• 한국기계가공학회지
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• 제21권2호
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• pp.101-108
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• 2022

Centrifugal pumps are typically used in many slurry industries to transport solid materials. Solid particles in the slurry frequently shock the walls inside the pump, significantly abrading the flow path. Wear damage causes replacement of the pump components, which wastes manpower and time. Therefore, previous studies have been conducted on factors to improve efficiency and life time. This study identifies trends in pumps supplying lime to desulfurized devices from thermal power plants. The shear stress transport(SST) model is used to determine the erosion trend of the centrifugal pump that transfers lime slurry. The purpose of this study is to identify efficiency and erosion trends by selecting three of the various impeller design elements. The three impeller blade design variables mentioned above represent the inlet draft angle and blade angle of leading edge(L.E) and trailing edge(T.E). The maximum value of the erosion density rate tends to be similar to the Input power.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.163-166
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• 2006

The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

• 한국유기농업학회지
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• 제13권2호
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• pp.211-221
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• 2005

This experiment was conducted to evaluate the effect of animal slurry on nitrogen uptake of hairy vetch and growth of chinese cabbage in cropping system. Hairy vetch was seeded on September 20 in 2003 . We examined the effect of cover crop(hairy vetch (Vicia villosa Roth) and slurry application(0, l00, 200kg N/ha) on yield and N uptake. Dry matter yield and nitrogen uptake of hairy vetch were measured. The chinese cabbage succeeding cover crop was harvested in 2004. The nitrogen uptake of hairy vetch was 84, 121, 148kg N/ha respectively, when the slurry application was 0, 100 and 200kg N/ha. In addition. N uptake of hairy vetch at the plot of 100kg and 200 kg N/ha slurry were 44% and 76% higher than that of the plot without slurry application respectively. Slurry application of hairy vetch could increase nitrogen uptake by application of green manure at the harvesting time. the content of organic matter and P-content of soil with hairy vetch plot was higher than that of fallow plot due to inhibition of soil erosion. The organic matter levels tend to improve with the addition of hairy vetch. Hairy vetch could improve soil quality by reducing erosion compared with bare fallow. The green manure of hairy vetch with animal slurry maintained soil nutrient and reduced nitrogen fertilizer of chinese cabbage. The hairy vetch residues decomposed rapidly releasing half of their residues within 40 days after burial. The yield of chinese cabbage was 90% in the plot of manure of hairy vetch compared with chemical fertilizer. The yield in the plot treated with green manure of hairy vetch and 50% of chemical fertilizer was reduced 5% less than that of chemical fertilizer. Therefore, it was estimated that the green manure of hairy vetch-chinese cabbage cropping system could reduce nitrogen chemical fertilizer as much as 84~148kgN/ha. the green manure of hairy vetch with animal slurry maintained soil nutrient and reduced nitrogen fertilizer of chinese cabbage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• 한국정밀공학회지
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• 제18권12호
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• pp.192-199
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• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Corrosion Science and Technology
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• 제21권3호
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• pp.209-220
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• 2022

Erosion-corrosion behaviors of Hadfield steel under a neutral aqueous environment with fine SiO₂ particles were examined and compared with those of conventional carbon steel. A range of electrochemical experiments (potentiodynamic polarization, linear polarization, and impedance), immersion test, and slurry pot test (i.e., erosion-corrosion test) were performed. Results showed that the Hadfield steel composed of austenitic matrix with (Fe,Mn)-based carbide had lower corrosion potential and higher corrosion current density than carbon steel with a typical ferrite/pearlite structure. In addition, pipe forming increased total corrosion rates (i.e., pure corrosion and erosion-enhanced corrosion rates). Nevertheless, the erosion-corrosion rate of Hadfield steel was much smaller. Morphological observation showed that local damage in the form of a crater by erosion-corrosion was more noticeable in carbon steel. The higher resistance of Hadfield steel to erosion-corrosion was attributed to its lower total erosion rates (i.e., pure erosion and corrosion-enhanced erosion rates) highly depending on surface hardness. This study suggests that Hadfield steel with higher resistances to flowing erosion-corrosion in an aqueous environment can be applied widely to various industrial fields.