• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of Life Science
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• v.16 no.1
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• pp.37-43
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• 2006

Gap junction is an ion channel forming between adjacent cells. It also acts as a membrane channel like sodium or potassium channels in a single cell. The amino acid residues up to the $10^{th}$ position in the amino (N)-terminus of gap junction hemichannel affect gating polarity as well as current-voltage (I-V) relation. While wild-type Cx32 channel shows negative gating polarity and inwardly rectifying I-V relation, T8D channel in which threonine residue at $8^{th}$ position is replaced with negatively charged aspartate residue shows reverse gating polarity and linear I-V relation. It is still unclear whether these changes are resulted from the charge effect or the conformational change of the N-terminus. To clarify this issue, we made a mutant channel harboring cysteine residue at the $8^{th}$ position (T8C) and characterized its biophysical properties using substituted-cysteine accessibility method (SCAM). T8C channel shows negative gating polarity and inwardly rectifying I-V relation as wild-type channel does. This result indicates that the substitution of cysteine residue dose not perturb the original conformation of wild-type channel. To elucidate the charge effect two types of methaenthiosulfonate (MTS) reagents (negatively charged $MTSES^-$ and positively charged $MTSET^+$) were used. When $MTSES^-$ was applied, T8C channel behaved as T8D channel, showing positive gating polarity and linear I-V relation. This result indicates that the addition of a negative charge changes the biophysical properties of T8C channel. However, positively charged $MTSET^+$ maintained the main features of T8C channel as expected. It is likely that the addition of a charge by small MTS reagents does not distort the conformation of the N-terminus. Therefore, the opposite effects of $MTSES^-$ and $MTSETT^+$ on T8C channel suggest that the addition of a charge itself rather than the conformational change of the N-terminus changes gating polarity and I-V relation. Furthermore, the accessibility of MTS reagents to amino acid residues at the $8^{th}$ position supports the idea that the N-terminus of gap junction channel forms or lies in the aqueous pore.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.486-490
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• 2012

$La_{7.33}Bi_2(SiO_4)_6O_2$ specimens were fabricated by standard solid-state synthesis route for solid oxide electrolytes. The calcined powders exhibited uniform particles with a mean particle size of about $28{\mu}m$. The room-temperature structure of $La_{7.33}Bi_2(SiO_4)_6O_2$ specimens was analyzed as hexagonal, space group P63 or P63/m, and the unit cell volume increased with increase a sintering temperature. The specimens sintered at $1,175^{\circ}C$ showed X-ray patterns of homogeneous apatite single phase without the second phase such as $La_2Si_2O_7$ and $La_2SiO_5$. The specimen sintered at $1,175^{\circ}C$ showed the maximum sintered density of 5.49 $g/cm^3$. Increasing the sintering temperature, total conductivities increased, activation energy decreased and the values were $1.98{\times}10^{-5}Scm-1$ and 1.23 eV, respectively.

• Korean Journal of Materials Research
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• v.33 no.8
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• pp.344-351
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• 2023

Cesium lead iodide (CsPbI₃) with a bandgap of ~1.7 eV is an attractive material for use as a wide-gap perovskite in tandem perovskite solar cells due to its single halide component, which is capable of inhibiting halide segregation. However, phase transition into a photo inactive δ-CsPbI₃ at room temperature significantly hinders performance and stability. Thus, maintaining the photo-active phase is a key challenge because it determines the reliability of the tandem device. The dimethylammonium (DMA)-facilitated CsPbI₃, widely used to fabricate CsPbI₃, exhibits different phase transition behaviors than pure CsPbI₃. Here, we experimentally investigated the phase behavior of DMA-facilitated CsPbI₃ when exposed to external factors, such as heat and moisture. In DMA-facilitated CsPbI₃ films, the phase transition involving degradation was observed to begin at a temperature of 150 ℃ and a relative humidity of 65 %, which is presumed to be related to the sublimation of DMA. Forming a closed system to inhibit the sublimation of DMA significantly improved the phase transition under the same conditions. These results indicate that management of DMA is a crucial factor in maintaining the photo-active phase and implies that when employing DMA designs are necessary to ensure phase stability in DMA-facilitated CsPbI₃ devices.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• The Korean Journal of Physiology
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• v.23 no.2
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• pp.263-275
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• 1989

