• Title/Summary/Keyword: Silicon ingot

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Evaluation of silicon powder waste quality by electromagnetic induction melting and resistance test (단결정 잉곳의 표면 그라인딩에서 발생하는 고순도 실리콘 분말 폐기물의 용해 및 품질 평가)

  • Moon, Byung Moon;Kim, Gangjune;Koo, Hyun Jin;Shin, Je Sik
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.187.2-187.2
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    • 2011
  • 태양광산업의 value chain중 up-stream쪽인 고순도 실리콘산업은 셀, 모듈, 시스템 쪽에 비하여 영업 이익률이나 부가가치 측면에서 매우 높은 성장성을 현재 보여주고 있으며 최근 원자력산업의 안전성 문제가 대두됨으로 인하여 태양광수요가 전 세계적으로 증대되는 경향을 나타내어 태양광용 실리콘의 수요가 확대됨과 아울러 spot시장에서의 가격 또한 상승하고 있다. 이런 관점에서 잉곳 및 웨이퍼 가공 중에 발생하는 고순도 실리콘 폐기물의 재활용 이 다시 주목받고 있다. 태양전지 웨이퍼(wafer)용 소재는 6N급 이상의 결정질 실리콘 잉곳(ingot)이 주를 이루며, 고효율의 셀을 제조하기 위해서 단결정 실리콘 잉곳이 많이 사용된다. 실리콘 단결정을 육성하는 방법에는 Floating zone 법, Czochralski 법, Bridgeman 법, CVD 등 매우 다양하다. 이 중 Czochralski 법은 전체 생산량의 대부분을 차지하고 있는 방법으로, 용융액에서 결정을 인상하여 ingot을 제작하는 방법이다. 그러나 대량의 전기에너지를 소비하여 제작되는 고순도의 실리콘 단결정 잉곳은 후 가공공정에서 그 절반 이상이 분말(powder) 및 슬러지(sludge)로 폐기되므로, 자원의 재활용 및 환경오염 측면에서 주요과제가 되고 있다. Czochralski 법으로 제작된 ingot의 경우 그 표면이 매끄럽지 못하여, 웨이퍼 단위의 가공 시 형태가 진원이 될 수 있도록 표면을 미리 연마(grinding)하는데, 이때에도 미세 분말이 다량 발생하게 된다. 본 연구에서는 이러한 고순도 단결정 실리콘 ingot의 연마 가공공정에서 발생한 미세 분말을 용해하여 보았다. 진공 챔버(chamber) 내부에 유도가열 코일과 냉도가니로 구성된 장비를 통해 전자기유도가열을 이용하여 실리콘 분말 폐기물을 용해하고, 그 시편을 ICP-MS 및 비저항 측정을 통해 분말 의 특성을 조사하여 재활용 가능성을 검토해 보았다.

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Analysis of Aluminum Back Surface Field on Different Wafer Specification

  • Park, Seong-Eun;Bae, Su-Hyeon;Kim, Seong-Tak;Kim, Chan-Seok;Kim, Yeong-Do;Tak, Seong-Ju;Kim, Dong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.216-216
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    • 2012
  • The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

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Magnetic properties of high silicon steel processed by powder metallurgy (분말야금 공정에 의한 고규소강의 자성특성)

  • Yim, Tai-Hong;Chung, Hyung-Sik;Kang, Won-Koo;Chung, Young-Ho
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.231-235
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    • 1990
  • Soft magnetic silicon steels containing up to 6.5wt% of silicon were prepared by powder metallurgical processing and their magnetic properties were evaluated. The magnetic properties of P/M silicon steels are similarly affected by the silicon addition as those of conventional ingot processed ones but are also significantly affected by density and interstitial impurities particularly oxygen content. Magnetic flux density, $B_{10}$ and coercivity, Hc, tends to decrease with silicon content whereas maximum permeability, ${\mu}m$, decreases first and then increases rapidly above 5 wt% silicon. Increasing density also increases magnetic flux density and maximum permeability but reduces coereivity. The latter two properties are, however, affected more strongly with oxygen content.

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Development of Cleaning Agents for Solar Silicon Wafer (태양광 실리콘 웨이퍼 세정제 개발)

  • Bae, Soo-Jeong;Lee, Ho-Yeoul;Lee, Jong-Gi;Bae, Jae-Heum;Lee, Dong-Gi
    • Clean Technology
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    • v.18 no.1
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    • pp.43-50
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    • 2012
  • Cleaning procedure of solar silicon wafer, following ingot sawing process in solar cell production is studied. Types of solar silicon wafer can be divided into monocrystalline or multicrystalline, and slurry sawn wafer or diamond sawn wafer according to the ingot growing methods and the sawing methods, respectively. Wafer surface and contaminants can vary with these methods. The characterisitics of contaminants and wafer surface are investigated for each cleaning substrate, and appropriate cleaning agents are developed. Physical properties and cleaning ability of the cleaning agents are evaluated in order to verify the application in the industry. The wafers cleaned with the cleaning agents do not show any residual contaminants when analyzed by XPS and regular patterns are formed after texturization. Furthermore, the cleaning agents are applied in the production industry, which shows superior cleaning results compared to the existing cleaning agents.

