• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.57-63
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• 2016

This paper describes implementation of the RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4g SUN sensor node transceiver modules. Design of the each module like VCO, prescaler, 1/N divider, ${\Delta}-{\Sigma}$ modulator, and common circuits of the PLL has been optimized to obtain high speed and low noise performance. Especially, the VCO has been designed with NP core structure and 13 steps cap-bank to get high speed, low noise, and wide band tuning range. The output frequencies of the implemented synthesizer is 1483MHz~2017MHz, the phase noise of the synthesizer is -98.63dBc/Hz at 100KHz offset and -122.05dBc/Hz at 1MHz offset.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.1-5
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• 2003

In this project, the efficiency of localized heating for micro systems packaging is developed by using a forced potential scheme microheater. Less than 0.2 Mpa contact pressure was used for bonding with a 200 mA current input for $50{\mu}m$ width, $2{\mu}m$ height and $8mm{\times}8mm$, $5mm{\times}5mm$, $3mm{\times}3mm$ sized phosphorus-doped poly-silicon microheater. The temperature can be raised at the bonding region to $800^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3 minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional microheaters. For performing the gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for conducting a gross leak check. The pass ratio of bonded dies was 67%, for conventional localized heating, and 85% for our newly developed FP scheme. The bonding strength was more than 25Mpa for FP scheme packaging, which shows that FP scheme can be a good candidate for micro-scale hermetic packaging.