• Restorative Dentistry and Endodontics
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• v.9 no.1
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• pp.81-87
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• 1983

The purpose of this study was to observe and identify the phases of amalgam and to know the transformation of microstructure in the set amalgam by lapse of time. In this study, shofu spherical-D alloy was used. After trituration of amalgam alloy and mercury (Wig-L-Bug), it was filled in the stone dies. This specimens being polished and etched by usual method was observed under optical microscope using metallurgical microscope. And then X-ray diffractometer was used to analyze the phases contents and transformation of microstructure at $2{\frac{1}{2}}$ hours, 15 hours, 28 hours and 2 years after being amalgamated. The following results were obtained: 1. Shofu spherical-D alloy powder was composed of ${\gamma}$ phase, ${\epsilon}$phase and Ag-Cu eutectic phases. 2. ${\gamma}_2$ phases were appeared at $2{\theta}$ values ($32.0^{\circ}$ and $43.8^{\circ}$) in the amalgam which was analyzed at $2{\frac{1}{2}}$ hours and 15 hours after trituration with mercury. 3. In the amalgam at 28 hours, ${\gamma}_2$ phase was found at $2{\theta}$ value ($43.8^{\circ}$) at 35 hour, $r_2$ phase was appeared at $2{\theta}$ value $32.0^{\circ}$. 4. No ${\gamma}_2$ phases were observed in the 2 years old amalgam. But ${\eta}$ ($Cu_6Sn_5$) phases were found at $2{\eta}$ values $29.4^{\circ}$ and $42.4^{\circ}$.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

• Economic and Environmental Geology
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• v.12 no.2
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• pp.79-93
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• 1979

Twenty five samples of the scheelite-powellite series from twelve Korean tungsten deposits of various geologic settings were studied mineralogically and geochemically. Variations in the trace-element contents of the scheelite minerals are considered in relation to geologic settings and mineralogic properties. Scheelites from ore deposits developed in similar geologic settings and under similar physicochemical conditions are characterized by specific combinations of trace elements.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.91-97
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• 2022

The wettability and rheological properties of solder paste with the size of the solder powder were evaluated. To formulate the solder paste, three types of solder powder were used: T4 (20~28 ㎛), T5 (15~25 ㎛), and T6 (5~15 ㎛). The viscosities of the T4, T5, and T6 solder pastes at 10 RPM were 155, 263, and 418 Pa·s, respectively. After 7 days, the viscosity of the T4 solder paste slightly increased by 2.6% and that of T5 was increased by 20.6%. The viscosity of the T6 solder paste after 7 days could not be measured due to high viscosity. The viscosity variation with solder particle size also affected on the printability of the solder. In the case of the T4 solder paste, printability, slump, bridging, and soldering properties were excellent. On the other hand, T5 showed slight dewetting and solder ball defects. Especially, T6, which the smallest powder size, showed poor printability and dewetting at the edge of solder.

• Microbiology and Biotechnology Letters
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• v.20 no.5
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• pp.519-526
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• 1992

The gene coding for urease of alkalophilic Bacillus pasteurii had been cloned in Escherichia coli previously. The urease protein was purified 63.1-fold by TEAE-cellulose, DEAE-Sephadex A-50, Sephadex G-150 and Sephadex G-200 chromatographies with a 7.3% yield from the sonicated fluid of the E. coli HB1Ol(pBUll) encoding B. pasteurii urease gene. The ureases of E. coli (pBUll) and B. pasteurii possessed as a $K_m$ for urea, 42.1 mM and 40.4 mM, respectively. They hydrolyzed urea with $V_{max}$ of 86.9$\mu$mol/min and 160$\mu$mol/min, respectively. Both ureases were composed with four subunits (Mrs 67,000) and a subunit (Mr 20,000). The molecular weight of both native enzymes was Mr 280,OOO$pm$10,000 determined by gel filtration chromatography and Coomassie blue staining of the subunits. The optimal reaction pH of both ureases were pH 7.5. The ureases were stabled in pH 5.5-10.5. The optimal reaction temperature of both ureases were $60^{\circ}C$, and the ureases were stable for an hour at $50^{\circ}C$, 40min at $60^{\circ}C$ and 10 min at $70^{\circ}C$ The activity of both enzymes were inhibited completely by $Ag^{2+}$, $Hg^{2+}$, $Zn^{2+}$, $Cu^{2+}$, and were inhibited 60% by CoH, 30% by $Fe^{2+}$ and 10% by $Pb^{2+}$. However it was increased by the addition of $Sn^{2+}$, $Mn^{2+}$, $Mg^{2+}$ at concentration of $1{\times}10^{-3}$M. Both ureases were inhibited completely by p-CMB and acetohydroxamic acid. The urease expressed in E. coli (pBU11) was inhibited 70% by SDS. The urease of B. pasteurii was inhibited 40% by hydroxyurea, whereas the recombinant urease of E. coli strain was inhibited 17%. Both enzymes were not inhibited by cyclohexanediaminetetraacetic acid (CDTA) and ethylendiaminetetraacetic acid (EDTA).

• Journal of the Korean Society of Food Science and Nutrition
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• v.19 no.6
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• pp.625-635
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• 1990

The purpose of this study was focused on investigation of biochemical properties of amylases in germinating corn(Zea mays L.) the amylase(I), (II) and (III) from germinating corn seeds were partially purified by ammonium sulfate precipitation, DEAE-Sephadex A-50 ion exchange column chromatography and Sephadex G-100 gel filtration. The last step was effective for separation of the corn amylases to a homogeneous slate. the purified amylase(I) was identified as a kind of $\alpha$-amylase from the fact that 5％ starch solution was hydrolysed into mainly maltose and maltotetrose by it, and amylase(II) and amylase(III) were enzymes producing maltotetrose as main product. The molecular weight and specific activity of the amylase(I), (II) and (III) were determined to be 54,000 and 70.47 unit/mg, 39,000 and 62.98 unit/mg, and 51,000 and 80.39 unit/mg, respectively. It showed a tendency to increase the amylases activities in presence of Ba, Ca, Co and Fe groups, but inhibits in that of Ag, Sn, Hg and Zn groups, and amylase(I), (II) and (III) remained stable at pH 5-6 and 2$0^{\circ}C$ for 40 days in containing of 1 mM CaCl$_2$. The optimum pH and optimum temperatures were pH 6, pH 5 and pH 6 and 35$^{\circ}C$, 55$^{\circ}C$ and 55$^{\circ}C$, respectively. These results suggest that the amylase(I), (II) and (III) were different amylases.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.123-123
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• 2012

최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.