• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1996년도 봄 학술발표회 논문집
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• pp.1-8
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• 1996

Many studies showed that small imperfections can also have a considerable influence on the behaviour of structures. Especially, in Single-Layer Latticed Domes, initial imperfection occurred by human error and construction error is very important to the buckling load. The definition of imperfection is that a node of structure shifts from perfect condition. For example, in the case of truss structures, imperfections are represented by shifting the location of nodal points relative to the position in which they would be for a perfect structure. This paper uses Arc-length Method in nonlinear iteration analysis, choosing star dome, in which many studies have been accomplished, as a model. The results of analysis show that initial imperfection can reduce the buckling load of structures.

• Structural Engineering and Mechanics
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• 제5권6호
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• pp.775-784
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• 1997

A unified theory is presented for the shape analysis of curved surface with a single layer structure composed by frame, membrane or shell. The shapes produced by the theory have no shear stress in elements, and the stress states in the whole shape are as uniform as possible under an ordinary load. The theory starts from defining an element potential function expressed by the measurement of the element length or the element area. Therefore, the shape analysis can produce various forms according to the definition of the potential function, and each of those form or the cable net form with the potential function of the second power of element length is simply gotten by the linear analysis. The form in tensile stress is mechanically equal to an isotropic tension form.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• 정보학연구
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• 제8권1호
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• pp.51-56
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• 2005

The Back propagation algorithm is a very effective supervised training method for multi-layer feed forward neural networks. This paper studies the decision boundary formation based on the Back propagation algorithm. The discriminating powers of several neural network topology are also investigated against five manually created data sets. It is found that neural networks with multiple hidden layer perform better than single hidden layer.

• 한국자기학회지
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• 제27권4호
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• pp.115-122
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• 2017

반강자성체인 IrMn 박막이 삽입된 4가지 다른 유형으로 GMR-SV 다층박막을 Corning glass 위에 이온빔 증착 시스템과 DC 마그네트론 스퍼터링 시스템으로 제조하였다. 모든 박막시료는 진공 열처리 후 측정한 major 및 minor 자기저항(MR) 곡선으로부터 자기적 특성을 조사하였다. IrMn 박막이 삽입된 상부층의 이중구조(dual-type structure) GMR-SV 다층박막에서 고정층의 교환결합력($H_{ex}$)과 보자력($H_c$), 자유층의 보자력과 상호교환결합력($H_{int}$)은 각각 410 Oe, 60 Oe, 1.6 Oe, 7.0 Oe이었다. 2개의 자유층에 의한 히스테리시스 곡선은 안정된 사각비를 형성하였으며, 자기저항비(MR(%))는 3.7 %와 5.0 %의 합으로 8.7 %이었다. 그리고 평균 자장민감도(MS)가 2.0 %/Oe을 유지하고 있었다. 반면에 IrMn 박막이 삽입된 하부층의 단일구조와 이중구조 GMR-SV 다층박막의 자기적 특성은 IrMn 박막이 삽입된 상부층의 단일구조와 이중구조 GMR-SV 다층박막보다 훨씬 저하하게 나타내었다. 이중구조 GMR-SV 다층박막의 강자성체인 고정층과 자유층의 자화 스핀배열을 서로 반평행 상태에서 독립적인 이중 스핀 의존산란(Spin-dependent Scattering) 효과에 의해 MR은 최대값을 나타내었다.

• 전자공학회논문지A
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• 제30A권6호
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• Membrane and Water Treatment
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• 제5권2호
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• pp.109-122
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• 2014

Polyvinylidene fluoride (PVDF) hollow fiber membrane is widely used for water treatment. However, the weak mechanical strength of PVDF limits its application. To enhance its tensile strength, a double-layer composite hollow fiber membrane, with PVDF and polyetherimide as the external and inner layers, respectively, was successfully prepared through phase inversion technique. The effects of additive content, air gap distance, N,N-dimethyl-acetamide content in the inner core liquid, and the temperature of external coagulation bath on the membrane structure, permeation flux, rejection, tensile strength, and porosity were determined. Experimental results showed that the optimum preparation conditions for the double-layer composite hollow fiber membrane were as follows: PEG-400 and PEG-600, 5 wt%; air gap distance, 10 cm; inner core liquid and the external coagulation bath should be water; and temperature of the external coagulation bath, 40 C. A single layer PVDF hollow fiber membrane (without PEI layer) was also prepared under optimum conditions. The double-layer composite membrane remarkably improved the tensile strength compared with the single-layer PVDF hollow fiber membrane. The permeation flux, rejection, and porosity were also slightly enhanced. High-tensile strength hollow fiber PVDF ultrafiltration membrane can be fabricated using the proposed technique.

• 한국표면공학회지
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• 제30권1호
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• pp.23-32
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• 1997

The electrolytic boronizing on carbon steels in the mixture of $Na_2B_4O_7$ and NaCl was conducted at 750~$950^{\circ}C$ for 1~6 hours under 0.5A/$\textrm{cm}^2$ current density. The micorostructrure and microheredness of boronized layer was also studien. The effect of the additive such as $CaCl_2$ or NaOH on the formation of boronized layer was also investigated. The boronized layer were composed of two sublayers, i.e., FeB and $Fe_2B$ , which have tooth structure. the average layer thinknesses of the low carbon steel and SM45C boronized at $900^{\circ}C$ for 4hours were 153 and 138 $\mu\textrm{m}$, respectively. The thickness of the twosublayers was significantly increased with increasing boronizing temperature. To obtain a single $Fe_2B$ layer without FeB sublayer, the boronized materials ware homegenized at $950^{\circ}C$ for 4 hours. It was fount that the single layer with a microhardness Hv$\thickapprox$ 1120 -1250 was formed. The calculated activation energies for formation of boronized layer on the low carbon steel and SM45C were 18.7 and 12.6 Kcal/mol, respectively.