• Journal of the Korean Society of Industry Convergence
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• v.24 no.3
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• pp.283-288
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• 2021

A tungsten material using a pressure sintering process and a titanium sintering additive was prepared to evaluate the microstructure, and mechanical properties of flexural strength and hardness. In addition, the reliability on each hardness data was evaluated by analyzing the distribution of the hardness of the tungsten material using the Weibull probability distribution. In particular, the optimal manufacturing conditions were analyzed by analyzing the correlation between the sintering temperature and the mechanical properties of the tungsten sintered body. Although the sintering density of the tungsten material was hardly changed up to 1700 ℃, but it was increased at 1800 ℃. The hardness of the tungsten sintered material increased as the sintering temperature increased, and in particular, the tungsten material sintered at 1800 ℃ showed a high hardness value of about 1790 Hv. It showed relatively excellent flexural strength at a sintering temperature of 1800 ℃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.988-994
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• 1998

In the manufacturing of vitreous bonded CBN tool the porosity change associated with various processing conditions, I. e. the sintering temperature and the size and the amount of abrasive grits was observed. In the case of sintering of vitreous bond material only the specimen density reached the maximum at 950$^{\circ}C$ and then the total porosity was increased slightly with the temperature above 950$^{\circ}C$. In the sintering of a-brasive grits and the vitreous bond material together a marked increase in the total porosity was found with the temperature above 950$^{\circ}C$ Reducing the grit size at the constant volume fraction of abrasive grits showed an increase in the total porosity at whole sintering temperature. On the contrary. it was observed that increasing the volume fraction of abrasive grits with a same size showed the increased open porosity simultaneously with decreased closed porosity at whole sintering temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.957-968
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• 1994

Manufacturing process of porous glass by the filler method was studied. Commercial soda-lime-silicate glass powder was mixed with inorganic salt as the filler such as KCl, K2SO4, Na2SO4. Sintering shrinkages of mixed powders with the variation of sintering temperature were compared, and the effects of the fillers to shrinkages of mixed powder were increased in the order of Na2SO4${\mu}{\textrm}{m}$ of pore diameter were manufactured when the filler sizes 100~200 ${\mu}{\textrm}{m}$. The open pore volume of porous glass is determined by the quantity of filler and porous glasses having open pore volume between 30 and 70 vol% are available. Available sintering temperature range for preparation of porous glass is from the softening temperature of the glass powder to eutectic melting temperature of DTA curve of mixed powder.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.636-639
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• 2000

Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.906-910
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• 2008

$(K_{0.5}Na_{0.5})NbO_3$ (NKN) ceramics doped with $Li_{2}CO_3$ as sintering aids were manufactured in order to develop the low temperature sintering ceramics for piezoelectric device. The sintering aids were proved to lower the sintering temperature of doped NKN ceramics due to the effect of $Na_{2}CO_{3}-Li_{2}CO_3$ liquid phase. All the specimens showed the orthorhombic phase without secondary phase. And also, the piezoelectric properties of specimens were improved with increasing $Li_{2}CO_3$ contents. At sintering temperature of $930^{\circ}C$, the density, electromechanical coupling factor (kp), mechanical quality factor (Qm) and dielectric constant(${\epsilon}_{\gamma}$), piezoelectric constant of 0.3 wt.% $Li_{2}CO_3$ added specimen showed the optimum values of $4.255 g/cm^3$, 0.37, 234, 309, 136 pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.53-53
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• 2008

Piezoelectric transformers have been widely used such as DC-DC convertor, invertor, Ballast, etc. Because, the y have some merits compared with electro-magnetic transformers such as step-up ratio, high efficiency, small size and lg hit weight, etc. Piezoelectric transformer require high electromechanical coupling factor kp in order to induce a large out put power in proportional to applied electric field. And also, high mechanical quality factor Qm is required to prevent mechanical loss and heat generation. In general, PZT system ceramics should be sintered at high temperatures between 1200 and $1300^{\circ}C$ in order to obtain complete densification. Accordingly, environmental pollution due to its PbO evaporation. Hence, to reduce its sintering temperature, various kinds of material processing methods such as hot pressing, high energy mill, liquid phase sintering, and using ultra fine powder have been performed. Among these methods, liquid phase sintering is basically an effective method for aiding densification at low temperature. In this study, In order to comparis on low temperature sintering and solid state sintering piezoelectric transformers, rosen type transformers were fabricated u sing two PZT ceramics compositions and their electrical properties were investigated.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.5-10
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• 2003

Porous barium-strontium titanate ceramics were fabricated by adding corn- or potato-starch (are referred to as starch). The effect of sintering temperature on the microstructure and electrical properties of the porous ceramics was investigated. The room-temperature electrical resistivity of the barium-strontium titanate ceramics decreased with sintering temperature. The porosity and pore size were decreased and the grain size was increased with increasing the sintering temperature. The porosity and grain size of the barium-strontium titanate ceramics with corn-starch sintered at 1300 and 1450$^{\circ}C$ were 28.5, 22.6% and 3.2, 6.2 $\mu\textrm{m}$, respectively. The average pore sizes of the barium-strontium titanate ceramics with corn-starch sintered at 1300, 1400 and 1450$^{\circ}C$ were 0.5, 0.3 and 0.2 $\mu\textrm{m}$, respectively. The decrease in the room-temperature resistivity with increasing sintering temperature is attributed mainly due to the increase of grain size and the decrease of the electrical barrier height of grain boundaries as well as the partial decrease of porosity.