• 제목/요약/키워드: Silicon modification

검색결과 107건 처리시간 0.03초

Investigation on Suppression of Nickel-Silicide Formation By Fluorocarbon Reactive Ion Etch (RIE) and Plasma-Enhanced Deposition

  • Kim, Hyun Woo;Sun, Min-Chul;Lee, Jung Han;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권1호
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    • pp.22-27
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    • 2013
  • Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

단결정 실리콘 웨이퍼의 내마모성 및 내식성 향상을 관한 연구 (Enhancement of Wear and Corrosion Resistances of Monocrystalline Silicon Wafer)

  • 우르마노프 바흐티요르;노준석;편영식;아마노프 아웨즈한
    • Tribology and Lubricants
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    • 제35권3호
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    • pp.176-182
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    • 2019
  • The primary objective of this study is to treat a monocrystalline silicon (Si) wafer having a thickness of $279{\mu}m$ by employing the ultrasonic nanocrystal surface modification (UNSM) technology for improving the efficiency and service life of nano-electromechanical systems (NEMSs) and micro-electromechanical systems (MEMSs) by enhancing of wear and corrosion resistances. The wear and corrosion resistances of the Si wafer were systematically investigated before and after UNSM treatment, wherein abrasive, oxidative and spalling wear mechanisms were applied to the as-received and subsequently UNSM-treated Si wafer. Compared to the asreceived state, the wear and corrosion resistances of the UNSM-treated Si wafer are found to be enhanced by about 23% and 14%, respectively. The enhancement in wear and corrosion resistances after UNSM treatment may be attributed to grain size refinement (confirmed by Raman spectroscopy) and modified surface integrity. Furthermore, it is observed that the Raman intensity reduced significantly after UNSM treatment, whereas neither the Raman shift nor new phases were found on the surface of the UNSM-treated Si wafer. In addition, the friction coefficient values of the as-received and UNSM-treated Si wafers are found to be about 0.54 and 0.39, respectively. Hence, UNSM technology can be effectively incorporated as an alternative mechanical surface treatment for NEMSs and MEMSs comprising Si wafers.

UNSM 기술을 이용한 초경의 기계적 특성변화 (Changes in Mechanical Properties of WC-Co by Ultrasonic Nanocrystal Surface Modification Technique)

  • 이승철;김준형;김학두;최갑수;아마노프 아웨즈한;편영식
    • Tribology and Lubricants
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    • 제31권4호
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    • pp.157-162
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    • 2015
  • In this study, an ultrasonic nanocrystalline surface modification (UNSM) technique is applied to tungsten carbide-cobalt (WC-Co) to extend the service life of carbide parts used in press mold. The UNSM technique modifies the structure, reduces the surface roughness, increases the surface hardness, induces the compressive residual stress, and increases the wear resistance of materials by introducing severe plastic deformation. The surface roughness, hardness, and compressive residual stress of WC after UNSM treatment improve by about 42, 10, and 71%, respectively. A wear test under dry conditions is used to assess the effectiveness of the UNSM technique on the friction and wear behavior of WC. The UNSM technique is found to reduce the WC friction coefficient by approximately 21% and enhance the wear resistance by approximately 85%. The improved friction and wear behavior of WC may be mainly attributed to the increased hardness and compressive residual stress. Moreover, the WC specimen is treated by UNSM technique using three different WC, silicon nitride (Si3N4) and stainless steel (STS304) balls. The surface treated by WC balls shows the highest hardness when compared with treatment by stainless steel and silicon nitride balls. According to the obtained results, the UNSM technique is believed to increase the durability of the carbide component by improving the friction and wear behavior.

피부 섬유아세포에서 비타민 C, Silicon, 철분 처리가 콜라겐 합성 및 분해 관련 효소의 발현에 미치는 효과 비교 (Effect of Vitamin C, Silicon and Iron on Collagen Synthesis and Break-Down Enzyme Expression in the Human Dermal Fibroblast Cell (HS27))

  • 김정은;이진아;김현애;김정민;조윤희
    • Journal of Nutrition and Health
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    • 제42권6호
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    • pp.505-515
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    • 2009
  • 본 연구에서는 비타민 C, silicon, 철분을 농도별로 피부섬유아 세포에 처리 후 콜라겐 합성 효소인 PH, LH의 mRNA와 protein 발현 및 분해 효소인 MMP-1와 저해제인 TIMP-1의 mRNA, protein 발현의 변화를 대조군과 비교 분석하였으며 그 결과를 요약하면 다음과 같다. 1) 피부 섬유아세포에서 비타민 C의 처리는 콜라겐 합성 효소인 PH의 mRNA 발현을 대조군에 비해 현저하게 증가시켰고 이와 병행하여, PH의 protein 발현도 대조군에 비해 유의적으로 증가하였다. 그러나 다른 콜라겐 합성 효소인 LH의 mRNA 발현에는 영향을 미치지 않았으나 protein의 발현을 증가시켰다. 또한, 콜라겐 분해 효소인 MMP-1의 mRNA 발현은 대조군에 비해 유의적으로 증가시켰으나 protein 발현에서는 대조군과 차이가 없었다. 2) 피부 섬유아세포에서 silicon의 혈중 내 농도 처리는 LH의 mRNA 발현의 현저한 증가와 더불어 protein 발현에도 긍정적인 영향을 미치는 것으로 나타났다. 콜라겐 분해 효소인 MMP-1과 저해제인 TIMP-1의 단백질 발현을 대조군에 비해 증가시켰다. 3) 피부 섬유아세포에서 철분의 혈중 내 농도 처리는 콜라겐 합성 및 분해 관련 효소의 mRNA 및 protein 발현에 영향을 미치지 않았다. 결론적으로, 피부섬유아세포에서 비타민 C 및 silicon의 처리는 콜라겐의 posttranslational modification 관련 효소의 mRNA의 발현 및 단백질의 발현을 증가시켜 궁극적으로 콜라겐 합성에 긍정적인 영향을 나타내었다.

