• Proceedings of the KWS Conference
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• 2006.05a
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• pp.230-232
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• 2006

Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.63-67
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• 2003

Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.114-117
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• 2003

본 연구에서는 계산을 통해 나온 Sn-Ag-Cu 삼원계 공정점(Sn-3.7Ag-0.9Cu)을 바탕으로 그 근처의 응고경로가 다른 6가지 조성(Sn-4.6Ag-0.4Cu, Sn-4.9Ag-1.0Cu, Sn-3.9Ag-1.3Cu, Sn-2.2Ag-1.2Cu, Sn-2Ag-0.7Cu, Sn-2.7Ag-0.3Cu)에 대한 솔더합금의 미세조직을 관찰하였다. 응고경로는 $L\;\rightarrow\;L+Primary\;\rightarrow\;L+Primary+Secondary\;\rightarrow\;Ternary\;Eutectic+Primary+Secondary$로 되며 6가지 경우를 예상할 수 있다 솔더합금의 미세조직은 느린 냉각으로 인하여 빠른 냉각, 보통 냉각에 비해 상대적으로 커다란 $\beta-Sn$ dendrite를 보였고 $Ag_3Sn,\;Cu_6Sn_5$과는 다르게 $\beta-Sn$는 약 $30^{\circ}C$의 과냉(DSC분석)이 존재하게 되어 Sn-4.6Ag-0.4Cu의 경우에는 $Ag_3Sn$상이, Sn-2.2Ag-1.2Cu의 경우에는 $Cu_6Sn_5$가 과대성장을 하였다. 솔더의 기계적 특성을 살펴보고자 Cu 기판위에서 각 조성의 솔더볼을 솔더링한 후 다양한 냉각 속도를 적용하여 reflow 솔더링을 하고 솔더/기판 접합에 대한 전단 강도 시험을 실시했다. 냉각 속도가 빠를수록 $\beta-Sn$의 dendrite가 미세해져서 높은 전단 강도를 보였고 6가지 조성의 솔더볼중 공정조직 분율이 낮은 Sn-2Ag-0.7Cu 조성의 경우에서 낮은 전단 강도가 나타났다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.549-554
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• 2003

The purpose of this paper is to investigate the solder properties by the change of P mass percentage. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed. Adding P in the solder alloys resulted in improvement of tensile strength, reduction of intermetallic compound growth, reduction of oxidization in fusible solders under wave soldering. After comparing solder alloy containing P with tin-lead eutectic solder alloy, P contained solders alloys showed much better solder properties than eutectic solder alloy. Furthermore, this solder alloy presented remarkable properties than any other lead-free solder alloy.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.104-108
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• 2002

This paper was investigated the lead free solder characteristics by P mass percentage chang e. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed for estimation. By adding P on the solder alloys, it was showe d improvement of tensile strength, reduction of intermetallic compound growth and reduction of oxidization of fusible solder under wave soldering processes. After comparing solder alloy containing P with tin lead eutectic solder alloy, p containing solder alloys showed much better solderability than eutectic solder alloys.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.7-18
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• 1998

In the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as 1$\mu$m Al/0.2$\mu$m Pd/1$\mu$m Cu, laid under eutectic Pb/Sn solder were investigated with regard to their interfacial reactions and adhesion proper-ties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMCs) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1$\mu$m Al/0.2$\mu$m Ti/5$\mu$m Cu and 1$\mu$m Al/0.2$\mu$m ni/1$\mu$m Cu even after 4 solder reflows or 7 day aging at 15$0^{\circ}C$. In contrast 1$\mu$m Al/0.2$\mu$m Ti/1$\mu$m Cu and 1$\mu$mAl/0.2$\mu$m Pd/1$\mu$m 쳐 show poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. In this case thin 1$\mu$m Cu and 0.2$\mu$m Pd diffusion barrier layer were completely consumed by Cu-Sn and pd-Sn reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.338-338
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• 2013

Monolithic three-dimensional integrated circuits (3D-ICs) 구현 시 bonding 과정에서 발생되는 aluminum (Al) 이나 copper (Cu) 등의 interconnect metal의 확산, 열적 스트레스, 결함의 발생, 도펀트 재분포와 같은 문제들을 피하기 위해서는 저온 공정이 필수적이다. 지금까지는 polymer 기반의 bonding이나 Cu/Cu와 같은 metal 기반의 bonding 등과 같은 저온 bonding 방법이 연구되어 왔다. 그러나 이와 같은 bonding 공정들은 공정 시 void와 같은 문제가 발생하거나 공정을 위한 특수한 장비가 필수적이다. 반면, 두 물질의 합금을 이용해 녹는점을 낮추는 eutectic bonding 공정은 저온에서 공정이 가능할 뿐만 아니라 void의 발생 없이 강한 bonding 강도를 얻을 수 있다. Aluminum-germanium (Al-Ge) 및 aluminum-indium (Al-In) 등의 조합이 eutectic bonding에 이용되어 각각 $424^{\circ}C$ 및 $454^{\circ}C$의 저온 공정을 성취하였으나 여전히 $400^{\circ}C$이상의 eutectic 온도로 인해 3D-ICs의 구현 시에는 적용이 불가능하다. 이러한 metal 조합들에 비해 indium (In)과 tin (Sn)은 각각 $156^{\circ}C$ 및 $232^{\circ}C$로 굉장히 낮은 녹는점을 가지고 있기 때문에 In-Sn 조합은 약 $120^{\circ}C$ 정도의 상당히 낮은eutectic 온도를 갖는다. 따라서 본 연구팀은 In-Sn 조합을 이용하여 $200^{\circ}C$ 이하에서monolithic 3D-IC 구현 시 사용될 eutectic bonding 공정을 개발하였다. 100 nm SiO2가 증착된 Si wafer 위에 50 nm Ti 및 410 nm In을 증착하고, 다른Si wafer 위에 50 nm Ti 및 500 nm Sn을 증착하였다. Ti는 adhesion 향상 및 diffusion barrier 역할을 위해 증착되었다. In과 Sn의 두께는 binary phase diagram을 통해 In-Sn의 eutectic 온도인 $120^{\circ}C$ 지점의 조성 비율인 48 at% Sn과 52 at% In에 해당되는 410 nm (In) 그리고 500 nm (Sn)로 결정되었다. Bonding은 Tbon-100 장비를 이용하여 $140^{\circ}C$, $170^{\circ}C$ 그리고 $200^{\circ}C$에서 2,000 N의 압력으로 진행되었으며 각각의 샘플들은 scanning electron microscope (SEM)을 통해 확인된 후, 접합 강도 테스트를 진행하였다. 추가로 bonding 층의 In 및 Sn 분포를 확인하기 위하여 Si wafer 위에 Ti/In/Sn/Ti를 차례로 증착시킨 뒤 bonding 조건과 같은 온도에서 열처리하고secondary ion mass spectrometry (SIMS) profile 분석을 시행하였다. 결론적으로 본 연구를 통하여 충분히 높은 접합 강도를 갖는 In-Sn eutectic bonding 공정을 $140^{\circ}C$의 낮은 공정온도에서 성공적으로 개발하였다.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.411-418
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• 2011

The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.