• Title/Summary/Keyword: Single-switching state

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Nanoscale Probing of Switching Behaviors of Pt Nanodisk on STO Substrates with Conductive Atomic Force Microscopy

  • Lee, Hyunsoo;Kim, Haeri;Van, Trong Nghia;Kim, Dong Wook;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.597-597
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    • 2013
  • The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb:STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb:STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

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Novel Single-State PWM Technique for Common-Mode Voltage Elimination in Multilevel Inverters

  • Nguyen, Nho-Van;Quach, Hai-Thanh;Lee, Hong-Hee
    • Journal of Power Electronics
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    • v.12 no.4
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    • pp.548-558
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    • 2012
  • In this paper, a novel offset-based single-state pulse width modulation (PWM) method for achieving zero common-mode voltage (CMV) and reducing switching losses in multilevel inverters is presented. The specific active switching state of the zero common-mode (ZCM) voltage that approximates the reference voltage can be deduced from the switching state sequence of the reduced CMV phase disposition PWM (CMV PD PWM) method. From the reference leg voltages for the zero common-mode voltage, an N-to-2-level transformation defines a virtual two-level inverter and the corresponding nominal leg voltage references. The commutation process of the reduced CMV PD PWM method in a multilevel inverter and its outputs can be simply followed in a nominal switching time diagram for the virtual inverter. The characteristics of the reduced CMV PD PWM and the single-state PWM for zero common-mode voltage are analyzed in detail in this paper. The theoretical analysis of the proposed PWM method is verified by experimental results.

Transflective Liquid Crystal Display using In-Plane Switching Mode (IPS 모드를 이용한 반투과형 액정 디스플레이)

  • Song, Je-Hoon;Lim, Young-Jin;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.153-156
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    • 2004
  • We have studied electro-optic characteristics of transflective liquid crystal display (LCD) using in-plane switching mode. Unlike previous transflective LCD using a dual gap structure and multi driving circuit, this transflective LCD has a single gap structure and a single driving circuit. In the voltage on state, the electric field is applied horizontally to the LC directors, and then homogeneously aligned LC directors at initial state is rotated to with the electric field. But the twist angle of the LC directors in reflective area is lower than transmissive area. As a result, it is possible to design the transflective LCD with a single gap and a single driving circuit. The transflective display associated with this LC cell exhibits a wide viewing angle in both reflective and transmissive areas.

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A Design of Variable Structure Controller for the General Single Input Systems with Unmeasurable State Variables (측정불가능한 상태변수를 갖는 일반적인 단일 입력 계통에 대한 가변구조 제어기의 설계)

  • 박귀태;최중경
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.7
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    • pp.773-783
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    • 1992
  • There have been several control schemes for the single input systems with unmeasurable state variables using variable structure control(VSC) theory. However, each of them is a study on the systems which can be represented in the phase canonical form or non-phase canonical form dynamic equation separately. As these control algorithms have difficulties in practical application by its theoretical limitations, in this paper we propose a new VSC theory which overcomes those limitations, in this paper we propose a new VSC theory which overcomes those limitations of proposed schemes. This new control scheme can be realized for the general linear systems which have unmeasurable state variables. And the switching function of this VSS algorithm consists of measurable state variable function(reduced-order switching function) and its derivatives. Also in the construction of control imput only measurable state variables are used.

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Carrier Based Single-State PWM Technique for Minimizing Vector Errors in Multilevel Inverters

  • Nho, Nguyen Van;Hai, Quach Thanh;Lee, Hong-Hee
    • Journal of Power Electronics
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    • v.10 no.4
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    • pp.357-364
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    • 2010
  • In this paper, a novel analysis of a carrier based PWM method for multilevel inverters is presented. The space vector PWM and carrier based PWM correlations in multilevel inverters are investigated in a nominal two-level switching diagram. The obtained results can be applied to design various carrier PWM techniques. In this paper, a carrier based single-state PWM technique, which reduces the switching number and optimizes the active voltage errors, is presented. This PWM technique can be advantageous if there are a large number of levels. The proposed method is mathematically formulated and demonstrated by simulations and experimental results.

Switching Characteristics of Amorphous GeSe TFT for Switching Device Application

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jo, Won-Ju;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.403-404
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    • 2012
  • We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

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Electrical Switching Characteristics of Thin Film Transistor with Amorphous Chalcogenide Channel

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.280-281
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    • 2011
  • We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

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Comparison of Three-Phase Voltage-Source PWM Converters Using a Single Current Sensor (단일 전류 센서를 사용한 3상 전압형 PWM 컨버터의 제어 방식 비교)

  • Lee, Woo-Cheol;Lee, Taeck-Kie;Hyun, Dong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.4
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    • pp.188-200
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    • 2001
  • This paper presents a technique for reconstructing converter line currents using the information from a single current sensor in the DC-link for voltage-source PWM converters. When three-Phase input currents cannot be reconstructed, three methods to acquire the input current are compared. Two of them are methods of modifying the switching state (I, II), another is a method of using the predictive state observer. Also, compensation of sampling delay, and a simultaneous sample value of input currents in the center of a switching period are included. Suitable criteria for the comparison are identified, and the differences in the performance of these methods are investigated through experimental results for a typical V-S PWM converter rated at 10kVA.

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The Design of Variable Structure Controller for the System in Phase Canonical Form with Incomplete State Measurements (비 측정 상태변수를 갖는 위상 표준형계통에 대한 가변구조 제어기의 설계)

  • 박귀태;최중경
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.8
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    • pp.902-913
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    • 1992
  • There have been several control schemes for the single input systems with unmeasurable state variables using variable structure control(VSC) theory. In the previous VSC, the systems must be represented in phase canonical form and the complete measurements for each state variable must be assumed. In order to eliminate these restrictions several VSC methods were proposed. And especially for the systems in phase canonical form with unmeasurable state variables, the reduced order switching function algorithm was proposed. But this method has many drawbacks and can not be used in the case of general form (not phase canonical form) dynamic system. Therefore this paper propose new construction method of switching fuction for the systems in phase canonical form, which reduce the restriction of reduced order switching function algorithm. And this algorithm can be realized for any state representation and adopted in the systems where not all states are available for switching function synthesis or control.

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Adaptive Mode Switching in Correlated Multiple Antenna Cellular Networks

  • Lee, Chul-Han;Chae, Chan-Byoung;Vishwanath, Sriram;Heath, Jr., Robert W.
    • Journal of Communications and Networks
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    • v.11 no.3
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    • pp.279-286
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    • 2009
  • This paper proposes an adaptive mode switching algorithm between two strategies in multiple antenna cellular networks:A single-user mode and a multi-user mode for the broadcast channel. If full channel state information is available at the base station, it is known that a multi user transmission strategy would outperform all single-user transmission strategies. In the absence of full side information, it is unclear what the capacity achieving method is, and thus there are few criteria to decide which of the myriad possible methods performs best given a system configuration. We compare a single user transmission and a multi user transmission with linear receivers in this paper where the transmitter and the receivers have multiple antennas, and find that neither strategy dom inates the other. There is instead a transition point between the two strategies. Then, the mode switching point is determined both ana lytically and numerically for a multiple antenna cellular downlink with correlation between transmit antennas.