• Title/Summary/Keyword: Single crystals

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Synthesis and Crystal Structure of a New Pentanary Thiophosphate, K0.5Ag0.5Nb2PS10

  • Dong, Yong-Kwan;Kim, Sang-Rok;Yun, Ho-Seop;Lim, Han-Jo
    • Bulletin of the Korean Chemical Society
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    • v.26 no.2
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    • pp.309-311
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    • 2005
  • Single crystals of the new pentanary thiophosphate, $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ has been prepared through reactions of the elements with halide fluxes. The structure of $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ has been analyzed by single crystal X-ray diffraction technique. The structure of $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ is made up of one-dimensional ${^{\infty}_1}[Nb_2PS_{10}]$ chains along the [001] direction and these chains are separated from one another by $Ag^+$ and disordered $K^+$ ions. This chain is basically built up from bicapped trigonal prismatic [Nb2S12] units and tetrahedral [PS4] groups. The [$Nb_2S_{12}$] units are connected together to form the linear chain, ${^{\infty}_1}[Nb_2S_9]$ by sharing the S-S prism edge. Short (2.885(2) $\AA$ or 2.888(2) $\AA$) and long (3.743(1) $\AA$) Nb-Nb distances are alternating along the chain, and the $S_2{^2-}]\;and\;S^{2-}$anionic species are observed. The distorted octahedral coordination around the $Ag^+$ ion can be described as [2+4] bonding interaction.

Photoluminescience Properties and Growth of $CdIn_2Te_4$ Single crystal by Bridgman method (Bridgman법에 의해 $CdIn_2Te_4$ 단결정 성장과 광발광 특성)

  • Hong, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.278-281
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    • 2003
  • The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

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Measurement of nonlinear optical constant of organic single crystal para-toluene sulfonate prepared by slow solution evaporation method (늦은 용액증발법으로 제작한 유기단결정 para-toluene sulfonate의 비선형 광학상수 측정)

  • 황보창권
    • Korean Journal of Optics and Photonics
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    • v.9 no.2
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    • pp.76-85
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    • 1998
  • Organic single crystal of p-toluene sulfonate(PTS) bulks and thin films were fabricated using a slow solution evaporation method. Third and fifth order nonlinear refractive indices, $n_2$and $n_3$, of PTS crystals at 1600 nm were determined by the Z-scan method and the multimode output of the PTS thin film waveguide was observed at 1350 nm. When the beam intensity is in 2-5 GW/$cm^2$, the nonlinear refractive indices are $n_{2}=6{\times}10^{-4}cm^{2}$/GW and $n_{3}=-7{\times}10^{-5}cm^{4}/GW^{2}$ and the two and three photon absorption coefficients are zero. When the beam intensity is in 5~16 GW/$cm^2$, the split-step fast Fourier transform beam propagation method simulation shows that the beam propagation in the PTS is distorted from the gaussian shape.

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Characterization of Li+-ion Exchanged Zeolite Y using Organic Solvents

  • Kim, Hu Sik;Lee, Seok Hee;Park, Kyun Hye;Park, Yong Hyun;Park, Jun Woo;Hwang, Ji Hyun;Park, Jong Sam;Choi, Sik Young;Lim, Woo Taik
    • Korean Journal of Soil Science and Fertilizer
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    • v.48 no.3
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    • pp.180-188
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    • 2015
  • To investigate the tendency of $Li^+$ exchange from polar organic solvents, $Li^+$-ion exchange into zeolite Y (Si/Al = 1.56) was attempted by undried methanol (crystal 1) and formamide (crystal 2) solvent. Two single crystals of Na-Y were treated with 0.1 M LiNO3 in each of the two solvents at 323 K, followed by vacuum dehydration at 723 K. Their structures were determined by single-crystal synchrotron X-ray diffraction techniques in the cubic space group $Fd{\bar{3}}m$, at 100(1) K. In both structures, $Li^+$ for $Na^+$ ions filled preferentially sites I' and II. The remaining $Na^+$ ions occupied sites I', II, and III' in both structures, in additional to above sites, and $Na^+$ ions occupied site I in crystal 2. While the 68 % exchange of $Li^+$ for $Na^+$ was achieved from undried methanol, only 40 % exchange was observed from undried formamide, indicating that the undried methanol was more effective than undried formamide as solvent for $Li^+$ exchange under the conditions employed.

