• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• The Journal of the Acoustical Society of Korea
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• v.22 no.7
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• pp.562-572
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• 2003

A matched-target model inversion method was developed for a passive sonar to estimate the position of moving targets. Based on the well known matched-field processing in underwater acoustics, the method finds target position by matching the measured target directions and frequencies with the corresponding values of the proposed target model. For the efficient and accurate estimations, the parameter searching was accomplished using a hybrid optimizing method, which first starts with a global optimization such as generic algorithm or simulated annealing then applies a local optimization of a simple down hill algorithm. The suggested method was testified using simulations for three different moving scenarios. The simulation results showed that the method is robust in convergence, even under the situation of over 5 times standard deviation of Gaussian distribution of measured error, and is practical in calculation time as well.

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.36-40
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• 2015

Electron cyclotron resonance (ECR) ion source is an essential component of heavy-ion accelerator. For a given design, the intensities of the highly charged ion beams extracted from the source can be increased by enlarging the physical volume of ECR zone [1]. Several models for ECR ion source were and will be constructed depending on their operating conditions [2-4]. In this paper three simulation models with 3, 4 and 6 solenoid system were built, but it's not considered anything else except the number of coils. Two groups of optimization analysis are presented, and the evolution strategy (ES) is adopted as an optimization tool which is a technique based on the ideas of mutation, adaptation and annealing [5]. In this research, the volume of ECR zone was calculated approximately, and optimized designs for ECR solenoid magnet system were presented. Firstly it is better to make the volume of ECR zone large to increase the intensity of ion beam under the specific confinement field conditions. At the same time the total volume of superconducting solenoids must be decreased to save material. By considering the volume of ECR zone and the total length of solenoids in each model with different number of coils, the 6 solenoid system represented the highest coil performance. By the way, a certain case, ECR zone volume itself can be essential than the cost. So the maximum ECR zone volume for each solenoid magnet system was calculated respectively with the same size of the plasma chamber and the total magnet space. By comparing the volume of ECR zone, the 6 solenoid system can be also made with the maximum ECR zone volume.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.449-454
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• 2002

A rectangular straight microchannel, integrated with the resistance temperature detectors(RTDs) for temperature sensing and a micro-heater for generating the Temperature gradient along the channel, was fabricated. Its dimension is 57${\mu}{\textrm}{m}$(H)$\times$200${\mu}{\textrm}{m}$(W)$\times$48,050${\mu}{\textrm}{m}$(L), and RTDs were placed at the inner-channel wall. Si wafer was used as a substrate. For the fabrication of RTDs, 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, the glass wafer was bonded with Si wafer by anodic bonding, so that the RTDs are located inside the microchannel. Temperature coefficient of resistance(TCR) values of the fabricated Pt-RTDs were 2800~2950ppm$^{\circ}C$ and the variation of TCR value In the range of O~10$0^{\circ}C$ was less than 0.3％. Therefore, it was proved that the fabricated Pt-RTDs without annealing were excellent as temperature sensors. The temperature distribution in the microchannel was investigated as a function of mass flow rate and heating power. The temperature increase rate diminished with decreasing the applied power and increasing the mass flow rate. It was confirmed from the comparison with the simulation results that the temperature measured inside the microchannel is more accurate than measuring the temperature measured at the outer wall. The proposed temperature sensing method and microchannel are expected to be useful in microfluidics researches.

• Proceedings of the Korea Water Resources Association Conference
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• 2012.05a
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• pp.464-464
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• 2012

수문분야에 있어서 빈도해석의 목적은 특정 재현기간에 대한 발생 가능한 수문량의 규모를 파악하는데 있으며, 빈도해석의 정확도는 적합한 확률분포모형의 선택과 매개변수 추정방법에 의존하게 된다. 일반적으로 각 확률분포모형의 특성을 대표하는 매개변수를 추정하기 위해서는 모멘트 방법, 확률가중 모멘트 방법, 최대우도법 등을 이용하게 된다. 모멘트 방법에 의한 매개변수 추정은 해를 구하기 위한 과정이 단순한 반면, 비대칭형의 왜곡된 분포를 갖는 자료들에 대해서는 부정확한 결과를 나타내게 된다. 확률가중 모멘트 방법은 표본의 크기가 작거나 왜곡된 자료일 경우에도 비교적 안정적인 결과를 제공하는 반면, 확률 가중치가 정수로만 제한되는 단점을 갖고 있다. 그리고 대수 우도함수를 이용하여 매개변수를 추정하게 되는 최우도법은 가장 효율적인 매개변수 추정치를 얻을 수 있는 것으로 알려져 있으나, 비선형 연립방정식으로 표현되는 해를 구하기 위해서는 Newton-Raphson 방법을 사용하는 등 절차가 복잡하며, 때로는 수렴이 되지 않아 해룰 구하지 못하는 경우가 발생되게 된다. 이에 반해, 최근의 Genetic Algorithm, Ant Colony Optimization 및 Simulated Annealing과 같은 Meta-Heuristic Algorithm들은 복잡합 공학적 최적화 문제 있어서 효율적인 대안으로 주목받고 있으며, Hassanzadeh et al.(2011)에 의해 수문학적 빈도해석을 위한 매개변수 추정에 있어서도 그 적용성이 검증된바 있다. 본 연구의 목적은 연 최대강수 자료의 빈도해석에 적용되는 확률분포모형들의 매개변수 추정을 위해 Meta-Heuristic Algorithm을 적용하고자 함에 있다. 따라서 본 연구에서는 매개변수 추정을 위한 방법으로 Genetic Algorithm 및 Harmony Search를 적용하였고, 그 결과를 최우도법에 의한 결과와 비교하였다. GEV 분포를 이용하여 Simulation Test를 수행한 결과 Genetic Algorithm을 이용하여 추정된 매개변수들은 최우도법에 의한 결과들과 비교적 유사한 분포를 나타내었으나 과도한 계산시간이 요구되는 것으로 나타났다. 하지만 Harmony Search를 이용하여 추정된 매개변수들은 최우도법에 의한 결과들과 유사한 분포를 나타내었을 뿐만 아니라 계산시간 또한 매우 짧은 것으로 나타났다. 또한 국내 74개소의 강우관측소 자료와 Gamma, Log-normal, GEV 및 Gumbel 분포를 이용한 실증연구에 있어서도 Harmony Search를 이용한 매개변수 추정은 효율적인 매개 변수 추정치를 제공하는 것으로 나타났다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.9
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• pp.1193-1201
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• 2020

