• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.39-43
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• 2012

This paper presents a study on the design of a pulling module for silicon ingot and an apparatus of manufacturing silicon single crystal ingot using the same method. The pulling module is conceptually designed by using TRIZ. Czochralski method(CZ) is representative way to manufacture single crystal ingot for wafers. The seed can be broken by high tension which is caused by large weight of a silicon ingot. The solution of this problem has been derived using 6SC(6 steps creativity)TRIZ. The pulling module is actuated by DC motor and rollers. High tension in the seed is removed by the rotate-elevate motion of rollers in the pulling module. A rubber belt is included in the rotate-elevate mechanism for increasing friction between rollers and silicon ingot.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.190-195
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• 2014

Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.907-911
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• 2012

High purity silicon can be obtained from Al-Si alloys by a combination of solvent refining and centrifugation. Silicon purification by crystallization of silicon from an Al-Si alloy melt was carried out using 2N and 4N purity aluminum and 2N purity silicon as raw materials. The effect of the purity of raw materials on the final silicon ingot purity by centrifugation was investigated for an Al-50 wt% Si alloy. Alloys were melted using an electrical resistance furnace, and then poured into a centrifuging apparatus. A silicon lump like foam was obtained after centrifugation and was leached by an acid in order to get pure silicon flakes. Then silicon flakes were melted to make a silicon ingot using an induction furnace. The purities of the silicon flakes and silicon ingot were enhanced significantly compared to those of the raw materials of silicon and aluminum. The silicon ingot made of 4N aluminum and 2N silicon showed the lowest impurities.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.11
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• pp.33-41
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• 2014

This paper is research result for a development of sapphire silicon ingot glowing(SSIG) PWM converter system for 80kW 10kA. The system include 3-phase AC-DC diode rectifier of input voltage AC 380V and 60Hz, DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 8.0V and large current 10,000A of output specification, tungsten resistor load 0.1[$m{\Omega}$]. PWM switching frequency for IGBT inverter control set 30kHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SSIG system. This paper propose

• Current Photovoltaic Research
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• v.6 no.2
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• pp.49-55
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• 2018

Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.675-680
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• 2006

The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.

• Nuclear Engineering and Technology
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• v.38 no.1
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• pp.93-98
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• 2006

The radial uniformity of neutron irradiation in silicon ingots for neutron transmutation doping (NTD) at HANARO is examined by both calculations and measurements. HANARO has two NTD holes named NTD1 and NTD2. We have been using the NTD2 hole for 5 in. NTD commercial service, and we intend to use two holes for 6 in. NTD. The objective of this study is to predict the radial uniformity of 6 in. NTD at the two holes. The radial neutron flux distributions inside single crystal and noncrystal silicon loaded at the NTD2 hole are calculated by the VENTURE code. For NTD1, the radial distributions of the reaction rate for a 6 in. NTD with a neutron screen are calculated by MCNP, and measured by gold wire activation. The results of the measurements are compared with those of the calculations. From the VENTURE calculation, it is confirmed that the neutron flux distribution in the single crystal silicon is much flatter than that in the non-crystal silicon. The non-uniformities of the measurements for radial neutron irradiation are slightly larger than those of the calculations. However, excluding local dips in the measurements, the overall trends of the distributions are similar. The radial resistivity gradient (RRG) for a 5 in. silicon ingot is estimated to be about $1.5\%$. For a 6 in. ingot, the RRG of a silicon ingot irradiated at HANARO is predicted to be about $2.1\%$. Also, from the experimental results, we expect that the RRG would not be larger than $4.4\%$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.101-105
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• 2010

Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.