Mechanical contractions and electrical activities of the fundic longitudinal and antral circular muscle fibers were investigated in order to elucidate topical differences of gastric motility. K-induced contracture was produced by exposure of muscle strips to high K Tyrode solution. Membrane potential and mechanical contraction were simultaneously recorded by conventional glass microelectrode method and single sucrose-gap technique. All experiments were performed in tris-buffered Tyrode solution which was aerated with $100%\;O_2\;and\;kept\;35^{\circ}C$. The results obtained were as follows: 1) The resting membrane potential of circular muscle cells in the antral region was about 10 mV more negative than that in the fundic region. 2) The membrane potentials decreased almost linearly as the extracellular KCI concentration was increased both in antral circular muscle cells and in fundic longitudinal muscle cells. 3) The thresholdal K concentration of K-contracture was 15 mM (membrane potential, -48 mV) for the antral circular muscle strip and 20 mM for the fundic longitudinal muscle cells. 4) The ratio of membrane permeability coefficient for $Na^+\;and\;K^+,\;P_{Na}/P_K\;({\alpha})$ was 0.065 for antral circular muscle cells and was 0.108 for fundic longitudinal muscle cells. 5) K-contracture of antral and fundic smooth muscle strips showed the contracture composed of phasic and tonic components. The amplitude of the phasic component increased sigmoidally in a dose-dependent manner, whereas that of the tonic component was maximal at a concentration of 40 mM KCI and at the concentrations above or below 40 mM KCI the amplitude was reduced. 6) The inverse relationship between the amplitude of tonic component and extracellular KCI concentration in the range of 40 to 150 mM KCI was more prominent in the antral circular muscle strip than in the fundic longitudinal muscle strip, where the amplitude of the tonic component decreased less steeply and was maintained higher at the same high K concentrations. 7) The tonic component was totally dependent on the external $Ca^{2+}$ and completely abolished by verapamil, while tile phasic component was far less dependent on the external $Ca^{2+}$ and partially suppressed by verapamil. From the above results, the following conclusions could be made. 1) The phasic component of K-contracture is produced both by intracellular $Ca^{2+}$ mobilization and by $Ca^{2+}$-influx from outside, while the tonic component is generated and maintained by the $Ca^{2+}-influx$ through the potential-dependent $Ca^{2+}$ channel. 2) The mechanism of reducing the free $Ca^{2+}$ concentration in the myoplasm seems to be more developed in the antral circular muscle than in the fundic longitudinal muscle. 3) The lower resting membrane potential of the fundic longitudinal muscle cell reflects a relatively high $P_{Na}/P_K$ ratio of about 0.108.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.1530-1530
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• 2001

The objectives of this study were to develop models to predict quality parameters of Korean bee-honeys by visible and NIR spectroscopic technique. Two kinds of bee-honey fronl acacia and polyflower sources were tested in this study. The honeys were harvested in the spring of 2000 and stored in the storage facility at 20$^{\circ}C$ during experiments. Total of 394 samples of honey were analyzed. Reflectance spectra, moisture contents, ash, invert sugar, sucrose, F/G (fructose/glucose) ratio, HMF (hydroxymethyl furfural), and C12/C13 ratio of honeys were measured. The average values for the tested honeys were 19.9% of moisture contents, 0.12% of ash, 68.4% of invert sugar, 5.7% of sucrose, 1.27 of F/G(fructose/glucose) ratio, 14.4 mg/kg of HMF, and -19.1 of C12/C13 ratio. A spectrophotometer, equipped with a single-beam scanning monochromator (NIR Systems, Model 6500, USA) and a horizontal setup module, was used to collect reflectance data from honey. The reflectance spectra were measured in wavelength ranges of 400∼2,498 nm. with 2 nm of interval. Thirty-two repetitive scans were averaged, transformed to log(1/Reflectance), and then were stored in a microcomputer file, forming one spectrum per measurement. A sample cell and reflectance plate were made to hold honey samples constantly. Spectra of honey samples were divided into a calibration set and a validation set. The calibration set was used during model development, and the validation set was used to predict quality parameters from unknown spectra. The PLS(Partial Least Square) models were developed to predict the quality parameters of honeys. The first and the second derivatives of raw spectra were also used to develop the models with proper smoothing gap. The MSC (multiplicative scatter correction) and the SNV & Dtr.(standard normal variate and detranding) preprocessing were applied to all spectra to minimize sample-to-sample light scatter differences. The PLS models showed good relationships between predicted and measured quality parameters of honeys in the wavelength range of 1100∼2200 nm. However, the PLS analysis was not good enough to predict HMF of honeys.