(酵素生産)에 효과적(效果的)이었다. 3. 최적(最適) 효소생성(酵素生成) 조건(條件)으로 pH 7.0, $30^{\circ}C$에서 6일간(日間) 진탕배양시(培養時) 최고(最高)의 효소생성(酵素生成)을 나타내었다. 4. 효소(酵素)의 활성(活性)에 미치는 최적(最適) 작용조건(作用條件)은 pH 6.5~7.0, 온도(溫度)는 $45{\sim}50^{\circ}C$였다. 5. 본(本) 효소(酵素)는 pH6.0~7.0에서 안정성(安定性)이 가장 높았고, $80^{\circ}C$로 10분(分) 처리시(處理時) Chitinase는 10%, ${\beta}$-1.3-Glucanase는 12%로 잔존활성(殘存活性)이 감소(減少)하였다. 6. 금속(金屬)이온에 대한 효소(酵素)의 영향(影響)은 $Co^{{+}{+}}$, $Cu^{{+}{+}}$, $Mn^{{+}{+}}$, $Al^{{+}{+}{+}}$$10^{-2}M$$Sn^{{+}{+}}\;10^{-3}M$에서 활성(活性)이 증대(增大)하였고, $Ag^{{+}{+}}$, $Hg^{{+}{+}}$는 현저(顯著)한 저해작용을 하였다.

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Barrier층을 갖는 Soda lime glass 기판위에 증착된 ITO박막의 Annealing 조건에 따른 영향 (Effects of Annealing Condition on Properties of ITO Thin Films Deposited on Soda Lime Glass having Barrier Layers)

  • 이정민;최병현;지미정;박정호;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.66-66
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    • 2008
  • Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

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폐 신티그래피용 $^{99m}TC$ 표지 미소구형인 혈청 알부민의 제조에 관한 연구 (Studies on the Preparation of $^{99m}TC$ Labelled Human Albumin Microsphere for Lung Scintigraphy)

  • 박경배;오옥두;김재록
    • 대한핵의학회지
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    • 제23권1호
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    • pp.63-69
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    • 1989
  • In order to develop technetium-99m-labelled human albumin microsphere (HAM) for lung scintigraphy, various experimemts such as preparation and fractionation of HAM, establishment of optimal labelling conditions, determination of radiochemical purity, stability test and biodistribution of $^{99m}Tc-HAM$ were carried out. HAM was prepared from the suspension of 1ml aqueous human serum albumin (25%) in 130 ml of olive oil at $130\sim135^{\circ}$ with vigorous stirring. The resulting HAM was fractionated with microsieve to get the desired particle size $(15\sim50\mu)$ and autoclaved for sterilizaiton. The HAM particles were treated with stannous chloride and the pH of the suspension was adjusted to $3.0\sim3.5$ with phosphate buffer. After freeze-drying the contents of single reaction vial containing 5 mg of HAM and 0.2 mg of $SnCl_2$ it was reacted with $Na^{99m}TcO_4$. The labelling yield was higher than 99.5% and the stability of $^{99m}Tc-HAM$ was high enough to maintain 99.1% of radiochemical purity up to 24 hours. Lung and liver uptake in mice was found to be 94% and 0.9%, respectively. Excellent rabbit and human lung scans were also obtained.

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DC Magnetron Sputtering에 의한 ATO 박막의 제조(II)전기적 특성 (Preparation of ATO Thin Films by DC Magnetron Sputtering (II)Electrical Properties)

  • 윤천;이혜용;정윤중;이경희
    • 한국세라믹학회지
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    • 제33권5호
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    • pp.514-518
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    • 1996
  • Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

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Temperature Calibration of a Specimen-heating Holder for Transmission Electron Microscopy

  • Kim, Tae-Hoon;Bae, Jee-Hwan;Lee, Jae-Wook;Shin, Keesam;Lee, Joon-Hwan;Kim, Mi-Yang;Yang, Cheol-Woong
    • Applied Microscopy
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    • 제45권2호
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    • pp.95-100
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    • 2015
  • The in-situ heating transmission electron microscopy experiment allows us to observe the time- and temperature-dependent dynamic processes in nanoscale materials by examining the same specimen. The temperature, which is a major experimental parameter, must be measured accurately during in-situ heating experiments. Therefore, calibrating the thermocouple readout of the heating holder prior to the experiment is essential. The calibration can be performed using reference materials whose phase-transformation (melting, oxidation, reduction, etc.) temperatures are well-established. In this study, the calibration experiment was performed with four reference materials, i.e., pure Sn, Al-95 wt%Zn eutectic alloy, NiO/carbon nanotube composite, and pure Al, and the calibration curve and formula were obtained. The thermocouple readout of the holder used in this study provided a reliable temperature value with a relative error of <4%.

안정성이 개선된 고집적 가스센서 어레이 열해석 (Thermal Analysis of Highly Integrated Gas Sensor Array with Advanced Thermal Stability Properties)

  • 정완영;임준우;이덕동
    • 대한전자공학회논문지SD
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    • 제40권12호
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    • pp.17-23
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    • 2003
  • 서로 다른 동작온도를 가지는 12개의 감지막으로 구성된 고집적형 센서어레이(다이아프램의 크기가 3×5㎟가 설계되고 열동작의 관점에서 최적화되었다. 이 센서어레이는 에칭된 실리콘기판과 접합된 얇은 유리기판 위의 중앙에 하나의 히터가 위치하고 양쪽에 동작온도가 다른 감지박막이 위치하도록 설계됨으로써 개별 마이크로센서 보다 동시에 훨씬 많은 정보를 얻을 수 있는 장점을 가지고 있다. 제안된 마이크로센서 어레이는 다이아프램의 중앙에 하나의 히터만을 가지는 구조를 하고 있기 때문에 고집적 어레이구조를 실현하면서도, 히터를 중심으로 감지박막의 동작온도에 따라 다양한 감지특정을 얻을 수 있다. 또 히터 양쪽의 감지박막의 종류를 다르게 함으로써 다이아프램위의 전 감지막이 모두 다른 감지특성을 가지게 되어 고집적 센서어레이를 구현하기 용이한 구조로 밝혀졌다.

전기주석도금강판의 표면특성이 투피스캔 제관공정의 아이어닝 가공시 마찰특성에 미치는 영향 (Effects of surface characteristics of electrolytic tinplate on frictional properties during ironing operaration of 2-piece can-making process)

  • 김태엽
    • 한국표면공학회지
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    • 제30권3호
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    • pp.191-201
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    • 1997
  • Non-passivated electrolytic tinplates withour conventinal chemical treatment self-oxidize in ambient atmosphere to from yellow stain on the outermost surface during the long-term storage. The degree of yellowness of the stain increased linerly with the oxide thickness due to the interfeefence color of the $SnO_2$ Even though the thickness of the oxide layer was very thin, less than 100$\AA$ , it exerts an undesirable influence on the can-making processes, particularly the stripping behavior after ironing. Investigations were carried out on the morphologies of the coating layer, the changes in oxide thickness during successive can-making processes and the averge friction coefficients with the different oxide thinkness. These oxide layers were broken up and distributed within the bulk tin coating during the ironing process. This redistribution of the oxide layer prvented smooth pressing-aside of the tin coating layer, resulting in an increase in the ironing friction coefficient. As the friction was increased, the residual stress along the can wall thinkness(i.e., the hoop stress) was also increased. Due to both the oxibe layer accumulation, which increased the friction coefficient, and the hoop stress, can stripping efficiency without roll-back is reduced.

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