• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 국제표면실장 및 인쇄회로기판 생산기자재전:전자패키지기술세미나
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• pp.37-59
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• 2004

In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

• Korean Chemical Engineering Research
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• 제48권3호
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• pp.316-321
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• 2010

본 연구에서는 고압조건에서 $SO_2$를 원소 황으로 전환하기 위한 촉매환원반응이 수행되었다. $SO_2$ 환원을 위한 촉매로 Sn-Zr계 금속복합산화물 촉매를 사용하였으며, 환원제로 CO가 사용되었다. 촉매환원반응성을 조사하기 위하여 반응온도, 반응물의 몰비([CO]/[$SO_2$]), 공간속도에 따른 $SO_2$ 전화율과 원소 황 수율 그리고 COS의 선택도를 상압조건과 20기압조건에서 비교되었다. 상압조건에서 $SO_2$ 전화율은 반응온도가 증가될수록 함께 증가되었으며, $CO/SO_2$ 몰비가 높을수록 증가되었다. 또한 $SO_2$ 전화율의 증가와 함께 COS의 선택도도 함께 증가되어, 원소 황 수율은 오히려 낮아졌다. 그러나 20 atm의 고압조건에서는 높은 $SO_2$ 전화율과 낮은 COS의 선택도가 얻어졌다. 이와 같은 결과는 높은 압력으로 인한 반응속도의 증가와 함께 생성된 원소 황이 응축되어 CO에 의한 COS 생성이 억제되었기 때문이라 판단된다. 이와 같은 결과로부터 $SO_2$ 촉매환원반응으로 높은 황 수율은 고압조건에서 더 유리하게 얻을 수 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.25-25
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.157-157
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• 1997

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.156-159
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• 2018

Inductively coupled plasma (ICP) treatment with argon and a mixture of argon and oxygen gases has been used to modify the surface of polycarbonate (PC) substrates. The results showed that the surface contact angle was inversely proportional to the plasma discharge power and that the mixed-gas plasma (gas flow 10:10 sccm, discharge power 60 W) decreased the surface contact angle as low as $18.3^{\circ}$, indicating a large increase in the surface hydrophilicity. In addition, $SnO_2$ thin films deposited on the PC substrate effectively enhanced the ICP plasma treatment, and could also enhance the usefulness of PC in the inner parts of automobiles.

• 한국재료학회지
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• 제13권5호
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• pp.309-312
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• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 한국재료학회지
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• 제13권2호
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• pp.111-114
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• 2003

Effects of substrate materials on the microstructure and the sensitivity of $SnO_2$thin film gas sensors have been studied. Various substrates were studied, such as oxidized silicon, sapphire, polished alumina, and unpolished alumina. It was observed that strong correlation exists between the electrical resistance and the CO gas sensitivity of the manufactured sensors and the surface roughness of $SnO_2$thin films, which in turn was related to the surface roughness of the original substrates. X$SnO_2$thin film gas sensor on unpolished alumina with the highest surface roughness showed the highest initial resistance and CO gas sensitivity. The transmission electron microscopy observation indicated that shape and size of the columnar microstructure of the thin films were not critically affected by the type of substrates.

• Bulletin of the Korean Chemical Society
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• 제19권11호
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• pp.1161-1164
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• 1998

The catalytic transformation of sterically bulky tertiary stannane n-Bu3SnH by the Cp2MCl2/Red-Al (M=Ti, Zr, Hf) and M(CO)6 (M=Cr, Mo, W) catalysts yielded two kinds of catenated products: one is a cross-linked polystannane as minor product, and the other is hexabutyldistannane (n-Bu3Sn)2 as major product. The distannane was produced by simple dehydrocoupling of n-Bu3SnH, whereas the cross-linked polystannane could be obtained via redistribution/dehydrocoupling combination process of n-Bu3SnH. The redistribution/dehydrocoupling combination process may initially produce a low-molecular-weight oligostannane with partial backbone Sn-H bonds which could then undergo an extensive cross-linking reaction of backbone Sn-H bonds, resulting in the formation of an insoluble polystannane.

• 한국표면공학회지
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• 제51권1호
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• pp.47-53
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• 2018

Sn-based lithium-ion batteries have low cost and high theoretical specific capacity. However, one of major problem is the capacity fading caused by volume expansion during lithiation/delithiation. In this study, 3-dimensional foam structure of Cu-Sn alloy is prepared by co-electrodeposition including large free space to accommodate the volume expansion of Sn. The Cu-Sn foam structure exhibits highly porous and numerous small grains. The result of EDX mapping and XPS spectrum analysis confirm that Cu-Sn foam consists of $SnO_2$ with a small quantity of CuO. The Cu-Sn foam structure electrode shows high reversible redox peaks in cyclic voltammograms. The galvanostatic cell cycling performances show that Cu-Sn foam electrode has high specific capacity of 687 mAh/g at a current rate of 50 mA/g. Through SEM observation after the charge/discharge processes, the morphology of Cu-Sn foam structure is mostly maintained despite large volume expansion during the repeated lithiation/delithiation reactions.