• Journal of Welding and Joining
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• v.23 no.5
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• pp.49-54
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• 2005

The effective charge number and the critical current density of electromigration in eutetic SnPb and Pb Free $(SnAg_{3.8}Cu_{0.7)$ flip chip solder bumps are studied. The effective charge number of electromigration in eutectic SnPb solder is obtained as 34 and the critical current density is $j=0.169{\times}({\delta}_{\sigma}/{\delta}_x})\;A/cm^2,\;where\;({\delta}_{\sigma}/{\delta}_x})$ is the electromigration-induced compressive stress gradient along the length of the line. While the effect of electromigration in Pb free solder is much smaller than that in eutectic SnPb, the product of diffusivity and effective charge number $DZ^{\ast}$ has been assumed as $6.62{\times}10^{-11}$. The critical length for electromigration are also discussed.

• The Journal of Korean Academy of Prosthodontics
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• v.25 no.1
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• pp.95-118
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• 1987

This study was undertaken to observe the elemental transition of Interface depending on different pretreatment methods, the number of filings, the kinds of porcelain powders and the various alloys in ceramo-metal restoration. The materials used in this study were Pors-on $4^{(R)}$ and Ceramco porcelain powder to compare the differences depending on the pretreatement methods and the number of firings. Ceramco porcelain powder and Vita porcelain powder were used to compare the differences of elemental transition depending on the porcelain powders. The $Parasil^{(R)},\;PGV^{(R)}$ and Pors-on $4^{(R)}$ as Pd-Ag alloy were used to compare the difference of elemental transition depending on the various alloys. The pretreatment methods were : no treatment, treatment under vacuum and air, treatment with 50 % hydrofluoric acid and double heat tretament. The number of firings were 3, 5 and 7 repeated firings All specimens were observed by SEM and concentration of elements were analyzed quantitatively with EPMA The results of this study were obtained as follows : 1. In the groups of air-treatment, concentration of Sn were the highest and widest. A high concentration of In were in the groups of vacuum and air treatment. 2. There were no significant differences in concentration of Sn between the group of vacuum, 5 minutes hydrofluoric acid and double heat treatment. (p>0.05) 3. As the period of time of hydrofluoric acid treatment increased, not only were the trace elements reduced but the main components such as Pd and Ag were also reduced. 4. Concentration of Sn and In increased and diffused with repeated firings but 5 repeated and 7 repeated firings groups had no significant differences. (p>0.05) 5. Sn were more concentrated in the group of Ceramco porcelaion powder than Vita porcelain powder. 6. The higher concentration of trace elements in the alloy, the more increasing concentration of Sn and In in the interface.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.183-188
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• 2002

With the contact pad consisted of $0.5{\mu}{\textrm}{m}$ $Au/5{\mu}{\textrm}{m}$ Ni/Cu layers on a conventional ball grid array(BGA) substrate, metallurgical reaction properties between the pad and In-15(wt.%)Pb-5Ag solder alloy were studied after reflow and solid aging. In as-reflow condition, thin AuIn$_2$or Ni$_{28}$In$_{72}$ intermetallic layer was formed at the solder/pad interface according to reflow time. Dissolution of the Au layer into the molten solder was remarkably limited in comparison with eutectic Sn-37Pb alloy. After solid aging of 300 hrs, thickness of In-Ni layer increased to about $2{\mu}{\textrm}{m}$ in the both as-reflow case. It was observed that In atoms diffuse through the AuIn$_2$phase to react with underlaying Ni layer. The metallurgical reaction properties between In-l5Pb-7Ag alloy and Au/Ni surface finish were analysed to result in suppression of Au-embrittlement in the solder joints.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.694-704
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• 2018

Novel $SnO_2$ mixed biochar composite was prepared from banana peel developed as electrode material for supercapacitor using simple chemical co-precipitation method. The physiochemical and morphological properties of activated composite $SnO_2$ mixed biochar were investigated with XRD, FTIR, UV-vis, FESEM and HRTEM. The composite accounts for outstanding electrochemical behavior such as high specific capacitance, significant rate capability and leading to good cycle retention up to 3500 cycles when used as electrode material for supercapacitors. Highly permeable $SnO_2$ mixed biochar derived from banana peel exhibited maximum specific capacitance of $465F\;g^{-1}$ at a scan rate of $10mV\;s^{-1}$ by cyclic voltammetry (CV) and $476Fg^{-1}$ at current density of $0.15Ag^{-1}$ by charge discharge studies significantly higher about 47% than previously reported identical work on banana peel biochar.

• Resources Recycling
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• v.24 no.2
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• pp.62-68
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• 2015

The high pure tin production was conducted from crude-tin containing waste solder by electro-refining process. The electro-refining process maintained at 0.2V produced tin with purity of 99.98%, whereas a little increase of voltage to 0.3 V resulted tin purity of 99.92%. The high pure tin of 3N in the present process was produced by fixing the voltage at 0.3V. Considering the high pure tin production, the current density was maintained within $100-120A/m^2$ with current efficiency of 94%. Addition of sulfuric acid of 20 ~ 25 g/L to the electrolyte solution was performed in order to keep Pb (lead) concentration below 100 mg/L in the final tin product. The anode slime generated during electro refining process was analyzed by X-ray diffraction (XRD) study to understand the phases of impurities in it. It detected the presence of Cu and Ag in the slime as in the form of $Cu_6Sn_5$, $Ag_3Sn$, whereas Pb occurred as $PbSO_4$ compound.

• Resources Recycling
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• v.31 no.3
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• pp.61-72
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• 2022

We investigated the electrochemical behavior of Sn (93.0 %)-Ag (4.06 %)-Cu (0.89 %) during electrolysis of Pb-free solder waste to recover tin and silver. A thin strip of the solder waste produced by high-temperature melting and casting was used as a working electrode to perform electrochemical analysis. During anodic polarization, the current peak of an active region decreased with an increase in the concentration of sulfuric acid used as an electrolyte. This resulted in the electro-dissolution of the working electrode in the electrolyte (1.0 molL^-1 sulfuric acid) for a constant current study. The study revealed that the thickening of an anode slime layer at the working surface continuously increased the electrode potential of the working electrode. At 10 mAcm^-2, the dissolution reaction continued for 25 h. By contrast, at 50 mAcm^-2, a sharp increase in the electrode potential stopped the dissolution in 2.5 h. During dissolution, silver enrichment in the anode slime reached 94.3% in the 1 molL^-1 sulfuric acid electrolyte containing a 0.3 molL^-1 chlorine ion, which was 12.7% higher than that without chlorine addition. Moreover, the chlorine enhanced the stability of the dissolved tin ions in the electrolyte as well as the current efficiency of tin electro-deposition at the counter electrode.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.71-77
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• 2011

Main parameters of the screen printing were determined and the printing parameters were optimized for 0402, 0603, and 1005 chips in this study. The solder pastes used in this study were Sn-3.0Ag-0.5Cu and Sn-0.7Cu. The process parameters were stencil thickness, squeegee angle, printing speed, stencil separating speed and gap between stencil and PCB. The printing pressure was fixed at 2 $kgf/cm^2$. From ANOVA results, the stencil thickness and the squeegee angle were determined to be main parameters for the printing efficiency. The printing efficiency was optimized with varying two main parameters, the stencil thickness and the squeegee angle. The printing efficiency increased as the squeegee angle was lowered under 45o for all chips. For the 0402 and the 0603 chips, the printing efficiency increased as the stencil thickness decreased. On the other hand, for the 1005 chip, the printing efficiency increased as the stencil thickness increased.