열화학기상증착법에 의한 고순도 탄소나노튜브의 성장 (Growth of Highly Purified Carbon Nanotubes by Thermal Chemical Vapor Deposition)

  • 유재근;박정훈;김대운;이철진;손권희;신동혁;문인기
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권12호
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    • pp.649-653
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    • 2000
  • We have grown carbon nanotubes by thermal chemical vapor deposition of $C_{2}H_{2}$ on catalytic metal deposited on silicon oxide substrates. Highly purified carbon nanotubes are uniformly grown on a large area of the silicon oxide substrates. It is observed that surface modification of catalytic metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_{3}$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_{2}H_{2}$ gas. The diameters of carbon naotubes could be controlled by applying the different catalytic metals.

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Theoretical study on the dissociation reactions of C4F6 molecules

  • 최희철;박영춘;이윤섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.36-36
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    • 2010
  • Low-pressure fluorocarbon plasmas are widely used in microelectronics fabrication for a variety of surface modification purposes. In particular, fluorocarbon plasmas are used for the etching of dielectrics such as silicon dioxide and silicon nitride. Among the various fluorocarbons, this study focuses on C4F6 molecules (C4F6s) which are composed of hexafluorocyclobutene (c-C4F6), hexafluoro-1, 3-butadiene (1, 3-C4F6), and hexafluoro-2-butyne (2-C4F6). We have investigated the dissociation reactions of C4F6s, resulting in CF2, CF3, C2F3, and C3F3 fragments, by using the wB97X-D functional with various basis sets. In this presentation, the geometrical properties, energetics, and dissociation mechanisms of C4F6s will be suggested.

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아공정 Al-Si합금에 있어서 공정 Si크기에 미치는 전자기진동의 영향 (The Effect of Electromagnetic Vibration on Eutectic Si Size in Hypoeutectic Al-Si alloys)

  • 최정평;윤의박;남태운
    • 한국주조공학회지
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    • 제24권2호
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    • pp.79-84
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    • 2004
  • In this study, the electromagnetic vibration is adopted for modifying eutectic Si phase and reducing its size. The higher the current density and frequency of electromagnetic vibration(EMV), the finer the size of eutectic Si phase. The tensile strength and elongation of EMVed alloy were highly improved. Measured twin probability of EMVed alloy at a frequency of 1000 Hz was approximately six times as high as that of the normal alloy. The mechanism for the increase in twin density due to EMV during solidification could be supposed from the fact that the preferential growth along <112> in silicon was suppressed by preventing Si atom from attaching to the growing interface of Si phase and by changing the solid/liquid interfacial energy of silicon. According to the result of UTS test, because of modification of eutectic Si, UTS and elongation are highly increased.

Anti-Reflection Properties of In-Situ Doped Spin-On Film

  • U. Gangopadhyay;Kim, Kyung-Hae;Park, J.H.;S.K. Dhungel;D. Mangalaraj;J. Yi;H. Saha;Kim, D.W.
    • Transactions on Electrical and Electronic Materials
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    • 제4권6호
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    • pp.1-4
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    • 2003
  • Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.

SCANNING PROBE NANOPROCESSING

  • Sugimura, Hiroyuki;Nakagiri, Nobuyuki
    • 한국표면공학회지
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    • 제29권5호
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    • pp.314-324
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    • 1996
  • Scanning probe microscopes (SPMs) such as the scanning tunneling microscope (STM) and the atomic force microscope (AFM) were used for surface modification tools at the nanometer scale. Material surfaces, i. e., titanium, hydrogen-terminated silicon and trimethylsilyl organosilane monolayer on silicon, were locally oxidized with the best lateral spatial resolution of 20nm. The principle behind this proximal probe oxidation method is scanning probe anodization, that is, the SPM tip-sample junction connected through a water column acting as a minute electrochemical cell. An SPM-nanolithogrphy process was demonstrated using the organosilane monolayer as a resist. Area-selective chemical modifications, i. e., etching, electroless plating with gold, monolayer deposition and immobilization of latex nanoparticles; were achieved in nano-scale resolution. The area-selectivity was based on the differences in chemical properties between the SPM-modified and unmodified regions.

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