• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• 대한화학회지
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• 제60권5호
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• pp.299-309
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• 2016

In this study, the physicochemical and electrochemical properties of carbon nanomaterials and synthesized nano-carbon/Si composites were studied. The nano-carbon/Si composites were ball-milled to a nano size and coated with pyrolytic carbon using Chemical Vapor Deposition (CVD). They were then finely mixed with respective nano-carbon materials. The physicochemical properties of samples were analyzed using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Raman spectroscopy, X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and surface area analyzer. The electrochemical characteristics were investigated using the galvanostatic charge-discharge and cyclic voltammetry (CV) measurements. Three-electrode cells were fabricated using the carbon nanomaterials and nano-carbon/Si composites as anode materials and LiPF₆ and LiClO₄ as electrolytes of Li secondary batteries. Reversibility using LiClO₄ as an electrolyte was superior to that of LiPF₆ as the electrolyte. The initial discharge capacities of nano-carbon/Si composites were increased compared to the initial discharge capacities of nano-carbon materials.

• 한국세라믹학회지
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• 제32권4호
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• 한국진공학회지
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• 제11권4호
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• pp.235-239
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• 2002

식각된 트랜치의 내부에 다결정 실리콘 측벽을 형성하고, 감압 화학기상 증착법(RPCVD: Reduced Pressure Chemical Vapor Deposition)을 이용해서 이를 선택적으로 성장시킴으로써 트랜치를 채우는 새로운 트랜치 격리방법을 제안하였다. 공정진행 결과, 측벽의 초기깊이와 선택적으로 성장되는 실리콘의 두께가 트랜치의 최종형태를 결정하는 가장 중요한 요소임을 확인할 수 있었다. 이 방법은 CMP 공정을 거치지 않고도 트랜치의 내부만이 실리콘으로 채워진 구조를 구현함으로써, 공정을 단순화할 뿐만 아니라 불균일 연마와 흠집발생 등 기존의 CMP 공정에서 발생할 수 있는 문제들을 방지할 수 있다는 장점을 지니고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.176-176
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• 2010

OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$조건에서 24hr 측정하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.895-898
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• 1999

We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.