• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.310-314
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• 2008

Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.202-204
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• 2006

The reliability of insert mounted components has been considered as their life time was getting increased. The spread of crack and the growth of IMC(intermetallic compound) were observed by SEM(scanning electron microscope) and EDS(energy dispersive spectroscope). The cracks in Sn-37wt%Pb under thermal shock test were found earlier than other solders(Sn-3.0wt%Ag-0.5wt%Cu and Sn-0.7wt%Cu-0.01wt%P). The IMC thickness was increased with increasing number of thermal shock cycles in the following order : Sn-0.7Cu-0.01P; Sn-3.0Ag-0.5Cu; Sn-37Pb

• Journal of the Korean Society for Marine Environment & Energy
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• v.12 no.4
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• pp.302-306
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• 2009

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind of influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference has caused this with the ingredient a nanoparticle has. Ag is included 2 % and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.37-42
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• 2001

The concerns of the toxicity and health hazard of lead in solders have demanded the research to find suitable lead-free solder alloys. It was discussed that effect of the intermetallic formation and structure on the reliability of solder joints. In this study, lead-free solder alloys with compositions of Sn/3.5Ag/0.75Cu, Sn/2.0Ag/0.5Cu/2.0Bi were applied to the 48 $\mu$BGA packages. Also, the lead-free solder alloys compared with eutectic Sn/37Pb solder using shear test under various aging temperature. Common $\mu$BGA with solder components was aged at $130^{\circ}C$, $150^{\circ}C$ and $170^{\circ}C$. And the each temperature applied to 300, 600 and 900 hours. The thickness of the intermetallics was measured for each condition and the activation energy for their growth was computed. The fracture surfaces were analyzed using SEM (Scanning Electron Microscope) with EDS (Energy Dispersive Spectroscopy). These results for reliability of lead-free interconnections are discussed.

• Proceedings of KOSOMES biannual meeting
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• 2008.05a
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• pp.137-141
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• 2008

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind a influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference was mused this with the ingredient a nanoparticle has. Ag is included 2% and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Journal of Technologic Dentistry
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• v.24 no.1
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• pp.65-71
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• 2002

This study was performed to observe the microhardness change of the surface and the bonding strength between the porcelain and alloy specimens in order to investigate the effects of appended indium, tin and copper on interfacial properties of Au-Pd-Ag alloys. The hardness of castings was measured with a micro-Vicker's hardness tester. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The microhardness of Au-Pd-Ag alloy was increased by adding indium and tin, but not increased by adding copper. The shear bonding strength of Au-Pd-Ag-Sn alloy and Au-Pd-Ag-Cu alloy showed 87MPa, 57MPa. The higher concentration of adding elements showed the higher shear bonding strength.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.25-33
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• 2001

Sn-3.5Ag-xBi alloys with five different levels of Bi (0, 2.5, 4.8, 7.5, 10 wt%) were prepared for evaluating creep properties. Cast alloys were roiled and heat treated to provide stable microstructures during the subsequent creep tests, which were conducted under constant load using dog-bone specimens. For the Bi containing alloys, creep strength showed the maximum around 2.5 wt%Bi and tended to decrease with increasing Bi content. The stress exponent of the alloy was around 4, suggesting typical dislocation creep, but the exponent was 2 for the 10 wt%Bi alloy, suggesting creep assisted by grain boundary Sliding. For the Bi containing alloys, the brittle fracture mode appeared showing small amount of reduction of area, while the ductile fracture mode was true for the Bi free alloy. Microstructural examination of ruptured specimens showed cavitations on grain boundaries normal to the load axis, and a significant of grain boundary sliding for the Bi containing alloys.

• Korean Journal of Materials Research
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• v.30 no.6
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.121-124
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• 2016

ZnSnO₃ (ZTO)/Ag/ ZnSnO₃ (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10⁻² Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.