• 한국초전도학회:학술대회논문집
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• v.16
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• pp.41-41
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• 2006

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2011.03a
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• pp.62-62
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• 2011

Intramolecular charge transfer (ICT) system has received great attentions due to their promising optoelectronic properties For the efficient ICT of the chromophore, their organic compound mainly consists of strong electron donors (e.g. $NR_2$ or OR groups) and acceptors (e.g. CN or $NO_2$ groups). According to the molecular design and synthesis, the ICT compounds can be extended in many application fields. In this study, we have synthesized ICT compounds having a strong electron acceptor and donor. These novel ICT compounds were easily synthesized by a previously described method with some modifications. Their single crystals were grown and their structures were solved and described in this presentation.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.254-258
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• 1992

Iodine 화학수송법으로 성장한 Ni-doped CdGa2Se4와 undoped CdGa2Se4 단결정 의 PL 및 PLE 스펙트럼을 조사하였다. Undoped CdGa2Se4 단결정의 PL 스펙트럼에서는 전도대아래 준 연속적으로 분포된 electron trap과 deep level, 그리고 가전자대 위 0.07eV, 0.12eV에 있는 acceptor level 사이의 전자전이에 의한 2개의 emission band를 2.13eV와 1.20eV 영역에서 관측하였으며, Ni-doped 단결정에서는 Ni2+ 이온의 여기상태 3T1(3P)와 바 닥상태 3T1(3F) 사이의 전자전이에 의한 emission band를 1.48eV 영역에서 관측하였다. 이 러한 결과로부터 제안된 CdGa2Se4의 energy band model은 본 연구의 PL mechanism을 설명하는데 가능함을 보여주었다.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.244-253
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• 1992

BiSI, BiSI : Co, BiSeI 및 BiSeI : Co 단결정을 고순도의 성분원소와 8.6mole% 과잉의 Iodine를 투명석영관내에 넣고 진공봉입하여 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정은 orthorhombic 구조였고, energy band 구 조는 간접전이형으로 293K에서 광학적 energy gap은 각각 1.590eV, 1.412eV, 1.282eV 및 1.249eV로 주어지며, energy gap의 온도의존성은 Varshni 방정식으로 잘 표현된다. Cobalt 를 첨가할 때 나타나는 불순물 광흡수 peak는 Td symmetry점에 위치한 Co2+, Co3+ ion의 energy 준위들 사이의 전자전이에 의해서 나타난다.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.111-118
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• 2008

The mechanism of charge flow has been probed by measuring the $^{1}H$ chemical shift on a proton-irradiated ${KH_2}{PO_4}$ (KDP) single crystal. The proton irradiation caused the increase in $^{1}H$ chemical shift. It can be interpreted as the electronic charge transfer from the proton to oxygen atom, accompanied with the proton displacement along the hydrogen bond. For the high resolution $^{1}H$ chemical shift measurement, CRAMPS (Combined Rotation And Multiple Pulses) technique is utilized.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.74-80
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• 2008

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing electron magnetic resonance(EMR), Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of $2{\times}10^{17}$ neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, $A_1$(TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much broader or was much more broadened than that for the unirradiated one. The observed EMR center with the g value of 1.952 in a neutron irradiated Si-doped GaN may be assigned to a Si-related complex donor.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.239-246
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• 1994

Cd1-xCoxIn2Se4($\chi$=0.000, 0.001, 0.005, 0.10, 0.50) 단결정을 수직 Bridgman 방법으로 성장시키고 성장된 단결정의 조성 및 결정구조를 조사하고 광학적 특성을 연구하였다. 성장된 단결정은 pesudocubic 구조이고 격자상수는 조성$\chi$가 증가함에 따라 약간씩 감소하였다. 기초 흡수단 영역에서의 광흡수 spectra 측정에서 이 단결정들은 간접전이 및 직접전이 및 직접전이 energy gap을 갖고 있으며 이들 energy gap의 조성의존성은 조성이 $\chi$=0.00에서 $\chi$=0.016까지는 기울기가 같고 $\chi$=0.016에서 기울 기가 변화되어서 $\chi$=0.016에서 $\chi$=0.50까지는 같은 기울기를 갖고 있다. 이러한 현상은 $\chi$=0.016에서부터 CdIn2Se4 내에 cobalt를 포함한 새로운 물질이 형성되고 이 물질과 a-CdIn2Se4 사이에 고체고용체를 형 성하기 때문이다.

• Interaction and multiscale mechanics
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• v.4 no.2
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• pp.139-153
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• 2011

In this paper we develop a fully anisotropic pressure and temperature dependent model to investigate the effect of the microstructure on the shock response of ${\beta}$-HMX molecular single and polycrystals. This micromechanics-based model can account for crystal orientation as well as crystallographic twinning and slip during deformation and has been calibrated using existing gas gun data. We observe that due to the high degree of anisotropy of these polycrystals, certain orientations are more favorable for plastic deformation - and therefore defect and dislocation generation - than others. Loading along these directions results in highly localized deformation and temperature fields. This observation confirms that most of the temperature rise during high rates of loading is due to plastic deformation or dislocation pile up at microscale and not due to volumetric changes.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.119-123
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• 1995

Bridgman 방법으로 성장한 InSe: Co 단결정의 근적외 영역에서의 광흡수 특성을 상온에서 조사하였다. 1350, 1530, 1710nm 파장영역에서 Td 대칭을 갖는 Co2+ 이온의 4A2(4F)$\longrightarrow$4T1(4F)전이에 대응되는 3개의 흡수 peak를 관측하였다. 이 미세구조는 스핀-궤도 결합효과에 의하여 분리된 Co2+ 이온의 4T1(4F) 준위의 $\Gamma$6, $\Gamma$8, $\Gamma$7+$\Gamma$8 준위와 바닥상태 4A2(4F)의 $\Gamma$8 준위 사이의 전자전이에 기인하며, 결정장이론에 의하여 잘 설명되었다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.169-172
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• 1998

A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.