Cell planning, which determines the cell structure for location management of mobile terminals in mobile communications, has been dealt with as an important research task to determine network performance. Among the factors influencing the cell structure planning in mobile communication, the signal cost for location management plays the most important role. In this paper, we propose an optimization algorithm that minimizes the location management cost of all the cells used to plan the cell structure in the network with reporting cell structure in mobile communication. The proposed algorithm uses a Tabu search algorithm, which is a meta-heuristic algorithm, and the proposed algorithm proposes a new neighborhood generation method to obtain a result close to the optimal solution. In order to evaluate the performance of the proposed algorithm, the simulation was performed in terms of location management cost and algorithm execution time. The evaluation results show that the proposed algorithm outperforms the existing genetic algorithm and simulated annealing.

• Journal of Pharmacopuncture
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• v.18 no.2
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• pp.7-18
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• 2015

Objectives: Lawsone (1,4 naphthoquinone) is a non redox cycling compound that can be catalyzed by DT diaphorase (DTD) into 1,2,4-trihydroxynaphthalene (THN), which can generate reactive oxygen species by auto oxidation. The purpose of this study was to evaluate the toxicity of the phytomarker 1,4 naphthoquinone and its metabolite THN by using the molecular docking program AutoDock 4. Methods: The 3D structure of ligands such as hydrogen peroxide ($H_2O_2$), nitric oxide synthase (NOS), catalase (CAT), glutathione (GSH), glutathione reductase (GR), glucose 6-phosphate dehydrogenase (G6PDH) and nicotinamide adenine dinucleotide phosphate hydrogen (NADPH) were drawn using hyperchem drawing tools and minimizing the energy of all pdb files with the help of hyperchem by $MM^+$ followed by a semi-empirical (PM3) method. The docking process was studied with ligand molecules to identify suitable dockings at protein binding sites through annealing and genetic simulation algorithms. The program auto dock tools (ADT) was released as an extension suite to the python molecular viewer used to prepare proteins and ligands. Grids centered on active sites were obtained with spacings of $54{\times}55{\times}56$, and a grid spacing of 0.503 was calculated. Comparisons of Global and Local Search Methods in Drug Docking were adopted to determine parameters; a maximum number of 250,000 energy evaluations, a maximum number of generations of 27,000, and mutation and crossover rates of 0.02 and 0.8 were used. The number of docking runs was set to 10. Results: Lawsone and THN can be considered to efficiently bind with NOS, CAT, GSH, GR, G6PDH and NADPH, which has been confirmed through hydrogen bond affinity with the respective amino acids. Conclusion: Naphthoquinone derivatives of lawsone, which can be metabolized into THN by a catalyst DTD, were examined. Lawsone and THN were found to be identically potent molecules for their affinities for selected proteins.

• Clean Technology
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• v.25 no.4
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• pp.316-323
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• 2019

In order to enhance combustion efficiency and reduce atmosphere pollutants, it is essential to measure carbon monoxide (CO) concentration precisely in combustion exhaust. CO is the important gas species regarding pollutant emission and incomplete combustion because it can trade off with NOx and increase rapidly when incomplete combustion occurs. In the case of a steel annealing system, CO is generated intentionally to maintain the deoxidation atmosphere. However, it is difficult to measure the CO concentration in a combustion environment in real-time, because of unsteady combustion reactions and harsh environment. Tunable Diode Laser Absorption Spectroscopy (TDLAS), which is an optical measurement method, is highly attractive for measuring the concentration of certain gas species, temperature, velocity, and pressure in a combustion environment. TDLAS has several advantages such as sensitive, non-invasive, and fast response, and in-situ measurement capability. In this study, a combustion system is designed to control the equivalence ratio. Also, the combustion exhaust gases are produced in a Liquefied Petroleum Gas (LPG)/air flame. Measurement of CO concentration according to the change of equivalence ratio is confirmed through TDLAS method and compared with the simulation based on Voigt function. In order to measure the CO concentration without interference from other combustion products, a near-infrared laser at 4300.6 cm^-1 was selected.