• Restorative Dentistry and Endodontics
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• 제9권1호
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• pp.81-87
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• 1983

The purpose of this study was to observe and identify the phases of amalgam and to know the transformation of microstructure in the set amalgam by lapse of time. In this study, shofu spherical-D alloy was used. After trituration of amalgam alloy and mercury (Wig-L-Bug), it was filled in the stone dies. This specimens being polished and etched by usual method was observed under optical microscope using metallurgical microscope. And then X-ray diffractometer was used to analyze the phases contents and transformation of microstructure at $2{\frac{1}{2}}$ hours, 15 hours, 28 hours and 2 years after being amalgamated. The following results were obtained: 1. Shofu spherical-D alloy powder was composed of ${\gamma}$ phase, ${\epsilon}$phase and Ag-Cu eutectic phases. 2. ${\gamma}_2$ phases were appeared at $2{\theta}$ values ($32.0^{\circ}$ and $43.8^{\circ}$) in the amalgam which was analyzed at $2{\frac{1}{2}}$ hours and 15 hours after trituration with mercury. 3. In the amalgam at 28 hours, ${\gamma}_2$ phase was found at $2{\theta}$ value ($43.8^{\circ}$) at 35 hour, $r_2$ phase was appeared at $2{\theta}$ value $32.0^{\circ}$. 4. No ${\gamma}_2$ phases were observed in the 2 years old amalgam. But ${\eta}$ ($Cu_6Sn_5$) phases were found at $2{\eta}$ values $29.4^{\circ}$ and $42.4^{\circ}$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.123-123
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• 2012

최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Journal of Welding and Joining
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• 제26권3호
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of Welding and Joining
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• 제33권3호
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• pp.25-31
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• 2015

Due to environmental regulations (RoHS, WEEE and ELV) of the European Union, electronics and automotive electronics have to eliminate toxic substance from electronic devices and system. Specifically, reliability issue of lead-free solder joint have an increasing demand for the car electronics caused by ELV banning. The authors prepared engine control unit and cabin electronics soldered with Sn-3.0Ag-0.5Cu (SAC305). To compare with the degradation characteristics of solder joint strength, thermal cycling test (TC), power-thermal cycling test (PTC) and series tests were conducted. Series tests were conducted for TC and PTC combined stress test using the same sample in sequence and continuously. TC test was performed at $-40{\sim}125^{\circ}C$ and soak time 10 min for 1000 cycles. PTC test was applied by pulse power and full function conditions during 100 cycles. Combined stress test was tested in accordance with automotive company standard. Solder joint degradation was observed by optical microscopy and environment scanning electron microscopy (ESEM). In addition, to compare with deterioration of bond strength of quad flat package (QFP) and chip components, we have measured lead pull and shear strength. Based on the series test results, consequently, we have validated of series test method for lifetime and reliability of Pb-free solder joint in automotive electronics.