• Proceedings of the KWS Conference
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• 2006.10a
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• pp.199-201
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• 2006

The wetting balance test was carried out to compare the wettability of Sn-Xwt%Cu($0{\sim}3$wt%) solders. And, IMCs which were formed at interface between solders and substrates were investigated by using XRD(x-ray diffractometer), SEM(scanning electron microscope) and EDS(energy dispersive spectroscope). The value of ${\gamma}_[fl}$ and(${\gamma}_{fs}-{\gamma}_{ls}$) had a tendency to increase with increasing wetting temperature. The activation energy that was calculated between the bare Cu substrate and flux was increased in the following order Sn-0.7wt%Cu(68.42 kJ/mol);Sn-3.0wt%Cu(72.66 kJ/mol);100wt%Sn solder(94.53 kJ/mol).

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.345-350
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• 2014

The surface oxidation mechanism of lead-free solder alloys has been investigated with multiple reflow using X-ray photoelectron spectroscopy. It was found that the solder surface of Sn-Ag-Cu-In solder alloy is surrounded by a thin $InO_x$ layer after reflow process; this coating protects the metallic surface from thermal oxidation. Based on this result, we have performed a wetting balance test at various temperatures. The Sn-Ag-Cu-In solder alloy shows characteristics of both thermal oxidation and wetting balance better than those of Sn-Ag-Cu solder alloy. Therefore, Sn-Ag-Cu-In solder alloy is a good candidate to solve the two problems of easy oxidation and low wettability, which are the most critical problems of Pb-free solders.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.63-67
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• 2003

Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.126-129
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• 2002

This article presents that the affecting factors to solderability and initial reliability. It was discussed that effect of the solder ball hardness and composition on the reliability of solder joints. In this study, lead free solder alloys with compositions of Sn-Cu, Sn-Ag, Sn-Ag-Cu, Sn-Ag-Cu-Bi were applied to the $\muBGA$ packages. As a result of experiments, the high degree of hardness with the displacement of 0.22mm was obtained Sn-2.0Ag-0.7Cu-3.0Bi. The shear strength of lead free solder was higher than of Sn-37Pb solder, and it was increased about 150% in Sn-2.0Ag-0.7Cu-3.0Bi.

• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.288-294
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• 1999

In the flip chip interconnection using solder bump, the Under Bump Metallurgy (UBM) is required to perform multiple functions in its conversion of an aluminum bond pad to a solderable surface. In this study, various UBM systems such as $Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 5\mu\textrm{m}, Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}, al 1\mu\textrm{m}/Ni 0.2\mu\textrm{m} / Cu 1\mu\textrm{m} and Al 1\mu\textrm{m}/Pd 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}$ for flip chip interconnection using the low melting point eutectic 63Sn-37Pb solder were investigated and compared to their metallurgical properties. $100\mu\textrm{m}$ size bumps were prepared for using an electroplating process. The effects of the number of reflows and aging time on the growth of intermetallic compounds(IMC) were investigated. $Cu_6Sn_5$ and $Cu_3Sn$ IMC were abserved after aging treatment in the UBM system with thick coper $(Al 1\mu\textrm{m}/Ti 0.2\mu\textrm{m}/Cu 5\mu\textrm{m})$. However only the $Cu_6Sn_5$ was detected in the UBM system with $1\mu\textrm{m}$ thick copper even after 2 reflow and 7 day aging at $150^{\circ}C$. Complete Cu consumption by Cu-Sn IMC growth gives rise to a direct contact between solder inner layer such as Ti, Ni and Pd, and hence to possibly cause reactions between two of them. In this study, however, only for the Pd case, IMC of PdSn. was observed by Cu consumption. UBM interfacial reactions with s이der affected the adhesion strength ot s이der balls after s이der reflow and annealing treatment.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.81-88
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• 2019

In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.974-978
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• 2012

The effect of Cu coating on the sensing properties of nano $SnO_2:Cu$ based sensors for the $CH_4$, $CH_3CH_2CH_3$ gas was studied. This work was focussed on investigating the change of sensitivity of nano $SnO_2:Cu$ based sensors for $CH_4$, $CH_3CH_2CH_3$ gas by Cu coating. Nano sized $SnO_2$ powders were prepared by solution reduction method using stannous chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_2$) and NaOH and subsequent heat treatment. XRD patterns showed that nano $SnO_2$ powders with rutile structure were grown with (110), (101), (211) dominant peak. The particle size of nano $SnO_2:Cu$ powders at 8 wt% Cu was about 50 nm. $SnO_2$ particles were found to contain many pores, according to SEM analysis. The sensitivity of nano $SnO_2:Cu$ based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The sensitivity for both $CH_4$ and $CH_3CH_2CH_3$ gases was improved by Cu coating on the nano $SnO_2$ surface. The response time and recovery time of the $SnO_2:Cu$ gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 18~20 seconds, and 13~15 seconds, respectively.