Photoluminescience properties for CdIn2Te4 single crystal grown by Bridgman method

  • Hong, Myung-Seok;Hong, Kwang-Joon;Kim, Jang-Bok
    • Journal of Sensor Science and Technology
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    • v.15 no.6
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    • pp.379-385
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    • 2006
  • Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

Congruent Melt Composition of $LiTaO_3$ Single Crystal ($LiTaO_3$ 단결정의 완전용융조성)

  • 정대식;박병학;김유성;노용래
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.2
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    • pp.99-106
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    • 1993
  • A relationship $(T_c = -17.869C^2+1840.2C-46623)$ between Curie Temperature$(T_c)$ and (C), $Li_2O$ mole percent(%) was established from the measurement results of Curie temperature $(T_c)$) analysed by DTA(Differential Thermal Analysis) in the range from 48.50 to 49.00 $Li_2O$ mole %. Congruent melt composition of $LiTaO_3$ single crystal was to be 48.65 $Li_2O$ mole % and its Curie temperature was also determined to be $610{\pm}1^{\circ}C$ from the results of Curie temperature difference, ${\Delta}T (T_{c(Top)}-T{_c(Tail)})$ of Czochralski grown $LiTaO_3$ crystals and the distribution coefficient(k). The k was calculated from $LiO_2$ mole ratio of initial melt to final melt and initial crystal to final crystal in the range from 48.60 to 48.70 $Li_2O$ mole %.

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GaAs Epitaxial Layer Growth by Molecuar Beam Epitaxy (MBE에 이한 GaAs 에피택셜층 성장)

  • 정학기;이재진
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.34-40
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    • 1985
  • Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

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The Crystal Growth of $Bi_{12}GeO_{20}$ Single Crystal by the CZ Technique with New Weighing Sensor (II) (새로운 무게센서에 의한 $Bi_{12}GeO_{20}$ 단결정 육성연구(II))

  • 장영남;배인국
    • Korean Journal of Crystallography
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    • v.9 no.1
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    • pp.30-38
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    • 1998
  • A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

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Single Crystal Growth of $(TeO_2)$ by CZ Technique (용액인상법에 의한 파라텔루라이트 $(TeO_2)$ 단결정 육성)

  • Sohn, Wook;Jang, Young-Nam;Bae, In-Kook;Chae, Soo-Chun;Moon, H-Soo
    • Korean Journal of Crystallography
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    • v.6 no.2
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    • pp.141-157
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    • 1995
  • Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

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Crystallographic Study on Zeolite 4A Reacted with Rubidium Vapor (루비듐 증기와 반응한 제올라이트 4A에 대한 결정학적 연구)

  • Song, Seong-Hwan;Kim, Yang;Han, Young-Wook
    • Journal of the Mineralogical Society of Korea
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    • v.4 no.2
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    • pp.99-107
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    • 1991
  • Three fully dehydrated fully Rb+-exchanged zeolite A single crystals have been prepared by the reduction of all Na+ ions in dehydrated Na12-A by rubidium vapor at various experimental conditions (220 $\leq$ T $\leq$ 33$0^{\circ}C$, 2 $\leq$ t $\leq$24 hours, and 0.1 $\leq$ PRb $\leq$ 1.1 Torr). Their structures were determined by single-crystal X-ray diffraction methods in the space group {{{{ RHO }}m3m (a=12.245(3) A) at 22(1)$^{\circ}C$. In these structures 12.6(2) to 13.5(2) Rb species are found per unit cell, more than the 12 Rb+ ions needed to balance the anionic charge of the zeolite framework, indication that the sorption of Rb0 has occurred. In each structure, three Rb+ ions per unit cell are located at the centers of 8-rings. Beyond that, the fractional occupancies observed are simply explained by two unit cell arrangments. In one, two Rb+ ions are in the sodalite unit near opposite 6-rings, six are in the large cavity near 6-ring, and one is in the large cavity near a 4-ring. In the other, three Rb species in the sodalite cavity (forming a triangle 3.7 A on an edge) each bond (3.4 A) through a 6-ring to an Rb species in the large cavity to give an (Rb6)4+ cluster of symmetry 3m (C3V). Five additional Rb+ ions fill the remaining large-cavity 6-ring sites.

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