• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2003년도 추계학술대회논문집
• /
• pp.76-79
• /
• 2003

Glass molding is an advantageous method to manufacture glass micro optical components. However, it is difficult to make tungsten carbide core for glass molded micro optics way. We have developed novel method to fabricate tungsten carbide core for glass molding of glass micro optical components. Silicon masters were fabricated by micro machining. Tungsten Carbide cores were fabricated by forming, sintering and coating. Finally we fabricated glass molded V-groove with pitch of 192$\mu\textrm{m}$ and glass microlens way with lens diameter of 36∼225$\mu\textrm{m}$ by the present method.

• Transactions on Electrical and Electronic Materials
• /
• 제15권6호
• /
• pp.344-347
• /
• 2014

This study was carried out on DLC thin film deposition technology used in infrared optical system production as a method of reducing the shape changes of the molding core and the consequent loss of life. Experiments on the deposition on silicon wafer and tungsten carbide used as a substrate for molding core were conducted at each processing condition using a filtered arc system, and it was found that the surface and mechanical properties were of the greatest quality when the substrate bias voltage of -150 V was used. In addition, it was confirmed that the PV and Ra characteristics were improved by the deposition of the DLC thin film.

• 한국광학회지
• /
• 제33권2호
• /
• pp.74-83
• /
• 2022

위성 관측 카메라용 대구경 초경량 반사광학계를 제작하기 위해 소재 개발부터 최종 시스템 인증시험까지 전 과정을 수행했다. 완성된 비점보정 3반사경 구조의 위성용 반사광학계 망원경은 주반사경의 구경이 700 mm이고, 망원경 전체 질량은 66 kg이다. 광학소재 및 구조물에 적용하기 위한 반응소결법을 개발했고, 이 방법을 이용해서 실리콘 카바이드(silicon carbide, SiC) 재질의 광학 몸체를 제작하고 소결체의 화학특성, 표면특성, 결정구조를 확인했다. 광학 몸체의 기계적, 화학적 성질을 고려한 연마와 코팅 방법을 개발했으며 화학기상증착법을 적용해 SiC 경면 표면 위에 치밀한 SiC 박막을 170 ㎛ 이상 증착함으로써 광학 성능이 우수한 경면을 만들 수 있었다. 반사경 제작 후 반사경과 지지 구조를 조립하고 정렬해서 다양한 광학 시계에 대해 파면 오차를 측정했다. 아울러 우주 환경 및 발사환경에 대한 우주 인증에 맞추어 구성품 및 최종 조립체를 온도와 진동에 대한 환경시험을 실시하여 설계 목표 성능을 달성했음을 확인했다.

• 한국세라믹학회지
• /
• 제33권12호
• /
• pp.1380-1386
• /
• 1996

The effects of urea addition and reaction conditions were examined in the prepareation of zirconia coated SiC whiskers through surface precipitation taking place during high-temperature aging of Zr(SO4)2 solutions containing the whiskers. More dense zirconia-hydrate was precipitated on the surfaces of the whiskers in the presence of urea. The ratio of the concentration of Zr(SO4)2 to the amount of added whiskers was the most important factor to confine the precipitation of zirconia-hydrate only at the surfaces of the whiskers The from of the coating layers was unchanged after heat-treatment leading to the dehydration and crystallization of the layers.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 2004년도 추계학술발표회 발표논문집
• /
• pp.1059-1060
• /
• 2004

• 한국세라믹학회지
• /
• 제51권5호
• /
• pp.481-486
• /
• 2014

Environmental barrier coatings (EBCs) are used to protect SiC-based ceramics or composites from oxidation and corrosion due to reaction with oxygen and water vapour at high temperatures above $1000^{\circ}C$. Mullite ceramics have been studied for environmental barrier coatings for Si-based ceramics. More recently, rare earth silicate ceramics have been identified as more water vapour-resistant materials than mullite for environmental barrier coatings. In this study, we fabricate mullite and yttrium silicate ceramics by an atmospheric plasma spray coating method using spherical granules fabricated by spray drying. As a result, EBCs with thicknesses in the range of $200-300{\mu}m$ are successfully fabricated without any macroscopic cracks or interfacial delamination. Phase and microstructure analysis are conducted, and the basic mechanical properties, such as hardness and indentation load-displacement curves are evaluated.

• Korean Chemical Engineering Research
• /
• 제61권1호
• /
• pp.32-38
• /
• 2023

본 연구에서는 리튬 이온 배터리 용 음극활물질인 실리콘의 사이클 안정성 및 율속 특성을 개선하기 위해 도파민이 코팅된 실리콘/실리콘카바이드/카본(Si/SiC/C) 복합소재의 전기화학적 특성을 조사하였다. Stöber 법에 CTAB을 추가하여 CTAB/SiO₂를 합성한 후 열 흡수제로써 NaCl을 첨가한 마그네슘 열 환원법을 통해 Si/SiC 복합소재를 제조하였으며, 도파민의 중합반응을 통해 탄소코팅을 하여 Si/SiC/C 음극소재를 합성하였다. 제조된 Si/SiC/C 음극소재의 물리적 특성 분석을 위해 SEM, TEM, XRD와 BET를 사용하였으며, 1 M LiPF₆ (EC : DEC = 1 : 1 vol%) 전해액에서 리튬 이온 배터리의 사이클 안정성, 율속 특성, 순환전압전류 및 임피던스 테스트를 통해 전기화학적 특성을 조사하였다. 제조된 1-Si/SiC는 100사이클, 0.1 C에서 633 mAh/g의 방전용량을 나타냈으며, 도파민이 코팅된 1-Si/SiC/C는 877 mAh/g으로 사이클 안정성이 향상된 것을 확인할 수 있었다. 또한 5C에서 576 mAh/g의 높은 용량과 0.1 C/0.1 C 일 때 99.9%의 용량 회복 성능을 나타내었다.

• Nuclear Engineering and Technology
• /
• 제47권5호
• /
• pp.608-616
• /
• 2015

The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.

• Carbon letters
• /
• 제2권1호
• /
• pp.27-36
• /
• 2001

The pack-cementation process is the method which is formed SiC coating layer to improve weak oxidation properties of CFRCs (carbon fiber-reinforced carbons). This method develops the anti-oxidation coating layer having no dimensional changes and good wetting properties. In this study to improve the oxidative resistance of the prepared 4D CFRCs, the surface of CFRCs is coated by SiC using pack cementation method. The mechanical properties of SiC-coated 4D CFRCs are measured by the 3-point bending test, and their ablation properties are investigated by the arc torch plasma test. From the results, it is found that both mechanical and ablation properties of SiC-coated 4D CFRCs are much better than bare CFRCs.

• 한국세라믹학회지
• /
• 제44권8호
• /
• pp.445-450
• /
• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.