• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.100-108
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• 1995

Heat transfer plays a critical role in determining interface location and shape in ZMR process, which is used for the fabrication of silicon - on - insulator structure. In this work, the two - dimensional pseudo - steady - state ZMR model has been developed that can simulate the heat transfer process during ZMR process. It contains the radiation, convection and conduction heat transfer and determines the interface shapes. Numerical solutions from the model include flow field in the molten zone, temperature field in the full SOl structure and the location of solid/liquid interface in the silicon thin film and silicon substrate. We examined the effects of the various system parameters on the temperature profiles and the interface shape.