• 한국세라믹학회지
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• 제43권12호
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• pp.829-832
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• 2006

In this study, the influence of the magnetic field on ferrite slurry's injection time during the slurry forming process was investigated. The evaluation system of the slurry's injection time under the strong magnetic field was designed with FEM and manufactured. Studied parameters were the applied magnetic field, the input pressure of the slurry, and the supplying tube materials. As the results, the injection time was increased with the external magnetic field strength and rapidly decreased with increasing the input pressure of the slurry. Also the injection time was decreased when the supplying tube was manufactured with the magnetic material having the higher magnetic permeability than the ferrite.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.272-277
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• 2004

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5％ acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• Tribology and Lubricants
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• 제15권1호
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.801-804
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(Centrifugal Forming Process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder : binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shped microstructure with a well aligned c-axis direction from SEM images. Measured T$_{c}$(Critical temperature) was about 64 K.K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.189-192
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(centrifugal forming process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder:binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shaped microstructure with a well aligned c-axis direction from SEM images. T$_{c}$(Critical temperature) of Bi-2212 was 64K.K.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1998년도 제28회 추계학술대회
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• pp.272-277
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• 1998

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.158-161
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• 2003

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• 한국주조공학회지
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• 제22권2호
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• pp.82-88
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• 2002

Al-5.5Zn-2.5Mg-l.5Cu semi-solid slurry was prepared by cooling the liquid metal with a low superheat to a solid and liquid co-existing temperature. Relatively round solid particles could be obtained in the slurry through the simple process. The prepared slurry was deformed into the metallic mold by a press and the mechanical properties of obtained specimens were investigated. Mold filling ability of the alloy slurry was also investigated and compared with that of A356 alloy. Al-Zn-Mg-Cu alloy showed lower mold filling ability than A356 alloy probably because small amount of eutectic phase is present and the heat of fusion generated during solidification is smaller than that of A356 alloy.

• 한국정밀공학회지
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• 제17권1호
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• pp.179-184
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• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2001년도 학술대회 논문집
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• pp.25-28
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• 2001

Bi-2212 HTS tube was fabricated by centrifugal forming process(CFP). As a variation of melt casting process(MCP) or centrifugal casting technique, the centrifugal forming process is a flexible method for manufacturing Bi-2212 bulk tubes and has been optimized to achieve smooth surface and uniform thickness. At this process, the slurry was prepared in the mixing ratio of 10:1 between Bi-2212 powder and binder and initially charged into the rotating mold under the speed of 300~450 rpm Heat-treatment was performed at the temperature ranges of 860 ~ $890^{\circ}C$ in air for partial melting. The HTS tube fabricated by centrifugal forming process at $890^{\circ}C$ under the rotating speed of 450 rpm was highly densified and the plate-like grains with more than 20$\mu$m were well oriented along the rotating axis. The measured Tc and Jc at 10K were around 85K and 3,000A/cm2 respectively.