• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.23-29
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• 2006

Si-웨이퍼와 FR-4 기판을 상온에서 초음파 접합한 후, 접합부의 신뢰성을 평가하였다. Si-웨이퍼 상의 UBM(Under Bump Metallization)은 위에서부터 Cu/ Ni/ Al을 각각 $0.4{\mu}m,\;0.4{\mu}m,\;0.3{\mu}m$의 두께로 전자빔으로 증착하였다. FR-4 기판위의 패드는 위에서부터 Au/ Ni/ Cu를 각각 $0.05{\mu}m,\;5{\mu}m,\;18{\mu}m$의 두께로 전해 도금하여 형성하였다. 접합용 솔도로는 Sn-3.5wt%Ag을 두께 $100{\mu}m$으로 압연하여 사용하였다. 시편의 초음파 접합을 위하여 초음파 접합 시간을 0.5초에서 3.0초까지 0.5초 단위로 증가시키면서 상온에서 접합하였으며, 이 때 출력은 1,400W로 하였다. 실험 결과, 상온 초음파 접합법에 의해 신뢰성 있는 'Si-웨이퍼/솔더/FR-4기판' 접합부를 얻을 수 있었다. 접합부의 전단 강도는 접합 시간에 따라 증가하여 접합 시간 2.5초에서 65N으로 가장 높게 측정되었다. 이 후 접합 시간 3.0초에서는 전단 강도가 34N으로 감소하였는데, 이는 초음파 접합시간이 과도해지면서 Si-웨이퍼와 솔더 사이의 계면을 따라 균열이 발생되었기 때문으로 판단된다. 초음파 접합에 의해 Si-웨이퍼와 솔더 사이에서 생성된 금속간 화합물은 ($(Cu,Ni)_{6}Sn_{5}$)으로 확인되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 추계 기술심포지움 초록집
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• pp.68-68
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• 2004

• Corrosion Science and Technology
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• 제6권2호
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.

• Journal of Welding and Joining
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• 제30권6호
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• pp.1-5
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• 2012

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.187-189
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• 2006

최근 유연솔더에서 무연솔더로 전환함에 따라서 PCB의 도금이 솔더접합부의 각도에 미치는 영향이 중요하게 되었다. 현재 PCB 도금은 Sn, Au, OSP 등으로 다양하게 진행되고 있다. 그러나 PCB 도금이 솔더접합부의 강도에 미치는 영향에 대한 연구는 아직 미비하다. 따라서 본 연구에서는 PCB 도금(Sn, Au, OSP)이 무연솔더(Sn-3.0Ag-0.5Cu) 접합부의 초기 전단강도에 미치는 영향과 열사이클시험 후 솔더접합부의 전단강도에 미치는 영향에 대해서 연구하였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.184-186
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• 2006

Sn-3Ag-0.5Cu is one of candidate as an alternative approach to conventional lead-tin solder. In order to evaluate that creep characteristic of QFP, we used Sn-3Ag-0.5Cu where the operating temperature is $100^{\circ}C$. The specimens were loaded to failure at average pull strength in the range of 20% to 25%, X-ray machine is used to eliminate effect of void. In this paper, relation of time-displacement and steady state creep rate was studied, and used to analyze the experimental result.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2001년도 추계학술발표대회 개요집
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• pp.159-161
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• 2001

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.59-64
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• 2013

3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프의 열처리에 따른 금속간 화합물 성장 거동을 분석하기 위하여 in-situ SEM에서 $135^{\circ}C$, $150^{\circ}C$, $170^{\circ}C$의 온도에서 실시간 열처리 실험을 진행하였다. 실험 결과 금속간 화합물의 성장 거동은 열처리시간이 경과함에 따라 시간의 제곱근에 직선 형태로 증가하였고, 확산에 의한 성장이 지배적인 것을 확인 할 수 있었다. Ni/Au 층의 존재로 인해 Au의 확산으로 복잡한 구조의 금속간 화합물이 생성 된 것을 확인할 수 있다. 활성화 에너지는 $Cu_3Sn$의 경우 0.69eV, $(Cu,Ni,Au)_6Sn_5$경우 0.84 eV로 Ni이 포함된 금속간 화합물이 더 높은 것을 확인 하였으며, 확산 방지층 역할을 하는 Ni층에 의해 금속간 화합물 성장이 억제됨에 따라 신뢰성이 향상 될 것으로 사료된다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.136-138
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• 2006

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.