• Progress in Superconductivity
• /
• v.4 no.1
• /
• pp.14-18
• /
• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• Current Photovoltaic Research
• /
• v.6 no.4
• /
• pp.94-101
• /
• 2018

Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.98-102
• /
• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.2
• /
• pp.167-171
• /
• 2014

Using chemical vapor deposition(CVD), the synthesis of graphene was performed on poly and single crystalline Cu substrates. The growth behavior of graphene and its characterization were shown utilizing the optical microscopic image and its image analysis. As a result in the analysis of graphene growth, it was found out the graphene is growing always in particular direction in relation to the crystalline direction of a single grain in polycrystalline Cu substrate. With the image analysis it was possible to show the characterization of graphene, such as the growth direction and the number of layers showing single, double and triple layers, within the neighboring single grains in polycrystalline Cu. In addition, the relatively large area of graphene with about $3mm^2$ on Cu(111) having high quality, single layer, and single crystalline was shown along with its characterization.

• Macromolecular Research
• /
• v.12 no.2
• /
• pp.189-194
• /
• 2004

When water is evaporated quickly from a water-based colloidal suspension, colloidal particles protrude from the water surface, distorting it and generating lateral capillary forces between the colloidal particles. The protruded colloidal particles are then assembled into ordered colloidal crystalline domains that float on the water surface on account of their having a lower effective density than water. These colloidal crystal domains then assemble together by lateral capillary force and convective flow; the generated colloidal crystal has grain boundaries. The single domain size of the colloidal crystal could be controlled, to some extent, by changing the rate of water evaporation, but it seems very difficult to fabricate a single crystal over a large area of the water's surface without reorienting each colloidal crystal domain. To reorient such colloidal crystal domains, a glass plate was dipped into the colloidal suspension at a tilted angle because the meniscus (airwaterglass plate interface) is pinned and thinned by further water evaporation. The thinning meniscus generated a shear force and reoriented the colloidal crystalline domains into a single domain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.234-234
• /
• 2010

Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.132-135
• /
• 2000

Magneto-resistances of the YBa$_2$Cu$_3$O$_{7-{\delta}}$ based coated conductors fabricated on the tilted single crystalline Ni substrates and RABiTS (rolling assisted bi-axially textured substrate) were measured under various magnetic fields. The activation energies of vortices were estimated from them by fitting equation of p = p$_o$ exp(-U(H,T)/k$_B$T). When currents flew in the rolling direction for the case of the tilted single crystalline YBCO on the RATS, the activation energies were similar to those of c-axis normal YBCO films on the SrTiO$_3$ single crystal substrates [5] and were slightly larger than those of the RABiTS coated conductors. On the contrary, for the currents flowing in the transverse direction, the magnetoresistances show double transitions in the temperature with much smaller activation energies.

• Proceedings of the KSR Conference
• /
• 2000.05a
• /
• pp.250-257
• /
• 2000

A Helmholtz free energy for a martensitic transformation of a single crystalline shape-memory alloy is obtained by a micromechanical approach, 24 variants of the single crystal are taken into account. In the framework of irreversible thermodynamics, a kinetic relation, a martensitic nucleation criterion and the reorientation criterion of martensitic variants are obtained. These relations are valid for a three-dimensional proportional or non-proportional mechanical loading or a combination of mechanical and thermal loading. Reorientation behavior of a single crystalline shape-memory alloy CuZnAl is simulated. When a tensile load is applied to a thermally-induced martensite, 24 self-accommodated martensitic variants are reoriented to the most favorable variant. In the following unloading, the most favorable variant in the tensile load is reoriented to the most favorable variant in this loading condition.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.131-135
• /
• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of Electrical Engineering and Technology
• /
• v.2 no.2
• /
• pp.274-279
• /
• 2007

This study focuses on the enhancement of maskless photolithography as well as the peptide synthesis application with single crystalline silicon micromirrors. A single crystalline silicon micromirror array has been designed and fabricated in order to improve its application to the peptide synthesis. A micromirror rotates about ${\pm}\;9^{\circ}$ at the pull-in voltage, which can range from 90.7 V to 115.1 V. A $210\;{\mu}m-by-210\;{\mu}m$ micromirror device with $270\;{\mu}m$ mirror pitch meets the requirements of an adequately precise separation for peptide synthesis. Synthetic 16 by 16 peptide array corresponds to the same number of micromirrors. The large size of peptide pattern and the separation facilitate biochip experiments using fluorescence assay. The peptide pattern has been synthesized on the GPTS-PEG200 surface with BSA-blocking and thereupon the background was acetylated to reject non-specific bindings. Hence, an averaged slope at the pattern edge has been distinguishably improved in comparison to patterning results from an aluminum micromirror.