• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.833-839
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• 2011

This paper has suggested a technique for measuring VSWR at 1.8 GHz band for various modulated signals. By using directional coupler the power of incident and reflected wave is measured, and in order to minimize the size and cost of the measuring circuit, a SPDT(Single Pole Double Throw) switch is adopted to realize the circuit with just one detector and one A/D(Analog to Digital) converter. MCU(Micro Control Unit) is used to calculate the voltage reflection coefficient and VSWR, and the measured VSWR error has improved by approximately 0.2 with applying a simple bubble sorting algorithm to reduce the measurement error, the MCU process time and load.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.511-519
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• 2016

This paper proposes a CMOS 6-bit phase shifter with low RMS phase and amplitude errors for an X-band phased array antenna. The phase shifter combines a switched-path topology for coarse phase states and a switch-filter topology for fine phase states. The coarse phase shifter is composed of phase shifting elements, single-pole double-throw (SPDT), and double-pole double-throw (DPDT) switches. The fine phase shifter uses a switched LC filter. The phase coverage is $354.35^{\circ}$ with an LSB of $5.625^{\circ}$. The RMS phase error is < $6^{\circ}$ and the RMS amplitude error is < 0.45 dB at 8-12 GHz. The measured insertion loss is < 15 dB, and the return losses for input and output are > 13 dB at 8-12 GHz. The input P1dB of the phase shifter achieves > 11 dBm at 8-12 GHz. The current consumption is zero with a 1.2-V supply voltage. The chip size is $1.46{\times}0.83mm^2$, including pads.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.1 s.343
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• pp.143-148
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• 2006

This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.22 no.6
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• pp.223-229
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• 2023

This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

• ETRI Journal
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• v.31 no.3
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• pp.342-344
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• 2009

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.60-63
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• 2003

This paper describes the design and the simulation of a V-band single pole double throw (SPDT) FET switch fur millimeter-wave applications using drain impedance transformation network with CPW transmission line. The designed switch has about 10% bandwidth at 60GHz. Insertion loss is better than 3dB fur the ON state and Isolation is larger than 30dB fer the OFF state. The maximum isolation is 43.4dB at 60GHz with input power of 10dBm. The yield analysis is done considering the effects of pHEMT variations.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• Journal of Korea Multimedia Society
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• v.25 no.8
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• pp.1038-1048
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• 2022

Ultrasound is one of the effective methods for skin treatment. The skin penetration depth of the ultrasound depends on the ultrasonic frequency, that is, when the ultrasonic frequency is high, the depth is shallow. We have developed a transducer which can generate effectively 3 different ultrasonic frequencies removing interference between 3 types of frequencies according to impedance matching technology. The generated powers of transducer are 40.67W at 3.MHz, 17.46W at 11.7 MHz, and 14.79W at 21.5 MHz. The signal interference between the three frequencies is designed so that they do not interfere with each other by separating the signals using the SPDT (Single Pole, Double Throw) switch. The developed hybrid ultrasound transducer can be applied in skin care or skin treatment and beauty therapy.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.