• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

• Journal of Welding and Joining
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• 제23권5호
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• pp.49-54
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• 2005

The effective charge number and the critical current density of electromigration in eutetic SnPb and Pb Free $(SnAg_{3.8}Cu_{0.7)$ flip chip solder bumps are studied. The effective charge number of electromigration in eutectic SnPb solder is obtained as 34 and the critical current density is $j=0.169{\times}({\delta}_{\sigma}/{\delta}_x})\;A/cm^2,\;where\;({\delta}_{\sigma}/{\delta}_x})$ is the electromigration-induced compressive stress gradient along the length of the line. While the effect of electromigration in Pb free solder is much smaller than that in eutectic SnPb, the product of diffusivity and effective charge number $DZ^{\ast}$ has been assumed as $6.62{\times}10^{-11}$. The critical length for electromigration are also discussed.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.67-73
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• 2001

To investigate the relationships of solder joint characteristics with solder composition and A:V ratio (solder volume per pad area), Sn-37Pb and Sn-4.0Ag-0.5Cu solder balls with 330, 400, 450 and $457{\mu}{\textrm}{m}$ size were reflowed on same substrate. Sn-37Pb and Sn-4.0Ag-0.5Cu was reflowed at $220^{\circ}C$ and $240^{\circ}C$ respectively by IR-type soldering machine. As a result of reflowed solder- ball diameter(D) and height(H) measurement, D/H was decreased with solder ball size increment in range of 330~450 ${\mu}{\textrm}{m}$. But, D/H was increased in the solder joint for 457 ${\mu}{\textrm}{m}$ size, it was caused possibly by decrement of solder ball height increment compared with solder volume increment. As a result of shear and pull test, joint strength with A:V ratio was high. Joint strength of Sn-4.0Ag-0.5Cu was higher than Sn-37Pb. However, Sn-37Pb had more stable solder joint of small standard deviation. A thick and clean scallop type Ni-Cu-Sn intermetallic compound layer was formed in high A:V ratio and Sn-4.0Ag-0.5Cu solder joint interface.

• 한국표면공학회지
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• 제36권5호
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• pp.386-392
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• 2003

The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

• 한국재료학회지
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• 제8권11호
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• pp.1055-1060
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• 1998

기계적 합금화 공정과 가압소결법으로 ($Pb_{1-x}Sn_x$)Te($0\leq{x}\leq{0.4}$)합금을 제조하여 SnTe 함량에 따른 열전특성을 분석하였다. PbTe와 ($Pb_{0.9}Sn_{0.1}$)Te 가압소결체는 각기 $200^{\circ}C$와 $300^{\circ}C$에서 p형에서 n형으로 천이되었으나, SnTe를 0.2몰 이상 함유한 가압소결체는 $450^{\circ}C$까지의 온도범위에서 p형 전도를 나타내었다. Extrinsic 전도영역에서 SnTe 함량이 증가함에 따라 ($Pb_{1-x}Sn_x$)Te 가압소결체의 Seebeck 계수와 전기비저항이 감소하였다. SnTe 함량이 증가함에 따라 (Pb1-xSnx)Te 가압소결체의 최대성능지수를 나타내는 온도가 고온으로 이동하였으며, ($Pb_{0.7}Sn_{0.3}$)Te 가압소결체는 $200^{\circ}C$에서 $0.68\times10_{-3}/K$의 최대성능지수를 나타내었다.

• 한국안광학회지
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• 제9권1호
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• pp.35-41
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• 2004

IV-VI족 화합물인 PbSnSe는 흥미 있는 물리적 특성을 가지고 있는 화합물 반도체로써 본 실험에서는 HWE 방법으로 성장시킨 PbSnSe 박막에 대한 특성을 조사하였다. 원료부와 열벽부 그리고 기판의 온도를 변화시키며 단결정 박막을 성장시켰다. Rutherford back scattering (RBS)을 측정하여 Pb:Sn:Se의 조성비를 확인하였다. 특히 좁은 에너지 대역을 측정하기에 매우 용이한 Fourier transform infra red (FT-IR)측정 장치를 이용하여 에너지 갭을 측정하였다. 박막의 표면 상태는 atomic force microscopy (AFM) 사진과 주사 전자 현미경 (SEM) 사진으로 관찰하여 결정구조와 성장 용도와의 연관성을 조사하였다. 광학 상수는 Spectroscopic ellipsometry (SE) 방법을 이용하여 박막의 광학 상수를 측정했다. PbSnSe 화합물 에피층 시료의 굴절률(n), 유전상수(${\varepsilon}$), 반사율(R) 그리고 흡수 계수(${\alpha}$)등 광학상수를 측정하였다.

• 한국표면공학회지
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• 제32권3호
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• pp.211-213
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• 1999

In the future, restrictions are likely to be imposed on the use of lead in the electronics industry. In dealing with such a move, we have been developing Pb-free Sn-Ag plating process to replace presently available Sn-Pb process. In this paper, the result of a basic comparison test between Sn-Pb plating and Sn-Ag plating is reported.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.332-337
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• 2015

We have studied the effects of Ag on the characteristics of $Sn_{60}Pb_{40}Ag_x$ (wt%) solder for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of $Ag_3Sn$ after reacting with some part of Sn atoms, while they did not react with Pb atoms, but decreased the mean size of Pb solid phase. The enhancement of peel strength between solar cell and ribbon is an important part in the developments of long-lifespan solar module. The peel strength of the solder ribbon of $Sn_{60}Pb_{40}$ (wt%) was $169N/mm^2$, and it was largely enhanced by adding a small amount of Ag atoms. The maximum peel strength was $295N/mm^2$ in the solder ribbon of $Sn_{60}Pb_{40}Ag_2$ (wt%). This result is caused by the high binding energy of 162.9 kJ/mol between Ag atoms in the solder and Ag atoms in Ag sheet.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.1-5
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• 2000

열전반도체 ($Pb_{1-x}Sn_{x}$)Te를 AC통전 가압법으로 제조하여 그물성에 대해서 연구하였다. 균질성 향상과 구성 성분의 휘발방지에 유효한 진동분쇄공정으로 기계적 합금화를 시켰다. Sn 함량이 증가함에 따라 합금화에 요구되는 기계적 합금화 시간이 증가되었다. AC 통전 hot press법으로 873-923 K에서 1~4분간 150 kgf/$\textrm{cm}^2$의 압력으로 소결하였다. 단시간의 소결은 Te의 증발을 억제할 수 있었다. ($Pb_{1-x}-Sn_{x}$)Te 밀도는 소결 시간보다 소결온도에 더 영향을 받았다. Sn첨가량이 10 mol% 이하일때 온도 상승에 따라 p-n전이 현상이 일어났으나 그 이상의 함량에서는 p-type반도성이 그대로 유지됨이 관찰되었다. 열기전력은 500 K, x=0.2일때 250 $\mu$V/K의 최대치론 나타내었다. Sn함량의 증가에 따라 최대치는 낮아졌으며, 그 온도는 고온측으로 이동하였으며, 전기전도도의 최대치는 온도가 상승함에 따라 저하되었다.