• 한국정보통신학회논문지
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• 제8권7호
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• pp.1436-1441
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• 2004

산화물 반도체의 비정상적 전류-전압 특성을 조사하였고, 그 전류-전압 특성을 산화물 반도체 가스센서에 적용하여 히터없이 감지막의 자기발열 메커니즘에 의해 환원성 가스를 검지하는 새로운 방법을 제시하였다. 평면 구조의 후막 가스센서는 WO3가 도핑된 SnO2 산화물 반도체를 이용하여 스크린 프린팅 방법으로 제조하였다. 감지막에 공급된 전압은 감지막의 발열을 초래하고 이 센서에 가스가 노출될 경우, 가스 감지막 표면의 재 반응에 의하여 전류는 급격히 변화하고 이로써 가스를 검지 할 수 있게 되었다. 이 가스 검지 구조의 가장 특이하고 매력적인 면은 검지를 위해 모든 산화물 반도체 가스센서가 가지고 있어야 하는 히터가 필요 없다는 것이다. 이 새로운 감지 방법을 C2H5OH 가스검지에 적용시켜 보았다.

• The Korean Journal of Ceramics
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• 제2권3호
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• pp.162-166
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• 1996

The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• Journal of information and communication convergence engineering
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• 제2권1호
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• pp.22-25
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• 2004

A highly sensitive ammonia gas sensor using thick-film technology has been fabricated and examined. The sensing material of the gas sensor is FeOx-$WO_{3}-SnO_{2}$ oxide semiconductor. The sensor exhibits resistance increase upon exposure to low concentration of ammonia gas. The resistance of the sensor is decreased, on the other hand, for exposure to reducing gases such as ethyl alcohol, methane, propane and carbon monoxide. A novel method for detecting ammonia gas quite selectively utilizing a sensor array consisting of an ammonia gas sensor and a compensation element has been proposed and developed. The compensation element is a Pt-doped $WO_{3}-SnO_{2}$gas sensor which shows opposite direction of resistance change in comparison with the ammonia gas sensor upon exposure to ammonia gas. Excellent selectivity has been achieved using the sensor array having two sensing elements.

• 한국결정성장학회지
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• 제7권3호
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• pp.418-427
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• 1997

$La_2O_3$가 각각 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% 첨가된 $0.05pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_30.84PbZroO_3＋0.4Wt%MnO_2$ (이하 0.05PSS -0.11PT-0.84PZ+0.4wt%$MnO_2$)계를, $1250^{\circ}C$에서 $PbZrO_3$를 분위기 분말로 사용하여 성형체 무게의 1/2을 함께 넣고 소결체를 제조하여 그 특성을 분석하였다. 소결체의 밀도는 7.683 g/$\textrm {cm}^3$에서 7.515 g/$\textrm {cm}^3$ 범위였으며, 3 mole% $La_2O_3$를 첨가한 경우 가장 높은 값을 나타내었다. 0에서 5 mole% 범위에서 $La_2O_3$ 첨가량을 증가시킬 때 평균 입경이 9.0 $\mu \textrm{m}$에서 1.3 $\mu\textrm{m}$까지 감소되었다. 결정구조의 경우 $La_2O_3$첨가량을 0에서 1 mole%로 할 때 0.05PSS-0.11 PT-0,84PZ계에서 고용된 상을 형성하였으나 3, 5 mole%로 첨가량을 증가시킴에 따라 제2차 산이 형성되었고, 소결체를 $120^{\circ}C$ 또는 $140^{\circ}C$에서 $5 KV_{DC}$ /mm로 20분간 poling 전후에 $La_2O_3$ 첨가량이 0 에서 3 mlole%까지 증가될수록 1KHz에서의 유전 상수는 증가되었으며, 유전손실은 모든 경우에서 1 % 미만의 값을 나타내었다. $La_2$O$_3$첨가량이 0, 0.5, 1, 3 mole%로 증가됨에 따라 큐리온도가 208$^{\circ}C$, 183$^{\circ}C$, $152^{\circ}C$ 그리고 $127^{\circ}C$로 감소되었다. $La_2O_3$가 증가됨에 따라 대체로 $K_{p}$ 증가되었으며 0.7 mlole%의 $La_2O_3$를 첨가한 소결체를 $140^{\circ}C$에서 poling한 경우 가장 높은 $K_p$값으로 14.5 %를 나타내었다.

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.457-460
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• 2006

Y doped zinc oxide (YZO) thin films were deposited on F doped $SnO_2$ (FTO) glass substrate by sol-gel method using the spin-coating system. A homogeneous and stable solution was prepared by dissolving acetate in the solution added diethanolamine as sol-gel stabilizer. YZO films were obtained after preheated on the hot-plate for 5minute before each coating; the number of coating was 3 times. After the coating of last step, annealing of YZO films performed at $450^{\circ}C$ for 30 minute. In order to confirming of a ultraviolet ray interruption and down-conversion effects, optical properties of YZO films, transmission spectrum and fluorescent spectrum were used. Also, for understanding the obtained results by experiment, the elestronic state of YZO was calculated using the density functional theory The results obtained by experiment were compared with calculated structure. The detail of electronic structure was obtained by the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method. The density of state and energy levels of dopant element were shown and discussed in association with optical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• 전기전자학회논문지
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• 제22권2호
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• pp.427-431
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• 2018

본 논문에서는 최근 전력반도체 산업에서 활용되어지는 와이드밴드갭 반도체 중에 하나인 $Ga_2O_3$를 이용한 에피웨이퍼 성장에 관련되어 서술하였다. GaN 성장시 활용되어지는 HVPE법을 이용하여 Sn이 도핑된 $Ga_2O_3$ 기판웨이퍼에 평균 $5.3{\mu}m$ 두께로 성장시켰다. 일반적으로 화합물반도체의 에피 두께가 $5{\mu}m$일 경우 SiC의 경우 600V 전력반도체소자를 제작할 수 있으며, $Ga_2O_3$ 에피웨이퍼의 경우에는 1000V이상의 전력소자를 제작할 수 있다. 성장된 에피웨이퍼의 J-V 측정 결과 $2.9-7.7m{\Omega}{\cdot}cm^2$의 온저항을 얻을 수 있었으며, 역방향의 경우 상당히 높은 전압에서도 누설전류가 거의 없음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.