• Polymer(Korea)
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• v.31 no.2
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• pp.136-140
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• 2007

Charge transfer interaction as a hybridization mechanism of silsesquioxane/polymer was tested using carbazole (electron donor) group and dinitrobenzene (electron acceptor) group. Hybridization test was conducted using films made from mixing/casting of poly (carbazole-styrene) (PS/D) and dimtrobenzyl silsesquioxane (Cube/A), and transparent hybrid films were successfully obtained under some conditions. $^1H-NMR$ of PS/D and Cube/A, and W absorption test of hybrid films showed that one acceptor and one donor can form one charge transfer complex when no silsesquioxane molecule was included in films, but transparent hybrids with no phase separation were obtained only at acceptor/donor ratios less than 0.7 : 1. These results also suggested that on average 4 charge transfer complexes form per one silsesquioxane.

• Polymer(Korea)
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• v.37 no.1
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• pp.41-46
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• 2013

The glass transition temperature ($T_g$) and conversion (${\alpha}$) were measured for a diglycidyl ether of bisphenol A (DGEBA) epoxy/aromatic amine system incorporated with an organic-inorganic hybrid molecule, polyhedral oligomeric silsesquioxane (POSS). Samples isothermally cured at varying cure temperatures and times were analyzed by differential scanning calorimetry (DSC). $T_g$ vs. ln (time) data at an arbitrary reference were superposed by time-temperature shifts for the kinetically controlled reaction, and the shift factors were used to calculate an Arrhenius activation energy. Influence of POSS was investigated from $T_g$ vs. ${\alpha}$ data, which in turn were fitted with DiBenedetto equation.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.204-204
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• 2006

The interfacial interaction along with microstructure and some properties of the polyimide(PI)/silica or polyimide/silsesquioxane hybrid nanocomposites will be discussed with reviewing recent publications including our own works. Poly(vinyl silsesquioxane) (PVSSQ), aminosilane (APS), and titania can effectively play vital roles to compatibilize the PI/silica hybrid composites by enhancing interfacial interaction or reducing agglomeration of large domains, which helps the formation of nanocomposites for the PI/silica hybrid system.

• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.472-477
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• 2021

The crosslinking behavior of polyhedral oligomeric silsesquioxane (POSS) containing eight acrylate groups in a cage form in ethylene-propylene-diene rubber (EPDM) peroxide crosslinking, the effect on mechanical properties, and the thermal stability were investigated. An EPDM/POSS composite material was prepared by mixing 0 to 12 parts per hundreds of rubber (phr) of POSS per 100 phr of rubber by content and adding a peroxide crosslinking agent. As a result of crosslinking properties, it was found that the acrylate group of POSS was activated by peroxide and improved the peroxide crosslinking efficiency. Although the dispersion stability of POSS in EPDM/POSS composites was poor, the fracture strength, elongation and thermal stability were improved.

• Journal of Adhesion and Interface
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• v.11 no.1
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• pp.3-8
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• 2010

Thermal properties, flame retardant property, and sound-damping properties of polyurethane (PU) nanocomposite foams prepared with oligomeric 1,2-propanediol isobutyl polyhedral silsesquioxane (POSS) were investigated. It was found that the PU nanocomposite foams showed good sound-damping performances comparing to the PU foams without POSS.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.1-30.1
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• 2010

Hydrogen silsesquioxane (HSQ)는 spin-on glass (SOG)의 일종으로 spin-coating이 가능하며 $400^{\circ}C$ 이상의 고온에서의 어닐링을 통해 silica로 변환되는 물질이다. 이 물질은 가시광선 영역에서 95% 이상의 높은 투과도를 나타내며 산화물로의 변환 공정이 간단하며 표면 개질이 용이하기 때문에 나노 바이오, 반도체, 광전자 소자 등의 다양한 분야로의 적용이 기대되는 물질이다. 최근 나노 기술의 발전에 따라 다양한 나노 구조물을 이용하여 소자들의 효율을 향상시키는 연구가 활발하게 진행되고 있다. 따라서 HSQ를 이용하는 소자의 효율을 높이기 위해서는 쉽고 간단하면서 생산성이 높은 HSQ 나노 구조물 제작 기술에 대한 연구가 필요하다. 현재 개발된 대면적 HSQ 나노 구조물 제작 기술로는 e-beam lithography, x-ray lithography, room temperature nanoimprint lithography 등이 있다. 하지만 이와 같은 나노 패터닝 기술들은 생산성이 낮거나 공정이 복잡한 단점이 있다. 본 연구에서는 poly(dimethylsiloxane) (PDMS) mold를 이용한 직접 printing 기술을 통해 HSQ 나노 구조물을 제작하는 기술을 개발하였다. 이 기술은 대면적에 간단한 기술로 HSQ 나노 패턴을 제작할 수 있으며 master mold의 패턴이 그대로 HSQ layer로 전사되기 때문에 제작이 까다로운 아날로그 패턴도 손쉽게 제작할 수 있는 장점을 가지고 있다. 따라서 이와 같은 HSQ 직접 printing 기술을 이용하여 HSQ 아날로그 나노 패턴을 제작하고 이의 응용기술에 대한 연구를 진행하였다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1234_1235
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• 2009

The Langmuir-Blodgett (LB) method has been one of the most suitable techniques for fabricating organic thin films with well-controlled structures, compositions and thickness at the molecular level. We investigated the surface activity of dendrimer films at air-water interface by $\pi$-A isotherm. Also, we attempted to fabricate a G3-9Ph dendritic silsequioxane LB films. And their surface morphologies were observed by atomic force microscopy (AFM).

• Elastomers and Composites
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• v.50 no.1
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• pp.35-48
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• 2015

Polyhedral oligomeric silsesquioxane (POSS) is an important inorganic-organic hybrid material with a three-dimensional structure. Polyurethane (PU) is a widely applied polymer that has versatile properties with the change of two phase structure. When POSS is incorporated into PU by physical or chemical methods, many properties can be greatly improved, such as mechanical properties, thermal stability, biodegradation resistance, and water resistance. This paper reviews the recent progress in preparation, structure, and performance of POSS-modified polyurethane from the viewpoint of physical blending and chemical modification.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1293-1294
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• 2008

The Langmuir-Blodgett (LB) method has been one of the most suitable techniques for fabricating organic thin films with well-controlled structures, compositions and thickness at the molecular level. We investigated the surface activity of dendrimer films at air-water interface by ${\pi}$-A isotherm. Also, we attempted to fabricate a 1G(4,3)-chloride dendrimer LB films. And their surface morphologies were observed by atomic force microscopy (AFM).