• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.6
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• pp.764-769
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• 2014

This paper describes sheath voltage limiter(SVL) transient characteristics by switching overvoltage considering single point bonding in underground transmission cables. The crossbonding system is generally used for grounding methods of underground transmission system. However, the single point bonding system is used in selective area which is difficult to consist of crossbonding major section. The sheath voltage limiters are connected between joints in the single point bonding. Specially, the high overvoltage might be generated in that section as well as the aging of sheath voltage limiter might be progressed by various electrical stress including lightning overvoltage, switching overvoltage and power frequency overvoltage. Therefore, in this paper, the switching overvoltage characteristics in underground cables are firstly analysed using EMTP simulation. Then, the switching overvoltage of sheath voltage limiter is also studied in single point bonding. Finally, the reduction method of sheath voltage limiter switching overvoltage is proposed by various simulation studies including circuit breaker operating order.

• Proceedings of the KIEE Conference
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• 2008.11a
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• pp.119-121
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• 2008

In underground power cable system, the device for limiting over-voltage is needed when transient over-voltage break out between sheath and ground. For this reason, the SVL(Sheath Voltage Limiter) has been applied on weak points. But the broken SVLs which are installed on the single point bonding system on underground cable are frequently found. In this paper, EMTP(Electromagnetic Transient Program) is utilized to analyze effects on the installation methodology of the parallel ground conductor and SVL for the single point bonding system on the underground cable. The result shows that the proposed installation methodology can be applied for single point bonding system and contribute for power system stabilization.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.736-737
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• 2007

The single point bonding in underground transmission system can induce high voltage on the sheath when ground fault, lightning serge and switching serge occurs, at that time underground cable systems cannot offer a return path of fault current. Accordingly if fault current, which cannot return to ground, flows at the single point bonding, high voltage can be induced in SVL and that voltage can cause aging and breakdown of SVL. Therefore this paper study on the effect of parallel ground conductor at the single point bonding when ground fault and lightning serge occurs by using ATPDraw.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.470-471
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• 2008

SVL is installed at underground transmission system to protect cables and insulation joint-box from overvoltages caused by lightning, switching, and line-to-ground fault. Domestic underground power system adopts cross bonding type to reduce the induced voltage at sheath, but single-point bonding is required depending the system installation configuration. SVL can be easily broken by overvoltages induced at joint-box because single-point bonding has uneffective system structure to extract fault current. ANSI/IEEE recommends Parallel Ground Continuity Conductor(PGCC) to prevent SVL breakdown. In this paper, EMTP simulation is performed to analyze effects on SVL under PGCC installation when single-line-to-ground fault occurs. The result shows that PGCC and short single-point bonding distance can reduce overvoltages at SVL.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Proceedings of the KIEE Conference
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• 2005.07a
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• pp.15-17
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• 2005

The protection of underground cables against transient overvoltages resulting from lightning and other causes is important in cable-line which is connected with overhead line and underground cable. This paper investigates the failure of SVL(Sheath Voltage Limiter) and presents the application of protection methods for single point bonding on underground transmission cable system. EMTP(Electromagnetic Transient Program) is used in order to study the overvoltages and modeling of components of the system such as, underground cables, SVLs and towers.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.529-533
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• 2008

Mission Computer performs important role both managing a whole system and dealing with a specific mission in avionics system. In general, the fault of SPOF(Single Point Of Failure) in unity system can lead to failure of whole system. It can cause a failure of a mission and also can threaten to the life of the pilot. So, in this paper, we design the HA(High-availability) system so that dealing with the failure. And we use HA software like Heartbeat, Fake, DRBD and Bonding to managing HA system.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.76-83
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• 2010

Metallic sandwich panels with pyramidal truss structures are high-stiffness and high-strength materials with low weight. In particular, bulk structures have enough space for additional multi-functionalities. In this work, in order to fabricate 3-D structures efficiently, Layered Manufacturing Method (LMM) which was composed of three steps, including crimping process, stacking process and bonding process using rapid infrared brazing, was proposed. The joining time was drastically reduced by employing infrared brazing of which heating rate and cooling rate were faster than those of conventional furnace brazing. By controlling the initial cooling rate slowly, the bonding strength was improved up to the level of strength by conventional vacuum brazing. The observation of infrared brazed specimens by optical microscope and SEM showed no defect on the joining sections. The experiments of 1-layered pyramidal structures and 2-layered pyramidal structures subject to 3-point bending were conducted to determine structural advantages of multilayered structures. From the results, the multi-layered structure has superior mechanical properties to the single-layered structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.139-139
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• 2012

With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.