Heat and Fluid Flow Analysis on the Effect of Crucible Heat Conductivity and Flow Rate of Ar to Solidification of Polycrystalline Silicon Ingot (다결정 Si ingot 응고 시 도가니 열전도도 및 Ar 유입량 변화에 대한 열유체 해석)

  • Shin, Sang-Yun;Ye, Byung-Joon
    • Journal of Korea Foundry Society
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    • v.32 no.6
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    • pp.276-283
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    • 2012
  • This study presents the results on the changes of crucible thermal conductivity and inflow of Ar, and constructed the mathematical model about heat transfer into furnace. As process variables, simulation model was designated thermal conductivity of crucible to $0.5W{\cdot}m^{-1}{\cdot}K^{-1}$, $1W{\cdot}m^{-1}{\cdot}K^{-1}$, $2W{\cdot}m^{-1}{\cdot}K^{-1}$, $4W{\cdot}m^{-1}{\cdot}K^{-1}$, and inflow rate of Ar to 15 L/min, 30 L/min, 60 L/min. Initial condition and boundary condition were set respectively in two terms of process. Each initial conditions were set up by the preceding simulation of heat and fluid flow. The primary goal is the application of unidirectional growth of Si ingot using the result. In the result of the change of heat conductivity of crucible, the higher thermal conductivity of crucible shows the shorter solidification time and the bigger temperature difference. And the flow patterns are changed with the inflow rate of Ar. Finally, we found that the lower crucible's thermal conductivity, the better crucible is at polycrystalline Si ingot growth. But in case of Ar inflow, it is hard to say about good condition. This data will be evaluated as useful reference used in allied study or process variable control of production facilities.

A Study on Cutting Force during Multi Wire Sawing of Silicon Wafers for Solar Cells (태양전지용 실리콘 웨이퍼의 멀티 와이어 쏘잉 시 절삭저항력에 관한 연구)

  • Hwang, In-Hwan;Park, Sang-Hyun;An, Kuk-Jin;Kwun, Geon-Dae;Lee, Chan-Jong
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.15 no.3
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    • pp.66-71
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    • 2016
  • Reducing the wafer breakage rate and sawing thinner wafers will decrease the cost of solar cells. This study was carried out in order to identify ways to achieve this goal. In this study, the cutting force characteristics using an ingot tilting-type diamond multi wire-sawing machine were analyzed. The cutting force was analyzed while varying the tilting angles and wire speed. The obtained data were analyzed by classifying the tangential cutting force and the normal cutting force. In this cutting force experiment, the difference between the forces was confirmed; it was found that it rises with increasing the tilting angles and decreases when the wire speed elevates. The resulting value can be utilized as basic data for the determination of an ideal cutting recipe.

Study on Recycling of Scraps from Process of Silicon-single-crystal for Semiconductor

  • Lee, Sang-Hoon;Lee, Kwan-Hee;Hiroshi Okamoto
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.705-710
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    • 2001
  • So for the quartz-glassy crucible wastes which was used for pulling up silicon-single-crystal ingot have simply reused for refractory raw-materials, or exhausted. This study is concerned on the advanced recycling-technology that is obtained by the proper micro-particle preparation process in order to fabricate fine amorphous silica filler for EMC (Epoxy Molding Compound). Therefore, this paper will deal with the physical, chemical and thermal pre-treatment process for efficient impurity removal and with the proper micro-particle process for producing the amorphous silicafiller. In view of the results, if the chemical, physical and thermal pre-treatment process for efficient elimination of impurity was passed, the purity of wasted fused glassy crucible is almost equal to the its of first anhydrous quartz glass. Thus, it was understood that this wasted fused glassy crucible was sufficient value of recycling, though it was damaged. When the ingot was fabricated, Phase transformation of crystallization by heat treatment (heat hysteresis phenomenon) was not changed. So, it was understood that as fused silica in the amorphous state, as It is, recycling possibility was very high

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Effect Boron and Silicon on Various Properties of Dental Cobalt-Chromium Alloys (치과용 Co-Cr 합금의 제성질에 미치는 Boron과 Silicon의 영향)

  • Jung, Jong-Hyun
    • Journal of Technologic Dentistry
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    • v.14 no.1
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    • pp.119-132
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    • 1992
  • This paper aims to investigate the effect of B and Si upon the mechanical properties, microstructure and corrosion resistance of Co-Cr base alloy. Ten groups of alloy ingot ingot with various contents of B and Si were remelted by high frequency electrical induction furnace and cast into tensile specimen of ADA Specification No. 14 Tensile and hardness test were carried out by Amsler and Rockwell hardness tester(R-30N), respectively. The microstructures of specimen were observed by SEM. The results obtained are summarized as follows : 1. As B content is increased, tensile strength, yield strength and Rockwell hardness number(R-30N) are also increased significantly, while the elongation is decreased significantly. 2. As Si contect os increased, no significant chang in tensile strength is noticed, yield strength is slightly decreased, but Rockwell hardness number(R-30N) is moderately in creased, Elongation marks maxium value with 1% Si content while with more than 1% Si it is decreased. 3. As B content is increased corrosion resistance is decreased and is at best with 1.5% B content. Corrosion resistance is increased with the increase of Si content and the alloys with Si over 3.0% showed corrosion resistance. 4. As B content increased, precipitates are increased in number at grain boundaries. The grain size tends to become coarse with the increase of Si content. 5. Co rich-Cr alloy is present through matrix whereas at the grain boundaries Cr base precipitates are primarily formed.

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