• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.743-749
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• 2003

By biasing the gate of cold-HEMT with a voltage slightly lower than the pinch-off point, a new small-signal modeling method that is free from gate degradation problem and requires no additional DC measurement is proposed in this paper. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 49 different normal operating bias points.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.853-859
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• 2014

This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.