• Journal of Magnetics
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• 제14권4호
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• 대한화학회지
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• 제27권6호
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• pp.424-482
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• 1983

분석시료에 일정량의 표준물을 첨가한 후 희석제로 묽히는 방법을 이용하여 주석슬랙중의 $Ta_2O_5$,$Nb_2O_5$ 및 $SnO_2$를 X-선 분광 분석법으로 정량하였다. 희석제로는 $SiO_2$와 $Fe_2O_3$를 사용하였으며 첨가시료와 1:1의 비로 희석 시켰다. $Ta_2O_5$와 $SnO_2$ 의 분석결과는 $Fe_2O_3$보다 $SiO_2$로 희석시킨 것이 표준 검정곡선법에 의해 얻은 분석값과 더 잘 일치하고, $Nb_2O_5$는 이와 반대로 $SiO_2$보다 $Fe_2O_3$로 희석시킨 것이 더 잘 일치함을 보여주었다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.190-190
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• 2003

여러원소 (Sb, F 등)를 도핑한 SnO$_2$ 투명전도막은 여러 가지 훌륭한 특성으로 Solar cell, heat mirrors, gas sensors, liquid crystal displays, thick film resistor 등과 같이 넓은 범위에서 응용되고 있다. 본 연구에서는 Sb 도핑된 Tin Oxide films이 Sol-gel dip coating법에 의해 준비되었다. SnO$_2$:Sb 용액은 SnC1$_2$ 와 SbC1$_3$ Power를 알코올에 용해하여 Ethylene glycol 와 Citric acid를 첨가하여 합성하였다. 막의 상형성은 XRD와 SEM(Scanning electron microscope)에 의해서 분석되었으며, 특성분석은 투과율(UV/VIS Spectrophotometer)과 표면전기저항(four point probe)으로 분석되었다. SiO$_2$ barrier이 SnO$_2$:Sb 막의 특성에 미치는 영향을 확인하기 위하여 XPS(X-ray photoelectron spectroscopy) 분석이 적용되었다.

• Bulletin of the Korean Chemical Society
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• 제33권6호
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• pp.1856-1860
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• 2012

$SnO_2/SiO_2$ nanocomposite has been synthesized by using sol-gel method. Prepared catalytic materials has been well characterized by using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FT-IR), Brunauer-Emmer-Teller (BET) surface area, and temperature-programmed desorption of ammonia ($NH_3$-TPD). $SnO_2/SiO_2$ nanocomposite catalyzed synthesis of 2-arylbenzothiazoles by the cyclocondensation of 2-aminothiophenol and aromatic aldehydes under reflux condition in 1:1 EtOH:$H_2O$. After completion of the reaction, catalyst can be recovered efficiently and reused with consistent activity.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• 한국재료학회지
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• 제9권12호
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• pp.1155-1159
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• 1999

플라즈마 화학증착 (PECVD) 장비를 이용하여 $SnO_2$ 투명전도막이 피막된 유리기판 위에 p-SiC/i-Si/n-Si 이종접합 태양전지를 제작하였다. p-SiC 층의 증착중에 기체조성 x=$CH_4/\;(SiH_4+CH_4)$의 변화에 대한 태양전지의 광기전 특성을 관찰하였다. 기체조성(x)이 0~0.4의 범위에서 p-SiC 창층의 광학적 밴드갭의 증가로 인하여 태양전지의 효율은 증가하였으나, 그 이상의 기체조성에서는 p-SiC/i-Si 계면에서의 조성불일치가 증가하여 태양전지의 효율이 감소하였다. 이러한 계면문제는 p-SiC 층과 i-Si 계면에서의 조성불일치가 증가하여 태양전지의 효율이 감소하였다. 이러한 계면문제는 p-SiC 층과 I-Si 층 사이에 I-SiC 완충층을 삽입함으로써 크게 감소하였다. 그 결과 유효면적이 $1cm^2$인 glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag 구조의 박막 태양전지는 100mW/$cm^2$ 조도 하에서 8.6%의 효율을 나타내었다. ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615)

• 한국세라믹학회지
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• 제44권11호
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• pp.650-654
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• 2007

[ $SnO_2$ ]-doped $TiO_2$ thin films were prepared from tin (IV) bis (acetylacetonate) dichloride and titanium diisopropoxide bis (acetylacetonate) with pluronic P123 or degussa P25 as a structural-directing agent. These hydrolyzed sol were spin coated onto Si(100) wafer substrate. The microstructure, morphology and bonding states of thin films were studied by field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of these films was investigated by using indigo carmine solution.

• 한국표면공학회지
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• 제29권6호
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• 한국세라믹학회지
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• 제39권4호
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• pp.394-400
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• 2002

리튬 이차전지용 부극재료로 미량의 실리콘이 첨가된 주석산화물 박막을 R.F. magnetron sputtering법을 이용하여 제조하였다. 실리콘의 첨가로 인해 주석의 산화상태를 감소시켜서 첫 번째 충방전 동안 비가역성을 감소시키는 전기 화학적 결과를 얻을 수 있었다. 주석 산화물 박막의 결정 배향성은 기판온도가 올라감에 따라서 (110),(101),(211) 면들이 성장하였다. 합성된 박막은 기판온도가 $300^{\circ}C$이고 $Ar:O_2$의 비가 7:3일때, 700mAh/g의 에너지 밀도를 가지며 가장 좋은 가역성능을 보여주었다.